IP Library › Granted Patent US 12,336,263
Granted Patent B2
US 12,336,263 · App. 18/474,948 · Granted Jun 17, 2025

Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers

Inventors: Walter A. Harrison (Palo Alto, CA); Paul A. Clifton (Palo Alto, CA); Andreas Goebel (Palo Alto, CA); R. Stockton Gaines (Santa Monica, CA)
Assignee: Acorn Semi, LLC
H10D64/64H01L21/283H01L21/28512H01L21/28518H01L21/324H10D62/405H10D62/83H10D62/832H10D64/62
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Quick Facts
Patent No.
US 12,336,263
App. No.
18/474,948
Granted
Jun 17, 2025
Kind
B2
Abstract

Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Claims (53)

1. An electrical device, comprising:

an n-channel transistor including a first electrical contact, comprising:

a first semiconductor region forming a first source/drain region of the n-channel transistor, the first source/drain region being an n-type doped region of the n-channel transistor;

a first ordered monolayer of atoms of a material in contact with a surface of the first semiconductor region, the atoms of the first ordered monolayer being coordinated with and bonded to atoms of the first semiconductor region at the surface of the first semiconductor region; and

a metallic material disposed over the first ordered monolayer of atoms such that the first ordered monolayer layer of atoms is interposed between the metallic material and the first semiconductor region enabling an electrical current to pass between the metallic material and the first semiconductor region through the first ordered monolayer of atoms when the first electrical contact is electrically biased; and

a p-channel transistor including a second electrical contact, comprising:

a second semiconductor region forming a second source/drain region of the p-channel transistor, the second source/drain region being a p-type doped region of the p-channel transistor;

the same metallic material disposed over the second semiconductor region, enabling an electrical current to pass between the metallic material and the second semiconductor region when the second electrical contact is electrically biased.

2. The electrical device of claim 1 , wherein the first ordered monolayer of atoms is an ordered monolayer of group V atoms.

3. The electrical device of claim 1 , wherein the first ordered monolayer of atoms is an ordered monolayer of group III atoms.

4. The electrical device of claim 1 , wherein the semiconductor region comprises a group IV semiconductor.

5. The electrical device of claim 1 , wherein each of the n-channel transistor and the p-channel transistor is a FinFET.

6. The electrical device of claim 1 , wherein each of the n-channel transistor and the p-channel transistor is a nanometer-scale FinFET.

7. An electrical device, comprising:

an n-channel transistor including a first electrical contact, comprising:

a first semiconductor region forming a first source/drain region of the n-channel transistor, the first source/drain region being an n-type doped region of the n-channel transistor;

a first ordered monolayer of atoms of a material in contact with a surface of the first semiconductor region, the atoms of the first ordered monolayer being coordinated with and bonded to atoms of the first semiconductor region at the surface of the first semiconductor region; and

a metallic material disposed over the first ordered monolayer of atoms such that the first ordered monolayer layer of atoms is interposed between the metallic material and the first semiconductor region enabling an electrical current to pass between the metallic material and the first semiconductor region through the first ordered monolayer of atoms when the first electrical contact is electrically biased; and

a p-channel transistor including a second electrical contact, comprising:

a second semiconductor region forming a second source/drain region of the p-channel transistor, the second source/drain region being a p-type doped region of the p-channel transistor;

the same metallic material disposed over the second semiconductor region, enabling an electrical current to pass between the metallic material and the second semiconductor region when the second electrical contact is electrically biased,

wherein the first ordered monolayer of atoms is a partial ordered monolayer of group V atoms having some gaps in coverage of the surface of the first semiconductor region.

8. An electrical device, comprising:

an n-channel transistor including a first electrical contact, comprising:

a first semiconductor region forming a first source/drain region of the n-channel transistor, the first source/drain region being an n-type doped region of the n-channel transistor;

a first ordered monolayer of atoms of a material in contact with a surface of the first semiconductor region, the atoms of the first ordered monolayer being coordinated with and bonded to atoms of the first semiconductor region at the surface of the first semiconductor region; and

a metallic material disposed over the first ordered monolayer of atoms such that the first ordered monolayer layer of atoms is interposed between the metallic material and the first semiconductor region enabling an electrical current to pass between the metallic material and the first semiconductor region through the first ordered monolayer of atoms when the first electrical contact is electrically biased; and

a p-channel transistor including a second electrical contact, comprising:

a second semiconductor region forming a second source/drain region of the p-channel transistor, the second source/drain region being a p-type doped region of the p-channel transistor;

the same metallic material disposed over the second semiconductor region, enabling an electrical current to pass between the metallic material and the second semiconductor region when the second electrical contact is electrically biased,

wherein the first ordered monolayer of atoms is a partial ordered monolayer of group III atoms having some gaps in coverage of the surface of the first semiconductor region.

9. An electrical device, comprising:

an n-channel transistor including a first electrical contact, comprising:

a first semiconductor region forming a first source/drain region of the n-channel transistor, the first source/drain region being an n-type doped region of the n-channel transistor;

a first ordered monolayer of atoms of a material in contact with a surface of the first semiconductor region, the atoms of the first ordered monolayer being coordinated with and bonded to atoms of the first semiconductor region at the surface of the first semiconductor region; and

a metallic material disposed over the first ordered monolayer of atoms such that the first ordered monolayer layer of atoms is interposed between the metallic material and the first semiconductor region enabling an electrical current to pass between the metallic material and the first semiconductor region through the first ordered monolayer of atoms when the first electrical contact is electrically biased; and

a p-channel transistor including a second electrical contact, comprising:

a second semiconductor region forming a second source/drain region of the p-channel transistor, the second source/drain region being a p-type doped region of the p-channel transistor;

the same metallic material disposed over the second semiconductor region, enabling an electrical current to pass between the metallic material and the second semiconductor region when the second electrical contact is electrically biased,

wherein some number of unsatisfied dangling bonds of the surface of the first semiconductor region remain in the first ordered monolayer.

10. An electrical contact, comprising:

an n-channel transistor including a first electrical contact, comprising:

a first semiconductor region forming a first source/drain region of the n-channel transistor, the first source/drain region being an n-type doped region of the n-channel transistor;

a first ordered monolayer of atoms of a material in contact with a surface of the first semiconductor region, the atoms of the first ordered monolayer being coordinated with and bonded to atoms of the first semiconductor region at the surface of the first semiconductor region; and

a metallic material disposed over the first ordered monolayer of atoms such that the first ordered monolayer layer of atoms is interposed between the metallic material and the first semiconductor region enabling an electrical current to pass between the metallic material and the first semiconductor material through the first ordered monolayer of atoms when the first electrical contact is electrically biased; and

a p-channel transistor including a second electrical contact, comprising:

a second semiconductor region forming a second source/drain region of the p-channel transistor, the second source/drain region being a p-type doped region of the p-channel transistor;

the same metallic material disposed over the second semiconductor region, enabling an electrical current to pass between the metallic material and the second semiconductor region when the second electrical contact is electrically biased,

wherein some fraction of atoms of the first ordered monolayer at the surface of the first semiconductor region are disordered and not in alignment with a crystal lattice of a semiconductor forming the first semiconductor region.

11. The electrical device of claim 7 , wherein the first ordered monolayer of group V atoms is a result of a deposition process involving decomposition of a vapor phase compound of a group V element.

12. The electrical device of claim 11 , wherein the vapor phase compound of group V element is a hydride of the group V element.

13. The electrical device of claim 12 , wherein the vapor phase compound is one of: ammonia, phosphine, arsine, and stibine.

14. The electrical device of claim 11 , wherein the vapor phase compound is a metalorganic compound.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2023
From: HARRISON, WALTER A.; CLIFTON, PAUL A.; GOEBEL, ANDREAS; GAINES, R. STOCKTON
To: ACORN TECHNOLOGIES, INC.
Reel/Frame 065035/0937 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2023
From: ACORN TECHNOLOGIES, INC.
To: ACORN SEMI, LLC
Reel/Frame 065035/0966 →
Continuity (8)
Continuation 18173541 · Feb 23, 2023
Continuation 17247803 · Dec 23, 2020
Continuation 16706510 · Dec 6, 2019
Continuation 15684707 · Aug 23, 2017
Continuation 15146562 · May 4, 2016
Continuation 14360473
Provisional Application 61563478 · Nov 23, 2011
Related Publication 20240030306A1 · Jan 25, 2024
References Cited (400)
US 2981877A · Noyce · 1961 [cited by applicant]
US 3614548A · Inoue · 1971 [cited by applicant]
US 3623925A · Jenkins et al. · 1971 [cited by applicant]
US 3719797A · Andrews, Jr. et al. · 1973 [cited by applicant]
US 3877054A · Boulin et al. · 1975 [cited by applicant]
US 3983264A · Schroen et al. · 1976 [cited by applicant]
US 4110488A · Risko · 1978 [cited by applicant]
US 4278830A · Stirn et al. · 1981 [cited by applicant]
US 4304042A · Yeh · 1981 [cited by applicant]
US 4316201A · Christou · 1982 [cited by examiner]
US 4356622A · Widmann · 1982 [cited by applicant]
US 4485265A · Gordon et al. · 1984 [cited by applicant]
US 4538342A · Camlibel et al. · 1985 [cited by applicant]
US 4691219A · Goth · 1987 [cited by applicant]
US 4696828A · Schachter et al. · 1987 [cited by applicant]
US 4698652A · Umemoto et al. · 1987 [cited by applicant]
US 4752815A · Tsao · 1988 [cited by applicant]
US 4763176A · Ito · 1988 [cited by applicant]
US 4772934A · Cunningham et al. · 1988 [cited by applicant]
US 4794444A · Liu et al. · 1988 [cited by applicant]
US 4796082A · Murakami et al. · 1989 [cited by applicant]
US 4800415A · Simmons et al. · 1989 [cited by applicant]
US 4801984A · Woodall · 1989 [cited by applicant]
US 4835580A · Havemann et al. · 1989 [cited by applicant]
US 4843029A · Joyce et al. · 1989 [cited by applicant]
US 4845050A · Kim et al. · 1989 [cited by applicant]
US 4960732A · Dixit et al. · 1990 [cited by applicant]
US 4961194A · Kuroda et al. · 1990 [cited by applicant]
US 5013685A · Chiu et al. · 1991 [cited by applicant]
US 5019530A · Kleinsasser et al. · 1991 [cited by applicant]
US 5021840A · Morris · 1991 [cited by applicant]
US 5045502A · Lau et al. · 1991 [cited by applicant]
US 5086321A · Batey et al. · 1992 [cited by applicant]
US 5093280A · Tully · 1992 [cited by applicant]
US 5216271A · Takagi et al. · 1993 [cited by applicant]
US 5216282A · Cote et al. · 1993 [cited by applicant]
US 5231306A · Meikle et al. · 1993 [cited by applicant]
US 5238872A · Thalapaneni · 1993 [cited by applicant]
US 5292677A · Dennison · 1994 [cited by applicant]
US 5294834A · Fatemi et al. · 1994 [cited by applicant]
US 5310698A · Wild · 1994 [cited by applicant]
US 5355021A · Crouch et al. · 1994 [cited by applicant]
US 5358574A · Sapori · 1994 [cited by applicant]
US 5382542A · Zinck et al. · 1995 [cited by applicant]
US 5442200A · Tischler · 1995 [cited by applicant]
US 5480829A · Abrokwah et al. · 1996 [cited by applicant]
US 5488231A · Kwon et al. · 1996 [cited by applicant]
US 5534449A · Dennison et al. · 1996 [cited by applicant]
US 5563448A · Lee et al. · 1996 [cited by applicant]
US 5592736A · Akram et al. · 1997 [cited by applicant]
US 5614745A · Motonami · 1997 [cited by applicant]
US 5619057A · Komatsu · 1997 [cited by applicant]
US 5628834A · Copel et al. · 1997 [cited by applicant]
US 5654234A · Shih et al. · 1997 [cited by applicant]
US 5677553A · Yamamoto et al. · 1997 [cited by applicant]
US 5689125A · Vaccaro et al. · 1997 [cited by applicant]
US 5744817A · Shannon · 1998 [cited by applicant]
US 5789312A · Buchanan et al. · 1998 [cited by applicant]
US 5793109A · Nakamura · 1998 [cited by applicant]
US 5793788A · Inaba et al. · 1998 [cited by applicant]
US 5851912A · Liaw et al. · 1998 [cited by applicant]
US 5869364A · Nakano et al. · 1999 [cited by applicant]
US 5876796A · Regolini et al. · 1999 [cited by applicant]
US 5897331A · Sopori · 1999 [cited by applicant]
US 5903053A · Iijima et al. · 1999 [cited by applicant]
US 5962883A · Hong et al. · 1999 [cited by applicant]
US 5985759A · Kim et al. · 1999 [cited by applicant]
US 6004879A · Hu et al. · 1999 [cited by applicant]
US 6015997A · Hu et al. · 2000 [cited by applicant]
US 6017790A · Liou et al. · 2000 [cited by applicant]
US 6057564A · Rennie · 2000 [cited by applicant]
US 6130503A · Negishi et al. · 2000 [cited by applicant]
US 6144097A · Asahina et al. · 2000 [cited by applicant]
US 6144098A · Iyer · 2000 [cited by applicant]
US 6150246A · Parsons · 2000 [cited by applicant]
US 6150672A · Kaneko · 2000 [cited by applicant]
US 6166487A · Negishi et al. · 2000 [cited by applicant]
US 6190975B1 · Kubo et al. · 2001 [cited by applicant]
US 6222267B1 · Omura et al. · 2001 [cited by applicant]
US 6225168B1 · Gardner et al. · 2001 [cited by applicant]
US 6268233B1 · Sano · 2001 [cited by applicant]
US 6274905B1 · Mo · 2001 [cited by applicant]
US 6284557B1 · Yiu et al. · 2001 [cited by applicant]
US 6287946B1 · Micovic et al. · 2001 [cited by applicant]
US 6303942B1 · Farmer, II · 2001 [cited by applicant]
US 6320238B1 · Kizilyalli et al. · 2001 [cited by applicant]
US 6323508B1 · Takahashi et al. · 2001 [cited by applicant]
US 6344673B1 · Aussilhou · 2002 [cited by applicant]
US 6346465B1 · Miura et al. · 2002 [cited by applicant]
US 6350685B1 · Asahina et al. · 2002 [cited by applicant]
US 6372536B1 · Fischer et al. · 2002 [cited by applicant]
US 6373076B1 · Alok et al. · 2002 [cited by applicant]
US 6388272B1 · Odekirk · 2002 [cited by applicant]
US 6396191B1 · Hagelstein et al. · 2002 [cited by applicant]
US 6426542B1 · Tan · 2002 [cited by applicant]
US 6444516B1 · Clevenger et al. · 2002 [cited by applicant]
US 6451690B1 · Matsumoto et al. · 2002 [cited by applicant]
US 6455937B1 · Cunningham · 2002 [cited by examiner]
US 6468890B2 · Bartsch et al. · 2002 [cited by applicant]
US 6509254B1 · Matsumoto et al. · 2003 [cited by applicant]
US 6511905B1 · Lee et al. · 2003 [cited by applicant]
US 6511910B2 · Asahina et al. · 2003 [cited by applicant]
US 6555455B1 · Wang et al. · 2003 [cited by applicant]
US 6521502B1 · Yu · 2003 [cited by applicant]
US 6559069B2 · Goldbach et al. · 2003 [cited by applicant]
US 6593219B2 · Matsumoto et al. · 2003 [cited by applicant]
US 6593229B1 · Yamamoto et al. · 2003 [cited by applicant]
US 6599644B1 · Zekentes et al. · 2003 [cited by applicant]
US 6605832B2 · Van De Walle · 2003 [cited by applicant]
US 6639288B1 · Kunikiyo · 2003 [cited by applicant]
US 6724068B2 · Matsuyama · 2004 [cited by applicant]
US 6724088B1 · Jammy et al. · 2004 [cited by applicant]
US 6914272B2 · Goetz et al. · 2005 [cited by applicant]
US 6972436B2 · Das et al. · 2005 [cited by applicant]
US 6979846B2 · Yagishita et al. · 2005 [cited by applicant]
US 6995430B2 · Langdo et al. · 2006 [cited by applicant]
US 7084423B2 · Grupp et al. · 2006 [cited by applicant]
US 7176483B2 · Grupp et al. · 2007 [cited by applicant]
US 7462860B2 · Grupp et al. · 2008 [cited by applicant]
US 7579231B2 · Matsuo et al. · 2009 [cited by applicant]
US 7863606B2 · Sung · 2011 [cited by applicant]
US 7884003B2 · Grupp et al. · 2011 [cited by applicant]
US 8110877B2 · Mukherjee et al. · 2012 [cited by applicant]
US 8952541B2 · Mukherjee et al. · 2015 [cited by applicant]
US 9209261B2 · Grupp et al. · 2015 [cited by applicant]
US 9461167B2 · Grupp et al. · 2016 [cited by applicant]
US 9905691B2 · Grupp et al. · 2018 [cited by applicant]
US 10090395B2 · Grupp et al. · 2018 [cited by applicant]
US 20010030342A1 · Ohnishi et al. · 2001 [cited by applicant]
US 20010030352A1 · Ruf et al. · 2001 [cited by applicant]
US 20020017658A1 · Tsubouchi et al. · 2002 [cited by applicant]
US 20020098692A1 · Miura · 2002 [cited by applicant]
US 20020106536A1 · Lee et al. · 2002 [cited by applicant]
US 20020163012A1 · Nihei et al. · 2002 [cited by applicant]
US 20020179980A1 · Yagishita et al. · 2002 [cited by applicant]
US 20020179993A1 · Hshieh et al. · 2002 [cited by applicant]
US 20030015707A1 · Bosco et al. · 2003 [cited by applicant]
US 20030020069A1 · Holmes et al. · 2003 [cited by applicant]
US 20030020165A1 · Matsumoto · 2003 [cited by applicant]
US 20030098489A1 · Amos et al. · 2003 [cited by applicant]
US 20030109114A1 · Niwa · 2003 [cited by applicant]
US 20030132452A1 · Boriuchi · 2003 [cited by applicant]
US 20030193074A1 · Hshieh et al. · 2003 [cited by applicant]
US 20040038467A1 · Darwish et al. · 2004 [cited by applicant]
US 20040093575A1 · Heath et al. · 2004 [cited by applicant]
US 20040129087A1 · Rowe et al. · 2004 [cited by applicant]
US 20050093027A1 · Grupp et al. · 2005 [cited by applicant]
US 20050104137A1 · Faulkner et al. · 2005 [cited by applicant]
US 20050104152A1 · Snyder et al. · 2005 [cited by applicant]
US 20050247956A1 · Grupp et al. · 2005 [cited by applicant]
US 20060145271A1 · Ichimori et al. · 2006 [cited by applicant]
US 20060178015A1 · Verhaverbeke · 2006 [cited by applicant]
US 20070001223A1 · Boyd et al. · 2007 [cited by applicant]
US 20070187831A1 · Ahn · 2007 [cited by examiner]
US 20070262363A1 · Tao et al. · 2007 [cited by applicant]
US 20080179752A1 · Yamauchi et al. · 2008 [cited by applicant]
US 20110092047A1 · Gaines et al. · 2011 [cited by applicant]
US 20110169124A1 · Grupp et al. · 2011 [cited by applicant]
US 20110210376A1 · Grupp · 2011 [cited by examiner]
US 20110241116A1 · Lavoie et al. · 2011 [cited by applicant]
US 20120009771A1 · Cabral, Jr. et al. · 2012 [cited by applicant]
US 20120181632A1 · Watanabe et al. · 2012 [cited by applicant]
US 20120285517A1 · Souza et al. · 2012 [cited by applicant]
US 20130056833A1 · Takeoka et al. · 2013 [cited by applicant]
US 20140117465A1 · Huang et al. · 2014 [cited by applicant]
EP 0042066A2 · 1981 [cited by applicant]
EP 0068897A2 · 1983 [cited by applicant]
EP 0111364A2 · 1984 [cited by applicant]
EP 0168125A1 · 1986 [cited by applicant]
EP 0458353B1 · 1991 [cited by applicant]
EP 0789388A2 · 1997 [cited by applicant]
FR 2814856A1 · 2002 [cited by applicant]
GB 122594A · 1919 [cited by applicant]
JP S61133646A · 1986 [cited by applicant]
JP S6261363A · 1987 [cited by applicant]
JP S63157466A · 1988 [cited by applicant]
JP S63175471A · 1988 [cited by applicant]
JP H01186672A · 1989 [cited by applicant]
JP H0226073A · 1990 [cited by applicant]
JP H0329355A · 1991 [cited by applicant]
JP H03191518A · 1991 [cited by applicant]
JP H03274735A · 1991 [cited by applicant]
JP H04199628A · 1992 [cited by applicant]
JP H04273447A · 1992 [cited by applicant]
JP H04284668A · 1992 [cited by applicant]
JP H065737B2 · 1994 [cited by applicant]
JP H0653165A · 1994 [cited by applicant]
JP H0661177A · 1994 [cited by applicant]
JP H07122519A · 1995 [cited by applicant]
JP H07263375A · 1995 [cited by applicant]
JP H0864800A · 1996 [cited by applicant]
JP H08167693A · 1996 [cited by applicant]
JP 2630279B2 · 1997 [cited by applicant]
JP H09289178A · 1997 [cited by applicant]
JP H1027847A · 1998 [cited by applicant]
JP H1074707A · 1998 [cited by applicant]
JP H10135452A · 1998 [cited by applicant]
JP H10209445A · 1998 [cited by applicant]
JP H10335265A · 1998 [cited by applicant]
JP H1126713A · 1999 [cited by applicant]
JP H11162874A · 1999 [cited by applicant]
JP H11233760A · 1999 [cited by applicant]
JP H11330482A · 1999 [cited by applicant]
JP 2000101064A · 2000 [cited by applicant]
JP 2000101100A · 2000 [cited by applicant]
JP 2000174261A · 2000 [cited by applicant]
JP 2000195954A · 2000 [cited by applicant]
JP 2000216241A · 2000 [cited by applicant]
JP 2000228523A · 2000 [cited by applicant]
JP 2000236086A · 2000 [cited by applicant]
JP 2000299479A · 2000 [cited by applicant]
JP 3191728B2 · 2001 [cited by applicant]
JP 2001223180A · 2001 [cited by applicant]
JP 3208599B2 · 2001 [cited by applicant]
JP 2002075909A · 2002 [cited by applicant]
JP 2002093742A · 2002 [cited by applicant]
JP 2002151428A · 2002 [cited by applicant]
JP 2002184978A · 2002 [cited by applicant]
JP 2002217425A · 2002 [cited by applicant]
KR 19910006249B1 · 1991 [cited by applicant]
KR 92002350B1 · 1992 [cited by applicant]
KR 19920010131B1 · 1992 [cited by applicant]
KR 19940020550A · 1994 [cited by applicant]
KR 19950010873B1 · 1995 [cited by applicant]
KR 19970030333A · 1997 [cited by applicant]
KR 19980024649A · 1998 [cited by applicant]
KR 19990025041A · 1999 [cited by applicant]
KR 100197653B1 · 1999 [cited by applicant]
KR 19990045323A · 1999 [cited by applicant]
KR 20000025576A · 2000 [cited by applicant]
KR 20000027908A · 2000 [cited by applicant]
KR 100290467B1 · 2001 [cited by applicant]
SE 0875077T3 · 2004 [cited by applicant]
WO WO8800392A1 · 1988 [cited by applicant]
WO WO9311558A1 · 1993 [cited by applicant]
WO WO9534095A1 · 1995 [cited by applicant]
WO WO9726678A2 · 1997 [cited by applicant]
WO WO9733308A1 · 1997 [cited by applicant]
WO WO0128677A1 · 2001 [cited by applicant]
WO WO0163677A1 · 2001 [cited by applicant]
Ting et al. (“The Use of Titanium-based Contact Barrier Layers in Silicon Technology.” Thin Solid Films, 96, 327-345, Lectronics and Optics, 1982) (Year: 1982). [cited by examiner]
Acorn Technologies, Inc., International Application No. PCT/US2012/060893 filed Oct. 18, 2012, ISA/US, International Search Report and Written Opinion, Dec. 11, 2012, 23 pages. [cited by applicant]
Geng; et al., “Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface”, IEEE Electron Device Letters (Sep. 2009), 30(9):963-965. [cited by applicant]
Knoch; et al., “Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxidesemiconductor field-effect transistors using dopant segregation”, Appl. Phys. Lett. (2005), 87:263505. [cited by applicant]
Li; et al., “Controlled modification of Schottky barrier height by partisan interlayer”, Solid State Communications (2011) 151:1641-1644. [cited by applicant]
“Patents Act 1977: Examination Report under Section 18(3)”, UK Intellectual Property Office dated Apr. 29, 2015, Application No. GB1409999.8 (filed Oct. 18, 2012), 5 pgs. [cited by applicant]
McKinley; et al., “Control of Ge homojunction band offsets via ultrathin Ga—As dipole layers”, Applied Surface Science (1992), 56-58(Part 2):762-765. [cited by applicant]
McKinley; et al., “Controlled modification of heterojunction band lineups by diffusive intralayers”, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (May/Jun. 1990), 8(3):1917-21. [cited by applicant]
Rinaldi, “Basics of Molecular Beam Epitaxy (MBE)”, Annual Report 2002, Optoelectronics Department, University of Ulm, 8 pages. [cited by applicant]
Uhrberg; et al., “Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface”, Physical Review B (Mar. 15, 1987) 35(8):3945-3951. [cited by applicant]
Yamauchi; et al., “Novel doping technology for 1nm NiSi/Si junction with dipoles comforting Schottky (DCS) barrier”, IEEE Electron Devices Meeting (2007), pp. 963-966. [cited by applicant]
Archibong, et al., On the Structure of A1203 and Photoelectron Spectra of A12O2 and A12O3; J. Phys. Chem.A 1999, 103, pp. 1109-1114. [cited by applicant]
Bortz, et al., Temperature Dependence of the Electronic Structure of Oxides: MgO, MgAl2O4 and Al2O3; Physica Scripta., col. 41, pp. 537-541, 1990. [cited by applicant]
Carver, et al., Specific Contact Resistivity of Metal-Semiconductor Contacts—A New, Accurate Method Linked to Spreading Resistance; IEEE Transactions on Electron Devices, vol. 35, No. 4, Apr. 1988, pp. 489-497. [cited by applicant]
Lide, David R., CRC Handbook of Chemistry and Physics, Internet Version 2005; <http://www.hbcpnetbase.com>, CRC Press, Boca Raton, FL, 2005; 11 pp. [cited by applicant]
DiStefano, et al., The Band Edge of Amorphous SiO2 By Photoinjection and Photoconductivity Measurements; Solid State Communications, vol. 9, pp. 2259-2261, 1971, Pergamon Press; Printed in Great Britain. [cited by applicant]
Fitting, et al., Monte-Carlo Approach of Electron Emission from SiO2; Phys. Stat. Sol. (a) 81, 323 (1984) pp. 323-332. [cited by applicant]
IPR2020-01182; [cited by applicant]
IPR2020-01182; [cited by applicant]
IPR2020-01183; [cited by applicant]
IPR2020-01183; [cited by applicant]
IPR2020-01204; [cited by applicant]
IPR2020-01204; [cited by applicant]
IPR2020-01205; [cited by applicant]
IPR2020-01205; [cited by applicant]
IPR2020-01206; [cited by applicant]
IPR2020-01206; [cited by applicant]
IPR2020-01207; [cited by applicant]
IPR2020-01207; [cited by applicant]
IPR2020-01241; [cited by applicant]
IPR2020-01241; [cited by applicant]
IPR2020-01264; [cited by applicant]
IPR2020-01264; [cited by applicant]
IPR2020-01279; [cited by applicant]
IPR2020-01279; [cited by applicant]
IPR2020-01282; [cited by applicant]
IPR2020-01282; [cited by applicant]
Lang et al., Theory of Metal Surfaces: Work Functon; Physical Review B, vol. 3, No. 4; Feb. 15, 1971; pp. 1215-1223. [cited by applicant]
Rohatgi et al., Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation Technologies; IEEE Transactions on Electron Devices, vol. 47, No. 5, May 2000; pp. 987-993. [cited by applicant]
Sakurai, et al., Alpha-Power Law MOSFET Model and its Applications to CMOS Inverter Delay and Other Formulas; IEEE Journal of Solid-State Circuits, vol. 25, No. 2, Apr. 1990, pp. 584-594. [cited by applicant]
Simmons, John G., Generalized Formula for the Electric Tunnel Effect Between Similar Electrodes Separated by a Thin Insulating Film; Journal of Applied Physics, vol. 34, No. 6, Jun. 1963; pp. 1793-1803. [cited by applicant]
Stesmans et al., Si Dangling-Bond-Type Defects at the Interface of (100)Si with Ultrathin Layers of SiOx, Al2O3, and ZrO2; Applied Physics Letters, vol. 80, No. 11, Mar. 18, 2002; pp. 1957-1959. [cited by applicant]
Szydlo, et al., I-V and C-V Characteristics of Au/TiO2 Schottky Diodes; J. Appl. Phys. 51(6), Jun. 1980; pp. 3310-3312. [cited by applicant]
Zheng et al., Electronic Structure Differences in ZeO2 vs HfO2; J. Phys. Chem. A 2005, 109, pp. 11521-11525. [cited by applicant]
Moore, Administrative Patent Judge, “Judgement”, [cited by applicant]
McNamara, Administrative Patent Judge, “Judgement”, [cited by applicant]
Kenny, Administrative Patent Judge, “Decision”, [cited by applicant]
McNamara, Administrative Patent Judge, “Judgement”, [cited by applicant]
Zahn, D.R.T., et al., “Influence of Sb and Bi epitaxial monolayers on the metal/GaAs(110) interface formation,” Applied Surface Science, (1992), 56-58, pp. 228-232. [cited by applicant]
Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A1., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A2., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant to Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A3., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant to Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A4., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A6., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A7., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A8., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix A10., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B1., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B2., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B3., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B4., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B5., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B6., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B7., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B8., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix B10., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C1., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C2., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant to Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C3., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C4., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C5., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C6., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C7., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C8., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix C10., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D1., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D2., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D3., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D4., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D5., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D6., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D7., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D8., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix D10., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant to Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E1., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E2., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E3., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E4., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E5., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E6., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E7., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E8., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix E10., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F1., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F2., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F3., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F4., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F5., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F6., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F7., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F8., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
Appendix F10., Claim Chart, from Defendants' Preliminary Invalidity Contentions and Additional Disclosures Pursuant To Patent Local Rules dated May 19, 2020, [cited by applicant]
De Bosscher, et al., The influence of silicide formation on the barrier height of Ti/Si MIS Schottky barriers, Semiconductor Sci., Tech., vol. 1, 1986, pp. 376-382. [cited by applicant]
Defives, et al., Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC, Microelec. Eng'g, vol. 55, 2001, pp. 369-374. [cited by applicant]
Goodnick, et al., Effects of a thin SiO2 layer on the formation of metal-silicon contacts, Journal of Vacuum Sci. & Tech., vol. 18, No. 3, Apr. 1981, pp. 949-954. [cited by applicant]
Schmidt, et al., Increased dependence of Schottky barrier height on metal work functions due to a thin-oxide layer, Journal of Vacuum Sci. & Tech., vol. 6, No. 4, Jul./Aug. 1988, pp. 1436-1439. [cited by applicant]
Waldrop, et al., Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: Crystal face dependence, Applied Physics Letters, vol. 62, No. 21, May 24, 1993, pp. 2685-2687. [cited by applicant]
Office Action in Taiwan Patent Application No. 112112987, dated Oct. 5, 2023 (with accompanying translation), 14 pgs. [cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
[cited by applicant]
Exhibit A to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit B to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit C to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit D to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit E to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit F to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit G to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
Exhibit H to Expert Report of Dr. Jeffrey Bokor in [cited by applicant]
[cited by applicant]
Aboelfotoh, Schottky Barrier Heights of Refractory Metals on Silicon, Materials Research Soc., vol. 71, 1986, pp. 273-285. [cited by applicant]
Aboelfotoh, et al., Schottky-barrier heights of Ti and TiSi2 on n-type and p-type Si(100), Physical Review B, vol. 34, No. 4, Aug. 15, 1986, pp. 2311-2317. [cited by applicant]
Aboelfotoh, et al., Schottky-barrier height of a Ti-W alloy on n-type and p-type Si, Physical Review B, vol. 33, No. 10, May 15, 1986, pp. 6572-6578. [cited by applicant]
Aboelfotoh, Temperature Dependence of the Schottky-Barrier Height of Tungsten on n-Type and p-Type Silicon, Solid-State Elecs, vol. 34, No. 1, 1991, pp. 51-55. [cited by applicant]
Asamizu, et al., Formation Mechanism of Low Contact Resistance PdZn-Based Ohmic Contacts for p-type InP, Materials Transactions, vol. 43, No. 6, 2002, pp. 1352-1359. [cited by applicant]
Bard, et al., The Concept of Fermi Level Pinning at Semiconductor/Liquid Junctions, Consequences for Energy Conversion Efficiency and Selection of Useful Solution Redox Couples in Solar Devices, Journal of the Am. Chem.… [cited by applicant]
Beatty, Metallization Systems for Integrated Circuits, NASA Technical Note D-5866, Jul. 1970., 26 pgs. [cited by applicant]
Boswell, Low Resistance Gold Contacts for Gallium Nitride, Gold Bulletin, vol. 31, No. 4, 1998, pp. 132-133. [cited by applicant]
Calvet, Electrical Transport in Schottky Barrier MOSFETS, Dissertation, Yale Univ., May 2001, 183 pgs. [cited by applicant]
Campbell, et al., Titanium dioxide (TiO2 )-based gate insulators, IBM Journal of Research Development, vol. 43, No. 3, May 1999, pp. 383-392. [cited by applicant]
Card, et al., Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes, Journal of Applied. Physics, vol. 4, Jun. 1971, pp. 1589-1601. [cited by applicant]
Chang, et al., Specific Contact Resistance of Metal-Semiconductor Barriers, Solid-State Elecs., vol. 14, 1971, pp. 541-550. [cited by applicant]
Cheek, et al., MIS and SIS Silicon Solar Cells: A Review, Photovoltaic Solar Energy Conf., 1981, pp. 353-357. [cited by applicant]
Chen, et al., Band structure of Al/Si/n-type GaAs with a strained Si interfacial layer, Physical Review B, vol. 52, No. 7, Feb. 15, 1996, pp. 3879-3884. [cited by applicant]
Chen, et al., Properties of TiO2—GaAs Interface, Final Report on NASA Grant No. NSG 1202-S1, Jun. 1977, 100 pgs. [cited by applicant]
Chen, et al., The Use of Refractory Metal and Electron-Beam Sintering to Reduce Contact Resistance for VLSI, IEEE Trans. on Electron Devices, vol. ED-30, No. 11, Nov. 1983, pp. 1542-1550. [cited by applicant]
Chourasia, et al., X-ray photoelectron study of TiN/SiO2 and TiN/Si interfaces, Thin Solid Films, vol. 266, 1995, pp. 298-301. [cited by applicant]
Claflin, et al., Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers, Journal of Vacuum Sci., & Tech., vol. 16, No. 4, Jul./Aug. 1998, pp. 2154-2158. [cited by applicant]
Claflin, et al., Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with within dielectric layers, Journal of Vacuum Sci., & Tech., vol. 16, No. 3, May/Jun. 1998, pp. 1757-1761. [cited by applicant]
Clarke, et al., Non-Equilibrium Effects on Metal-Oxide-Semiconductor Tunnel Currents, Solid-State Elecs., vol. 14, 1971, pp. 957-973. [cited by applicant]
Cohen, et al., Chapter 6: Practical Ohmic Contacts to Silicon, VLSI Electronics Microstructure Sci., vol. 13, 1986, pp. 213-310. [cited by applicant]
Connelly, et al., Speed Advantage of Optimized Metal S/D in 25 nm Dual-Gate Fully-Depleted CMOS, 60th DRC Conf. Digest Device Research Conf., 2002, pp. 1-2. [cited by applicant]
Costa, et al., Unpinned GaAs Schottky barriers with an epitaxial silicon layer, Journal of Applied Physics, vol. 70, No. 4, Aug. 15, 1991. pp. 2173-2184. [cited by applicant]
Cowley, Titanium-Silicon Schottky Barrier Diodes, Solid-State Elecs., vol. 12, 1970, pp. 403-414. [cited by applicant]
Davis, et al., Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts, Semiannual Technical Report, Jun. 1995, 32 pgs. [cited by applicant]
Depas, et al., Electrical Characteristics of A1/SiO2/n-Si Tunnel Diodes with an Oxide Layer Grown by Rapid Thermal Oxidation, Solid-State Elecs., vol. 37, No. 3, 1994, pp. 433-441. [cited by applicant]
D'Heurle, Interfaces in Silicides, Journal de Physique IV Colloque, vol. 6, Mar. 1996, pp. C2-29-C2-46. [cited by applicant]