Integrated circuit having hybrid sheet structure
An integrated circuit (IC) includes first through fourth nano-sheet structures extending in a first direction and having respective first through fourth widths along a second direction perpendicular to the first direction, and first through fourth via structures electrically connected to corresponding ones of the first through fourth nano-sheet structures. The second width has a value greater than that of the third width. A width of the second via structure along the second direction has a value greater than that of a width of the third via structure along the second direction. The second and third nano-sheet structures are positioned between the first and fourth nano-sheet structures. The second and third via structures are configured to electrically connect the second and third nano-sheet structures to a first portion of a back-side power distribution structure configured to carry one of a power supply voltage or a reference voltage. The first and fourth via structures are configured to electrically connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure configured to carry the other of the power supply voltage or the reference voltage.
1 . An integrated circuit (IC) structure comprising:
first through fourth nano-sheet structures extending in a first direction and having respective first through fourth widths along a second direction perpendicular to the first direction; and
first through fourth via structures electrically connected to corresponding ones of the first through fourth nano-sheet structures,
wherein
the second width has a value greater than that of the third width,
a width of the second via structure along the second direction has a value greater than that of a width of the third via structure along the second direction,
the second and third nano-sheet structures are positioned between the first and fourth nano-sheet structures,
the second and third via structures are configured to electrically connect the second and third nano-sheet structures to a first portion of a back-side power distribution structure configured to carry one of a power supply voltage or a reference voltage, and
the first and fourth via structures are configured to electrically connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure configured to carry the other of the power supply voltage or the reference voltage.
2 . The IC structure of claim 1 , further comprising a plurality of metal-like defined (MD) segments overlying the second nano-sheet structure, wherein
each MD segment of the plurality of MD segments extends along the second direction to an edge at a location between the second and third nano-sheet structures, and
the edges of the plurality of MD segments are aligned in the first direction.
3 . The IC structure of claim 1 , wherein the second nano-sheet structure is continuous with the third nano-sheet structure.
4 . The IC structure of claim 1 , wherein the first width is one first width value of multiple first width values of the width of the first nano-sheet structure.
5 . The IC structure of claim 1 , wherein the second width is one second width value of multiple second width values of the width of the second nano-sheet structure.
6 . The IC structure of claim 1 , wherein the third width is one third width value of multiple third width values of the width of the third nano-sheet structure.
7 . The IC structure of claim 1 , wherein the fourth width is one fourth width value of multiple fourth width values of the width of the fourth nano-sheet structure.
8 . The IC structure of claim 1 , wherein the first through fourth via structures are aligned along the second direction.
9 . An integrated circuit (IC) structure comprising:
first through fourth nano-sheet structures extending in a first direction, the second and third nano-sheet structures being between the first and fourth nano-sheet structures;
first through fourth via structures electrically connected to corresponding ones of the first through fourth nano-sheet structures;
first through fourth metal-like defined (MD) segments extending in a second direction and overlapping corresponding ones of the first through fourth via structures, the first through fourth MD segments being included in S/D structures of one or more transistors; and
a back-side power distribution structure disposed such that the first through fourth nano-sheet structures are between the back-side power distribution structure and the MD segments, wherein:
the second and third via structures electrically connect the second and third nano-sheet structures to a first portion of the back-side power distribution structure that is configured to carry one of a power supply voltage or a reference voltage, and
the first and fourth via structures electrically connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure that is configured to carry the other of the power supply voltage or the reference voltage.
10 . The IC structure of claim 9 , further comprising metal segments extending in the first direction and overlying the first through fourth nano-sheet structures, and disposed such that the first through fourth MD segments are between the metal segments and the first through fourth nano-sheet structures.
11 . The IC structure of claim 10 , wherein at least one of the metal segments is electrically connected to one of the first through fourth MD segments.
12 . The IC structure of claim 10 , wherein
the first and second nano-sheet structures are in a first row of cells,
the third and fourth nano-sheet structures are in a second row of cells, the first and second rows of cells having a border therebetween extending in the first direction, and
at least one of the metal segments overlies the border and is not used for electrical connections to a front-side power distribution structure along the border.
13 . The IC structure of claim 9 , wherein:
the first and second nano-sheet structures are in a first row of cells,
the third and fourth nano-sheet structures are in a second row of cells, the first and second rows of cells having a border therebetween extending in the first direction,
the second and third nano-sheet structures have a same doping type,
the IC structure is structured according to a fabrication process having a minimum spacing rule for a distance in the second direction between the second nano-sheet structure and the third nano-sheet structure, and
the border is separated from one of the first through fourth MD segments by a first distance that has a value less than the minimum spacing rule for adjacent MD regions of the fabrication process.
14 . An integrated circuit (IC) structure comprising:
first through fourth nano-sheet structures extending in a first direction, the second and third nano-sheet structures being between the first and fourth nano-sheet structures;
first through fourth via structures electrically connected to corresponding ones of the first through fourth nano-sheet structures; and
a plurality of metal-like defined (MD) segments overlying the second nano-sheet structure,
wherein
the second and third via structures are configured to electrically connect the second and third nano-sheet structures to a first portion of a back-side power distribution structure configured to carry one of a power supply voltage or a reference voltage,
the first and fourth via structures are configured to electrically connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure configured to carry the other of the power supply voltage or the reference voltage,
each MD segment of the plurality of MD segments extends along a second direction and has a corresponding first edge at a location between the second and third nano-sheet structures, and
the first edges of the MD segments of the plurality of MD segments are aligned in the first direction.
15 . The IC of structure claim 14 , wherein:
the first and second nano-sheet structures are in a first row of cells,
the third and fourth nano-sheet structures are in a second row of cells, the first and second rows of cells having a border therebetween extending in the first direction, and
the first edge of each MD segment of the plurality of MD segments is spaced apart from the border.
16 . The IC of structure claim 14 , wherein the second nano-sheet structure is continuous with the third nano-sheet structure.
17 . The IC of structure claim 14 , wherein the first through fourth via structures are aligned along the second direction.
18 . The IC of structure claim 14 , further comprising metal segments extending in the first direction and overlying the first through fourth nano-sheet structures, and disposed such that the plurality of MD segments is between the metal segments and the first through fourth nano-sheet structures.
19 . The IC of structure claim 18 , wherein at least one of the metal segments is electrically connected to one of the plurality of MD segments.
20 . The IC of structure claim 18 , wherein
the first and second nano-sheet structures are in a first row of cells,
the third and fourth nano-sheet structures are in a second row of cells, the first and second rows of cells having a border therebetween extending in the first direction, and
at least one of the metal segments overlies the border and is not used for electrical connections to a front-side power distribution structure along the border.