Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
An acoustic resonator device, filter devices, and methods of making the same. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, where the back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. The device further includes an interdigital transducer formed on the front surface of the piezoelectric plate, where interleaved fingers of the IDT disposed on the diaphragm are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers include a first layer adjacent the diaphragm and a second layer over the first layer, the second layer having a narrower width than the first layer.
1. An acoustic resonator comprising:
a substrate;
a piezoelectric layer attached to the substrate either directly or via one or more intermediate layers; and
an interdigital transducer (IDT) at the piezoelectric layer and having a plurality of interleaved fingers that each comprise a first layer adjacent the piezoelectric layer and a second layer over the first layer,
wherein the first layer has a top surface that extends at a first angle relative to the surface of the piezoelectric layer, and the second layer has a sidewall that extends at a second angle relative to the surface of the piezoelectric layer,
wherein the second angle is greater than the first angle, and
wherein a thickness of the first layer is less than a thickness of the second layer, with the respective thicknesses being measured in a direction substantially orthogonal to the surface of the piezoelectric layer.
2. The acoustic resonator of claim 1 , wherein the first angle is in a range between 10 and 40 degrees and the second angle is in a range between 70 and 90 degrees.
3. The acoustic resonator of claim 1 , wherein the first layer comprises a sidewall that extends from the surface of the piezoelectric layer to the top surface at a third angle that is greater than the first angle and different than the second angle.
4. The acoustic resonator of claim 1 , wherein a width of the first layer is greater than a width of the second layer, with the respective widths being measured in a direction substantially parallel to the surface of the piezoelectric layer.
5. The acoustic resonator of claim 1 , wherein the one or more intermediate layers comprises at least one of silicon dioxide and silicon nitride, and the piezoelectric layer includes a portion that forms a diaphragm that is over a cavity disposed in the one or more intermediate layers.
6. The acoustic resonator of claim 5 , wherein the IDT is configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
7. The acoustic resonator of claim 6 , wherein a direction of acoustic energy flow of the primary shear acoustic mode is substantially normal to front and back surfaces of the diaphragm.
8. The acoustic resonator of claim 1 , wherein the first layer is a different material than the second layer.
9. The acoustic resonator of claim 8 , wherein the first layer comprises a low transverse acoustic impedance metal, and the second layer comprises a high transverse acoustic impedance metal.
10. An acoustic resonator comprising:
a substrate;
a piezoelectric layer attached to the substrate either directly or via one or more intermediate layers; and
an interdigital transducer (IDT) at a surface of the piezoelectric layer and having a plurality of interleaved fingers, with at least one of the plurality of interleaved fingers having a first layer on the piezoelectric layer and a second layer on the first layer, such that the first layer is between the second layer and the piezoelectric layer,
wherein the first layer has a top surface that extends at a first angle relative to the surface of the piezoelectric layer,
wherein the second layer has a sidewall that extends at a second angle relative to the surface of the piezoelectric layer, the second angle being different than the first angle, and
wherein the first layer comprises a sidewall that extends from the surface of the piezoelectric layer to the top surface of the first layer at a third angle that is greater than the second angle.
11. A filter device comprising:
a plurality of acoustic resonators, with at least one of the acoustic resonators comprising:
a substrate;
a piezoelectric layer attached to the substrate either directly or via one or more intermediate layers; and
an interdigital transducer (IDT) at a surface of the piezoelectric layer and having a plurality of interleaved fingers that each comprise a first layer adjacent the piezoelectric layer and a second layer over the first layer,
wherein the first layer has a top surface that extends at a first angle relative to the surface of the piezoelectric layer, and the second layer has a sidewall that extends at a second angle relative to the surface of the piezoelectric layer,
wherein the second angle is greater than the first angle,
wherein the IDT is configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, and
wherein a direction of acoustic energy flow of the primary shear acoustic mode is substantially normal to front and back surfaces of the piezoelectric layer.
12. The filter device of claim 11 , wherein the first angle is in a range between 10 and 40 degrees and the second angle is in a range between 70 and 90 degrees.
13. The filter device of claim 11 , wherein the first layer comprises a sidewall that extends from the surface of the piezoelectric layer to the sloped-top surface at a third angle that is greater than the first angle and different than the second angle.
14. The filter device of claim 11 ,
wherein a width of the first layer is greater than a width of the second layer, with the respective widths being measured in a direction substantially parallel to the surface of the piezoelectric layer, and
wherein a thickness of the first layer is less than a thickness of the second layer, with the respective thicknesses being measured in a direction substantially orthogonal to the surface of the piezoelectric layer.
15. The filter device of claim 11 ,
wherein the one or more intermediate layers of the at least one acoustic resonator comprises at least one of silicon dioxide and silicon nitride, and the piezoelectric layer includes a portion that forms a diaphragm that is over a cavity disposed in the one or more intermediate layers, and
wherein the IDT is configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
16. The filter device of claim 11 , wherein the first layer is a different material than the second layer, the first layer comprising a low transverse acoustic impedance metal, and the second layer comprising a high transverse acoustic impedance metal.
17. The acoustic resonator of claim 10 ,
wherein a width of the first layer is greater than a width of the second layer, with the respective widths being measured in a direction substantially parallel to the surface of the piezoelectric layer, and
wherein a thickness of the first layer is less than a thickness of the second layer, with the respective thicknesses being measured in a direction substantially orthogonal to the surface of the piezoelectric layer.
18. The acoustic resonator of claim 10 , wherein the first angle is in a range between 10 and 40 degrees, and the second angle is in a range between 70 and 90 degrees.
19. The acoustic resonator of claim 18 , wherein the second angle is 80 degrees.