Manufacturing method of patterning substrate, patterned substrate, and intermediate patterned substrate
View Patent ↗An excellent method of manufacturing a patterned substrate which is capable of easily patterning an insulation layer to provide a patterned substrate even when a difficult-to-etch material is used for the insulation layer, a patterned substrate obtained thereby, and a patterned substrate intermediate thereof are provided. The method of manufacturing a patterned substrate with the insulation layer and an electrode layer stacked in this order on a substrate comprising: forming an organic resist material layer; irradiating the organic resist material layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the organic resist material layer to form a first patterning layer; and removing the first patterning layer.
1 . A method of manufacturing a patterned substrate with an insulation layer and an electrode layer stacked in this order on a substrate, the method comprising:
forming a first organic hydroxyoxo tin layer;
irradiating the first organic hydroxyoxo tin layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the first organic hydroxyoxo tin layer to form a first patterning layer;
forming an insulation layer on a substrate having the first patterning layer so as to cover the first patterning layer;
forming an electrode layer on the insulation layer;
forming a second organic hydroxyoxo tin layer on the electrode layer;
irradiating the second organic hydroxyoxo tin layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the second organic hydroxyoxo tin layer to form a second patterning layer;
removing a portion of the electrode layer where the second patterning layer is absent;
removing a portion of the first patterning layer where the second patterning layer is absent and a portion of the insulation layer which lies on the first patterning layer; and
removing the second patterning layer.
2 . The method according to claim 1 , wherein when forming the first organic hydroxyoxo tin layer and/or the second organic hydroxyoxo tin layer is the step of forming the first organic hydroxyoxo tin layer and/or the second organic hydroxyoxo tin layer using an organic hydroxyoxo tin precursor.
3 . The method according to claim 1 , wherein when removing the portion of the electrode layer where the second patterning layer is absent, the step of removing the portion of the first patterning layer where the second patterning layer is absent and the portion of the insulation layer which lies on the first patterning layer, and the step of removing the second patterning layer are executed in this order or at the same time.
4 . The method according to claim 2 , wherein the organic hydroxyoxo tin precursor is represented by formula (1)
RSnX 3 (1)
where R is a hydrocarbon group having 1 to 30 carbon atoms, and X is a hydrolyzable substituent.
5 . The method according to claim 1 , wherein the first organic hydroxyoxo tin layer and/or the second organic hydroxyoxo tin layer contains a composition represented by formula (2)
R z SnO (2-(z/2)-(x/2)) (OH) x (2)
where z and x satisfy 0<z≤2 and 0<(z+x)≤4.
6 . The method according to claim 1 , wherein the development removes an unirradiated portion of the first organic hydroxyoxo tin layer by acid in when irradiating the first organic hydroxyoxo tin layer with the radiation or the electromagnetic wave of the wavelength of 10 to 780 nm and developing the first organic hydroxyoxo tin layer to form the first patterning layer.
7 . The method according to claim 6 , wherein the removal of the unirradiated portion is performed by a gas-phase treatment using an acid gas.
8 . The method according to claim 7 , wherein the acid gas is hydrogen halide containing no water vapor.
9 . The method according to claim 1 , wherein the insulation layer is made of a difficult-to-etch material.
10 . The method according to claim 9 , wherein the difficult-to-etch material is a high-κ material having a relative dielectric constant κ of not less than 9.
11 . The method according to claim 10 , wherein the high-κ material having the relative dielectric constant κ of 9 or higher is at least one compound selected from the group consisting of hafnium oxide, hafnium silicate oxynitride, hafnium aluminate, zirconium oxide, tantalum oxide, aluminum zirconium oxide, aluminum oxide, lanthanum oxide, and aluminum silicate.
12 . The method according to claim 1 , wherein the development removes an unirradiated portion of the second organic hydroxyoxo tin layer by a gas-phase treatment using an acid gas in the step of irradiating the second organic hydroxyoxo tin layer with the radiation or the electromagnetic wave of the wavelength of 10 to 780 nm and developing the second organic hydroxyoxo tin layer to form the second patterning layer.
13 . The method according to claim 1 , wherein when removing the portion of the electrode layer where the second patterning layer is absent is executed by a gas-phase treatment using an acid gas.
14 . The method according to claim 1 , wherein when removing the portion of the first patterning layer where the second patterning layer is absent and the portion of the insulation layer which lies on the first patterning layer is executed by a gas-phase treatment using an acid gas.
15 . The method according to claim 1 , wherein when removing the second patterning layer is executed by a gas-phase treatment using an acid gas.
16 . The method according to claim 12 , wherein the acid gas is hydrogen halide containing no water vapor.
17 . A patterned substrate obtained by a method of manufacturing a patterned substrate as recited in claim 1 , comprising:
a substrate;
an insulation layer having a pattern configuration including a site where a patterning layer is removed; and
an electrode layer,
the substrate, the insulation layer, and the electrode layer being arranged in this order.
18 . A patterned substrate intermediate for obtaining a patterned substrate as recited in claim 17 , comprising:
a substrate;
a first pattering layer on the substrate; and
an insulation layer on the substrate in such a configuration as to include the first patterning layer.
19 . The patterned substrate intermediate according to claim 18 , further comprising
an electrode layer on the insulation layer.
20 . The patterned substrate intermediate according to claim 19 , further comprising
a second patterning layer on the electrode layer.
21 . The method according to claim 1 , wherein the wavelength of the electromagnetic wave with which the first organic hydroxyoxo tin layer and the second organic hydroxyoxo tin layer are irradiated is in the range of 10 to 360 nm.
22 . The method according to claim 1 , wherein the wavelength of the electromagnetic wave with which the first organic hydroxyoxo tin layer and the second organic hydroxyoxo tin layer are irradiated is in the range of 10 to 15 nm.