Semiconductor device and method for forming the same
A semiconductor structure includes a semiconductor substrate, a gate structure, a source/drain structure, a contact, a dielectric layer, and a metal line. The gate structure is on the semiconductor substrate. The source/drain structure is adjacent to the gate structure. The contact lands on the source/drain structure. The dielectric layer spas the contact and the gate structure. The metal line extends through the dielectric layer to the contact. The metal line includes a liner over the contact, a magnetic layer over the liner, a graphene layer over the magnetic layer, and a filling metal over the graphene layer. The magnetic layer has a greater permeability coefficient than the filling metal.
1. A semiconductor structure, comprising:
a substrate;
a gate pattern over the substrate;
epitaxial structures over the substrate and at opposite sides of the gate pattern;
a contact over one of the epitaxial structures;
a first conductive filling metal over the contact;
a first graphene layer lining a sidewall of the first conductive filling metal; and
a first magnetic layer over the first graphene layer.
2. The semiconductor structure of claim 1 , wherein the first magnetic layer has a greater permeability coefficient than the first conductive filling metal.
3. The semiconductor structure of claim 1 , wherein the first magnetic layer has a permeability coefficient greater than about 5×10 −5 H/m.
4. The semiconductor structure of claim 1 , further comprising:
a second graphene layer over a top surface of the first conductive filling metal.
5. The semiconductor structure of claim 4 , further comprising:
a second conductive filling metal over the first conductive filling metal; and
a third graphene layer lining a sidewall and a bottom surface of the second conductive filling metal.
6. The semiconductor structure of claim 5 , further comprising:
a second magnetic layer formed on the third graphene layer, the second magnetic layer separating the third graphene layer from the second graphene layer.
7. A semiconductor structure, comprising:
a substrate;
a gate over the substrate;
source/drain patterns over the substrate and at opposite sides of the gate;
a source/drain contact over one of the source/drain patterns;
a first conductive filling metal over the source/drain contact;
a first graphene layer lining a sidewall and a bottom surface of the first conductive filling metal;
a first magnetic layer wrapping around the first graphene layer; and
a second graphene layer lining a top surface of the first conductive filling metal.
8. The semiconductor structure of claim 7 , further comprising:
a second conductive filling metal over the first conductive filling metal; and
a third graphene layer lining a sidewall and a bottom surface of the second conductive filling metal.
9. The semiconductor structure of claim 8 , further comprising:
a second magnetic layer wrapping around the third graphene layer.
10. The semiconductor structure of claim 9 , further comprising:
a fourth graphene layer lining a top surface of the second conductive filling metal.
11. The semiconductor structure of claim 10 , wherein the fourth graphene layer has a thicker thickness than the third graphene layer.
12. The semiconductor structure of claim 10 , further comprising:
an aluminum layer over the fourth graphene layer.
13. The semiconductor structure of claim 1 , further comprising:
a second graphene layer lining a bottom surface of the first conductive filling metal; and
a second magnetic layer over the second graphene layer.
14. The semiconductor structure of claim 1 , wherein the first graphene layer has a thinner thickness than the first magnetic layer.
15. A semiconductor structure, comprising:
a substrate;
a gate pattern over the substrate;
epitaxial structures over the substrate and at opposite sides of the gate pattern;
a contact over one of the epitaxial structures;
a first conductive filling metal over the contact;
a first graphene layer lining a bottom surface of the first conductive filling metal; and
a first magnetic layer over the first graphene layer, the first magnetic layer separating the first graphene layer from the contact.
16. The semiconductor structure of claim 15 , further comprising:
a second graphene layer over a top surface of the first conductive filling metal.
17. The semiconductor structure of claim 15 , wherein the first magnetic layer has a greater permeability coefficient than the first conductive filling metal.
18. The semiconductor structure of claim 15 , wherein the first magnetic layer has a permeability coefficient greater than about 5×10 −5 H/m.
19. The semiconductor structure of claim 15 , further comprising:
a second conductive filling metal over the first conductive filling metal;
a second graphene layer lining a sidewall of the second conductive filling metal; and
a second magnetic layer formed on the second graphene layer.
20. The semiconductor structure of claim 15 , further comprising:
a second conductive filling metal over the first conductive filling metal;
a second graphene layer lining a bottom of the second conductive filling metal; and
a second magnetic layer formed on the second graphene layer, the second magnetic layer separating the second graphene layer from the first conductive filling metal.