Non-lid-bonded MEMS resonator with phosphorus dopant
A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.
1. A semiconductor device comprising:
a substrate;
a layer stack on the substrate, the layer stack including a lid layer, the lid layer having been conformally deposited over one or more underlying layers of the layer stack, the lid layer having at least one vent, the at least one vent being plugged so as to, in combination with the lid layer, hermetically seal a cavity relative to the substrate, the cavity being defined by etch of one or more oxide layers of the layer stack through the at least one vent prior to the at least one vent being plugged; and
a microelectromechanical system (MEMS) device having a body that is free to vibrate or deflect within the cavity during operation of the semiconductor device, the body formed from one or more layers fabricated from the substrate, wherein at least one layer of the one or more layers has a phosphorus dopant concentration greater than or equal to 10 19 /cm 3 ;
wherein the semiconductor device comprises circuitry to (1) receive a signal representing a temperature of operation and a signal representing the resonance frequency, and (2) generate, using the signal representing the temperature of operation and the signal representing the resonance frequency, a timing reference signal, wherein the timing reference signal is to have a reduced proportional variation in frequency relative to a proportional variation in the resonance frequency as a function of change in the temperature of operation of the resonator.
2. The semiconductor device of claim 1 wherein the at least one layer defines a plane, wherein the body has a dimension that is parallel to the plane, and wherein a concentration of the phosphorus dopant within the body is non-uniform along the dimension.
3. The semiconductor device of claim 1 wherein:
the MEMS device comprises a resonator, wherein the body is to vibrate within the cavity at a resonance frequency during operation of the semiconductor device; and
the semiconductor device comprises at least one structure of the semiconductor device to sense the temperature of operation of the resonator.
4. The semiconductor device of claim 3 wherein the at least one structure is also fabricated from the at least one layer, and wherein the body and the at least one structure each feature a layer, of the at least one layer, having a phosphorus dopant concentration greater than or equal to 10 19 /cm 3 .
5. The semiconductor device of claim 4 wherein the resonator is a first MEMS resonator, wherein the at least one structure comprises the first MEMS resonator in combination with a second MEMS resonator, and wherein the first and second MEMS resonators each have a different predominant resonance axis relative to a crystallographic orientation of the at least one layer.
6. The semiconductor device of claim 5 wherein the different predominant resonance axis of the each of the first and second MEMS resonators differ from one another by approximately forty-five degrees.
7. The semiconductor device of claim 5 wherein the second MEMS resonator is to vibrate during operation of the semiconductor device at a resonance frequency which has a substantially-different temperature-dependent variation in resonance frequency relative to a temperature-dependent variation in the resonance frequency of the first MEMS resonator.
8. The semiconductor device of claim 4 wherein the resonator is a first MEMS resonator, wherein the at least one structure comprises the first MEMS resonator in combination with a second MEMS resonator, and wherein the first and second MEMS resonators are characterized as having substantially different maximum phosphorus dopant concentrations.
9. The semiconductor device of claim 3 wherein the at least one structure comprises at least one of a diode, a thermistor and a transistor.
10. The semiconductor device of claim 1 wherein a maximum phosphorus dopant concentration of the at least one layer, within the body, is greater than or equal to 10 21 /cm 3 .
11. The semiconductor device of claim 1 wherein the at least one layer is doped using a drive-in doping process, such that the at least one layer exhibits a dopant concentration gradient relative to a boundary of the at least one layer.
12. A method of manufacturing a semiconductor device, the method comprising:
forming a layer stack on a substrate so as to include a lid layer, wherein forming comprises conformally-depositing the lid layer over one or more underlying layers of the layer stack, and wherein forming comprises forming the lid layer so as to have at least one vent;
forming a cavity within the layer stack and a microelectromechanical system (MEMS) device, the MEMS device having a body that is free to vibrate or deflect, within the cavity, during operation of the semiconductor device;
wherein forming the MEMS device comprises doping one or more layers of the layer stack to have a phosphorus dopant concentration greater than or equal to 10 19 /cm 3 , and forming the body to include the phosphorus dopant concentration greater than or equal to 10 19 /cm 3 ;
wherein forming the cavity comprises etching one or more oxide layers of the layer stack through the at least one vent and, subsequently, plugging the at least one vent to hermetically seal the body within the cavity; and
wherein the method further comprises forming the semiconductor device to include circuitry operable to (1) receive a signal representing a temperature of operation and a signal representing the resonance frequency, and (2) generate, using the signal representing the temperature of operation and the signal representing the resonance frequency, a timing reference signal, wherein the timing reference signal is to have a reduced proportional variation in frequency relative to a proportional variation in the resonance frequency as a function of change in the temperature of operation of the resonator.
13. The method of claim 12 wherein the at least one layer defines a plane, wherein the body has a dimension that is parallel to the plane, and wherein doping is performed such that a concentration of the phosphorus dopant is non-uniform within the body along the dimension.
14. The method of claim 12 wherein:
the MEMS device comprises a resonator, wherein the body is to vibrate within the cavity at a resonance frequency during operation of the semiconductor device; and
the method further comprises forming at least one structure of the semiconductor device to sense the temperature of operation of the resonator.
15. The method of claim 14 wherein forming the at least one structure comprises forming the at least one structure to also include a layer of the at least one layer and a phosphorus dopant concentration greater than or equal to 10 19 /cm 3 .
16. The method of claim 15 wherein the resonator is a first MEMS resonator, wherein the at least one structure comprises the first MEMS resonator in combination with a second MEMS resonator, and wherein forming the at least one structure comprises forming the first and second MEMS resonators each to have a different predominant resonance axis relative to a crystallographic orientation of the at least one layer.
17. The method of claim 16 wherein forming the first and second MEMS resonators comprises forming the different predominant resonance axis of the each of the first and second MEMS resonators to differ from one another by approximately forty-five degrees.
18. The method of claim 16 wherein forming the first and second MEMS resonators comprises forming the second MEMS resonator to have a substantially-different temperature-dependent variation in resonance frequency than a temperature-dependent variation in the resonance frequency of the first MEMS resonator.
19. The method of claim 15 wherein the resonator is a first MEMS resonator, wherein the at least one structure comprises the first MEMS resonator in combination with a second MEMS resonator, and wherein forming the first and second MEMS resonators comprises forming the first and second MEMS resonators to have substantially different maximum phosphorus dopant concentrations.
20. The method of claim 12 wherein doping comprises causing the phosphorus dopant concentration of the at least one layer, within the body, to have a maximum phosphorus dopant concentration that is greater than or equal to 10 21 /cm 3 .
21. The method of claim 12 wherein doping comprises conformally depositing, on one or more layers of the layer stack, a substance having phosphorus, and using a temperature-based drive-in doping process to transfer phosphorus from the substance into the at least one layer and, subsequently, removing the substance.
22. A method of manufacturing a semiconductor device, the method comprising:
forming a layer stack on a substrate so as to include a lid layer, wherein forming comprises conformally-depositing the lid layer over one or more underlying layers of the layer stack, and wherein forming comprises forming the lid layer so as to have at least one vent;
forming a cavity within the layer stack and a microelectromechanical system (MEMS) device, the MEMS device having a body that is free to vibrate or deflect, within the cavity, during operation of the semiconductor device;
wherein forming the MEMS device comprises conformally depositing a phosphorus-based substance on at least one layer of the layer stack and using a thermal drive-in process to transfer phosphorus from the substance into the at least one layer of the layer stack, to cause the at least one layer of the layer stack to have a phosphorus dopant concentration greater than or equal to 1019/cm3, and forming the body to include the phosphorus dopant concentration greater than or equal to 1019/cm3;
wherein forming the cavity comprises etching one or more oxide layers of the layer stack through the at least one vent, to thereby free the body to vibrate or deflect within the cavity, and, subsequently, plugging the at least one vent to hermetically seal the body within the cavity; and
wherein the semiconductor device comprises circuitry to (1) receive a signal representing a temperature of operation and a signal representing the resonance frequency, and (2) generate, using the signal representing the temperature of operation and the signal representing the resonance frequency, a timing reference signal, wherein the timing reference signal is to have a reduced proportional variation in frequency relative to a proportional variation in the resonance frequency as a function of change in the temperature of operation of the resonator.