IP Library › Granted Patent US 12,391,543
Granted Patent B1
US 12,391,543 · App. 18/402,483 · Granted Aug 19, 2025

Resonant elements and oscillators

Inventors: Renata M. Berger (Palo Alto, CA); Ginel C. Hill (Sunnyvale, CA); Paul M. Hagelin (Saratoga, CA); Charles I. Grosjean (Los Gatos, CA); Aaron Partridge (Cupertino, CA); Joseph C. Doll (Mountain View, CA); Markus Lutz (Mountain View, CA)
Assignee: SiTime Corporation
B81B3/0024H03H9/02448H03H9/2457H03H9/2405
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Quick Facts
Patent No.
US 12,391,543
App. No.
18/402,483
Granted
Aug 19, 2025
Kind
B1
Abstract

The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 10 19 cm −3 , and preferably between 10 19 cm −3 and 10 21 cm −3 .

Claims (63)

1. A micromachined resonator comprising:

first, second, third and fourth beams, each of the beams comprising at least one layer of crystal silicon having an impurity dopant having concentration which is greater than or equal to 10 19 cm −3 , each of the beams an anchored end and a swinging end;

at least one connecting structure that mechanically couples together the anchored ends of the beams;

at least one electrode to sense a frequency of resonant motion of the micromachined resonator; and

wherein

the micromachined resonator has a first axis,

the swinging end of the first beam and the swinging end of the second beam are arranged symmetrically about the first axis, and are configured to simultaneously deflect under the application of electrical stimuli, in a common direction along a second axis perpendicular to the first axis,

the swinging end of the third beam and the swinging end of the fourth beam are also arranged symmetrically about the first axis, and are also configured to simultaneously deflect under the application of the electrical stimuli, in a common direction along the second axis,

the swinging end of the first beam and the swinging end of the third beam are configured to simultaneously deflect under the application of the electrical stimuli in opposite directions along the second axis,

the swinging end of the second beam and the swinging end of the fourth beam are configured to simultaneously deflect under the application of the electrical stimuli in opposite directions along the second axis,

the at least one layer of crystal silicon has a silicon crystal axis;

the micromachined resonator is oriented, relative to the silicon crystal axis, such that a first two of the first beam, the second beam, the third beam and the fourth beam are oriented at respective, reciprocal angles about the silicon crystal axis and such that a second two of the first beam, the second beam, the third beam and the fourth beam are oriented at respective, reciprocal angles about the silicon crystal axis;

the first two and the second two are oriented at one or more angles relative to each other, such that a contribution of a temperature coefficient of frequency (TCF) of the micromachined resonator from the first two is substantially negated by a contribution to the TCF from the second two; and

the sensed frequency of resonant motion is dependent on motion of the four beams.

2. The micromachined resonator of claim 1 wherein the impurity dopant is one of phosphorus, arsenic, bismuth or antimony.

3. The micromachined resonator of claim 1 wherein the concentration of impurity dopant is non-uniform within each of the four beams along at least one dimensional axis.

4. The micromachined resonator of claim 3 wherein the at least one dimensional axis comprises a length dimension of the respective beam.

5. The micromachined resonator of claim 1 wherein the impurity dopant is phosphorus.

6. The micromachined resonator of claim 1 , embodied as a multi-die package, the multi-die package comprising a circuits die and a MEMS die, the micromachined resonator being carried by the MEMS die, the MEMS die being flip-chip mounted to the circuits die.

7. A device comprising:

a first die, having a micromachined resonator and at least one electrode to sense a frequency of resonant motion of the micromachined resonator, wherein the micromachined resonator comprises first, second, third and fourth beams, each of the beams comprising at least one layer of crystal silicon having an impurity dopant having concentration which is greater than or equal to 10 19 cm −3 , each of the beams an anchored end and a swinging end, and at least one connecting structure that mechanically couples together the anchored ends of the beams; and

a second die having electronic circuitry that is structured so as to, during operation of the integrated circuit package, excite the micromachined resonator to vibrating motion and to generate, from a signal provided by the at least one electrode, a timing signal;

wherein

the micromachined resonator has a first axis,

the swinging end of the first beam and the swinging end of the second beam are arranged symmetrically about the first axis, and are configured to simultaneously deflect under the application of electrical stimuli, in a common direction along a second axis perpendicular to the first axis,

the swinging end of the third beam and the swinging end of the fourth beam are also arranged symmetrically about the first axis, and are also configured to simultaneously deflect under the application of the electrical stimuli, in a common direction along the second axis,

the swinging end of the first beam and the swinging end of the third beam are configured to simultaneously deflect under the application of the electrical stimuli in opposite directions along the second axis,

the swinging end of the second beam and the swinging end of the fourth beam are configured to simultaneously deflect under the application of the electrical stimuli in opposite directions along the second axis,

the at least one layer of crystal silicon has a silicon crystal axis,

the micromachined resonator is oriented, relative to the silicon crystal axis, such that a first two of the first beam, the second beam, the third beam and the fourth beam are oriented at respective, reciprocal angles about the silicon crystal axis and such that a second two of the first beam, the second beam, the third beam and the fourth beam are oriented at respective, reciprocal angles about the silicon crystal axis,

the first two and the second two are oriented at one or more angles relative to each other, such that a contribution of a temperature coefficient of frequency (TCF) of the micromachined resonator from the first two is substantially negated by a contribution to the TCF from the second two, and

the sensed frequency of resonant motion is dependent on motion of the four beams.

8. The device of claim 7 wherein the impurity dopant is one of phosphorus, arsenic, bismuth or antimony.

9. The device of claim 7 further comprising at least one encapsulant, wherein the at least one encapsulant is configured such that the first die is completely encapsulated relative to an ambient environment external to the device.

10. The device of claim 7 wherein the micromachined resonator is formed from a silicon wafer in a manner such that the micromachined resonator is anchored at an anchor point and wherein two beams, of the first, second, third and fourth beams, are mirrored versions of one another about at least one axis which passes through the anchor point.

11. The device of claim 10 wherein each beam of the two beams is a mirrored version of a first other one of the first, second, third and fourth beams about a first axis of the at least one axis, and is also a mirrored version of a second other one of the first, second, third and fourth beams about a second axis of the at least one axis.

12. The device of claim 7 wherein:

a constituent material of the micromachined resonator has a temperature-dependent vibration characteristic; and

the electronic circuitry comprises active compensation circuitry that is to generate the timing signal dependent on the vibration of the micromachined resonator in a manner such that the timing signal has a temperature-invariant frequency.

13. The device of claim 12 wherein the electronic circuitry is to generate a bias voltage in a manner that varies with temperature, wherein the first die is coupled to the second die to receive the bias voltage and wherein the first die is configured to apply the bias voltage to the micromachined resonator to correct the temperature-dependent vibration characteristic.

14. The device of claim 12 wherein the first die is coupled to the second die to provide to the second die a resonator signal, from the at least one electrode, the resonator signal having a temperature-dependent frequency that varies in dependence on the temperature-dependent vibration characteristic, and wherein the electronic circuitry comprises frequency synthesis circuitry which is configured to electronically generate the timing signal from the resonator signal, in a manner such that the timing signal has a temperature-invariant frequency.

15. The device of claim 14 wherein the device is further characterized by external electrical contacts and wherein the device is configured so as to provide the timing signal as an output signal via at least one of the external electrical contacts.

16. The device of claim 14 wherein the electronic circuitry comprises a temperature sensor and wherein the first die and the second die are coupled together by a thermally conductive epoxy.

17. The device of claim 16 further comprising at least one encapsulant, wherein the at least one encapsulant is configured such that the first die is completely encapsulated relative to an ambient environment external to the device.

18. The device of claim 7 further comprising a heating element, wherein the electronic circuitry is configured to control the heating element so as to heat the micromachined resonator to a predetermined temperature during operation of the device.

19. The device of claim 18 wherein the micromachined resonator is characterized by a first turnover temperature and wherein the first turnover temperature is greater than the predetermined temperature.

20. The device of claim 7 , embodied as a multi-die package, the multi-die package comprising a circuits die and a MEMS die, the micromachined resonator being carried by the MEMS die, wherein the MEMS die is mounted to the circuits die at least in part by, and is electrically connected with the circuits die by, a plurality of solder ball connections, and wherein the multi-chip package further comprises a number of stand-off structures, the MEMS die being mounted in a stacked relationship with the circuits die, with the stand-off structures having a greater height than the MEMS die so as to support the MEMS die in a flip-chip configuration between the circuits die and substrate surface, to which the multi-die package is to be mounted.

21. An oscillator integrated circuit device comprising:

a first die, having a micromachined resonator and at least one electrode to sense a frequency of resonant motion of the micromachined resonator, wherein the micromachined resonator comprises first, second, third and fourth beams, each of the beams comprising at least one layer of crystal silicon having an impurity dopant having concentration which is greater than or equal to 10 19 cm −3 , each of the beams an anchored end and a swinging end, and at least one connecting structure that mechanically couples together the anchored ends of the beams;

a second die having electronic circuitry that is structured so as to, during operation of the integrated circuit package, excite the micromachined resonator to vibrating motion and to generate, from a signal provided by the at least one electrode, a timing signal;

an encapsulant that in combination with one or more structures, insulates the first die from an ambient environment external to the oscillator integrated circuit device; and

one or more electrical contacts on an exterior surface of the oscillator integrated circuit device, the one or more electrical contacts to provide the timing signal as an output of the oscillator integrated circuit device;

wherein

the micromachined resonator has a first axis,

the swinging end of the first beam and the swinging end of the second beam are arranged symmetrically about the first axis, and are configured to simultaneously deflect under the application of electrical stimuli, in a common direction along a second axis perpendicular to the first axis,

the swinging end of the third beam and the swinging end of the fourth beam are also arranged symmetrically about the first axis, and are also configured to simultaneously deflect under the application of the electrical stimuli, in a common direction along the second axis,

the swinging end of the first beam and the swinging end of the third beam are configured to simultaneously deflect under the application of the electrical stimuli in opposite directions along the second axis,

the swinging end of the second beam and the swinging end of the fourth beam are configured to simultaneously deflect under the application of the electrical stimuli in opposite directions along the second axis,

the at least one laver of crystal silicon has a silicon crystal axis,

the micromachined resonator is oriented, relative to the silicon crystal axis, such that a first two of the first beam, the second beam, the third beam and the fourth beam are oriented at respective, reciprocal angles about the silicon crystal axis and such that a second two of the first beam, the second beam, the third beam and the fourth beam are oriented at respective, reciprocal angles about the silicon crystal axis,

the first two and the second two are oriented at one or more angles relative to each other, such that a contribution of a temperature coefficient of frequency (TCF) of the micromachined resonator from the first two is substantially negated by a contribution to the TCF from the second two, and

the sensed frequency of resonant motion is dependent on motion of the four beams.

22. The oscillator integrated circuit device of claim 21 , embodied as a multi-die package, the multi-die package comprising a circuits die and a MEMS die, the micromachined resonator being carried by the MEMS die, wherein the MEMS die is mounted to the circuits die at least in part by, and is electrically connected with the circuits die by, a plurality of solder ball connections, and wherein the multi-chip package further comprises a number of stand-off structures, the MEMS die being mounted in a stacked relationship with the circuits die, with the stand-off structures having a greater height than the MEMS die so as to support the MEMS die in a flip-chip configuration between the circuits die and substrate surface, to which the multi-die package is to be mounted.

Assignments (2)
SECURITY INTEREST Recorded Jun 30, 2026
From: SITIME CORPORATION
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 075862/0712 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 2, 2024
From: DOLL, JOSEPH C.; LUTZ, MARKUS; HILL, GINEL; BERGER, RENATA M.; GROSJEAN, CHARLES I.; HAGELIN, PAUL M.; PARTRIDGE, AARON
To: SITIME CORPORATION
Reel/Frame 065997/0992 →
Continuity (5)
Continuation 17384535 · Jul 23, 2021
Division 15627049 · Jun 19, 2017
Division 13759013 · Feb 4, 2013
Provisional Application 61617230 · Mar 29, 2012
Provisional Application 61594357 · Feb 2, 2012
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