IP Library › Granted Patent US 12,324,268
Granted Patent B2
US 12,324,268 · App. 18/431,753 · Granted Jun 3, 2025

Image sensor device

Inventor: Rajesh Katkar (Milpitas, CA)
Assignee: Adeia Semiconductor Technologies LLC
H10F39/809H01L21/76898H01L23/481H01L24/18H10F39/018H10F39/026H10F39/199H10F39/804H10F39/811H01L2224/04105H01L2224/12105H01L2224/18H01L2224/19H01L2224/32145H01L2224/73267H01L2924/15153H01L2924/16235
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Quick Facts
Patent No.
US 12,324,268
App. No.
18/431,753
Granted
Jun 3, 2025
Kind
B2
Abstract

Methods of forming a back side image sensor device, as well as back side image sensor devices formed, are disclosed. In one such a method, an image sensor wafer having a first dielectric layer with a first surface is obtained. A reconstituted wafer having a processor die and a second dielectric layer with a second surface is obtained. The reconstituted wafer and the image sensor wafer are bonded to one another including coupling the first surface of the first dielectric layer and the second surface of the second dielectric layer. In another method, such formation is for a processor die bonded to an image sensor wafer. In yet another method, such formation is for a processor die bonded to an image sensor die.

Claims (49)

1. An image sensor device, comprising:

an image sensor die having a first dielectric layer with a first surface, wherein the first surface extends across at least one light sensing element of the image sensor die;

a processor die having a second dielectric layer with a second surface, the second dielectric layer extending across the processor die, wherein insulating material extends along substantially an entire side surface of the processor die;

the first dielectric layer includes a first plurality of metallic pads of a first metal layer; and

the second dielectric layer includes a second plurality of metallic pads of a second metal layer; and wherein:

the first dielectric layer of the image sensor die and the second dielectric layer of the processor die are directly bonded to one another without any adhesive between the first surface and the second surface; and

at least some of the first plurality of metallic pads and the second plurality of metallic pads are directly bonded to one another for electrical connectivity.

2. The image sensor device according to claim 1 , wherein the insulating material extends along all of the side surface of the processor die.

3. The image sensor device according to claim 1 , wherein the insulating material comprises a molding material, and the second dielectric layer extends across the molding material.

4. The image sensor device according to claim 1 , further comprising:

conductive pathways through the insulating material coupled for electrical conductivity to at least one of a plurality of metal layers of the image sensor die.

5. The image sensor device according to claim 4 , wherein the conductive pathways are plated pillars or vias, the image sensor device further comprising a redistribution layer on the insulating material and interconnected to the conductive pathways for electrical communication.

6. The image sensor device of claim 1 , wherein the first dielectric layer of the image sensor die and the second dielectric layer of the processor die are directly bonded with oxide-to-oxide bonding.

7. The image sensor device of claim 1 , wherein the at least some of the first plurality of metallic pads and the second plurality of metallic pads are directly bonded to one another with copper-to-copper bonding.

8. The image sensor device of claim 1 , wherein the insulating material comprises an epoxy.

9. The image sensor device of claim 1 , wherein the insulating material comprises a coating.

10. The image sensor device of claim 1 , wherein the image sensor die is a back side illuminated image sensor.

11. An image sensor device, comprising:

an image sensor die having a first dielectric layer with a first surface, wherein the first surface extends across at least one light sensing element of the image sensor die;

a processor die having a second dielectric layer with a second surface, the second dielectric layer extending across the processor die, wherein insulating material extends along substantially an entire side surface of a bulk semiconductor layer of the processor die;

the first dielectric layer includes a first plurality of metallic pads of a first metal layer; and

the second dielectric layer includes a second plurality of metallic pads of a second metal layer; and wherein:

the first dielectric layer of the image sensor die and the second dielectric layer of the processor die are directly bonded to one another without any adhesive between the first surface and the second surface; and

at least some of the first plurality of metallic pads and the second plurality of metallic pads are directly bonded to one another for electrical connectivity.

12. The image sensor device according to claim 11 , wherein the insulating material extends along all of the side surface of the bulk semiconductor layer of the processor die.

13. The image sensor device according to claim 11 , wherein the insulating material comprises a molding material, and the second dielectric layer extends across the molding material.

14. The image sensor device according to claim 11 , further comprising:

conductive pathways through the insulating material coupled for electrical conductivity to at least one of a plurality of metal layers of the image sensor die.

15. The image sensor device according to claim 14 , wherein the conductive pathways are plated pillars or vias, the image sensor device further comprising a redistribution layer on the insulating material and interconnected to the conductive pathways for electrical communication.

16. The image sensor device of claim 11 , wherein the first dielectric layer of the image sensor die and the second dielectric layer of the processor die are directly bonded with oxide-to-oxide bonding.

17. The image sensor device of claim 11 , wherein the at least some of the first plurality of metallic pads and the second plurality of metallic pads are directly bonded to one another with copper-to-copper bonding.

18. The image sensor device of claim 11 , wherein the insulating material comprises an epoxy.

19. The image sensor device of claim 11 , wherein the insulating material comprises a coating.

20. The image sensor device of claim 11 , wherein the image sensor die is a back side illuminated image sensor.

21. The image sensor device according to claim 1 , wherein the insulating material comprises more than one layer.

22. The image sensor device according to claim 11 , wherein the insulating material comprises more than one layer.

23. An image sensor device, comprising:

an image sensor die having a first dielectric layer with a first surface, wherein the first surface extends across at least one light sensing element of the image sensor die;

a processor die having a second dielectric layer with a second surface, the second dielectric layer extending across the processor die, wherein insulating material is on side surfaces of the processor die;

the first dielectric layer including a first plurality of metallic pads of a first metal layer; and

the second dielectric layer including a second plurality of metallic pads of a second metal layer; and wherein:

the first dielectric layer of the image sensor die and the second dielectric layer of the processor die are directly bonded to one another without any adhesive between the first surface and the second surface; and

at least some of the first plurality of metallic pads and the second plurality of metallic pads are directly bonded to one another for electrical connectivity.

24. The image sensor device of claim 23 , wherein the first dielectric layer of the image sensor die and the second dielectric layer of the processor die are directly bonded with oxide-to-oxide bonding.

25. The image sensor device of claim 23 , wherein the at least some of the first plurality of metallic pads and the second plurality of metallic pads are directly bonded to one another with copper-to-copper bonding.

26. The image sensor device of claim 23 , wherein the insulating material comprises an epoxy.

27. The image sensor device of claim 23 , wherein the image sensor die is a back side illuminated image sensor.

28. The image sensor device of claim 23 , wherein a diced sidewall extends from a back side of the image sensor die opposite the first surface through at least the second dielectric layer of the processor die.

29. The image sensor device of claim 23 , wherein the first metal layer is one of a plurality of metal layers on a front side of the image sensor die, and wherein a conductor electrically interconnects at least one of the plurality of metal layers through a back side of the image sensor die.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2024
From: KATKAR, RAJESH
To: INVENSAS CORPORATION
Reel/Frame 067348/0926 →
CHANGE OF NAME Recorded May 8, 2024
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 067354/0249 →
CHANGE OF NAME Recorded May 8, 2024
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 067354/0254 →
Continuity (7)
Continuation 17353103 · Jun 21, 2021
Continuation 16513489 · Jul 16, 2019
Continuation In Part 16370747 · Mar 29, 2019
Continuation 15875067 · Jan 19, 2018
Division 14945292 · Nov 18, 2015
Provisional Application 62090788 · Dec 11, 2014
Related Publication 20240266377A1 · Aug 8, 2024
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