Display device, method of manufacturing display device, and driving method of display device
A display device includes a first layer disposed on a base layer and including a first gate electrode, a first gate insulating layer, and an active layer, and a second layer disposed on the first layer and including a second gate electrode, a second gate insulating layer, and the active layer. The first layer and the second layer share the active layer. The first gate insulating layer has a first dielectric constant, and the second gate insulating layer has a second dielectric constant. The first dielectric constant and the second dielectric constant are different from each other.
1 . A display device comprising:
a first layer disposed on a base layer and including a first gate electrode, a first gate insulating layer, and an active layer; and
a second layer disposed on the first layer and including a second gate electrode, a second gate insulating layer, and the active layer, wherein
the first layer and the second layer share the active layer,
the first gate insulating layer has a first dielectric constant,
the second gate insulating layer has a second dielectric constant, and
the first dielectric constant and the second dielectric constant are different from each other.
2 . The display device of claim 1 , wherein
one of the first dielectric constant and the second dielectric constant is equal to or greater than about 7, and
another one of the first dielectric constant and the second dielectric constant is less than about 7.
3 . The display device of claim 2 , wherein
the first gate insulating layer and the second gate insulating layer include different materials from each other,
one of the first gate insulating layer and the second gate insulating layer includes at least one of zirconium oxide (Zr x O y ), hafnium oxide (Hf x O y ), yttrium oxide (Y x O y ), strontium oxide (Sr x O y ), lanthanum oxide (La 2 O 3 ), barium oxide (Ba x O y ), tantalum oxide (Ta x O y ), and titanium oxide (Ti x O y ), and
another one of the first gate insulating layer and the second gate insulating layer includes at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ).
4 . The display device of claim 2 , further comprising:
an electrode including a first electrode and a second electrode and disposed on the second gate insulating layer,
wherein the electrode is electrically connected to the active layer by penetrating the second gate insulating layer.
5 . The display device of claim 2 , further comprising:
an auxiliary electrode layer disposed on the base layer; and
a contact part penetrating the first gate insulating layer,
wherein the auxiliary electrode layer is electrically connected to the active layer through the contact part.
6 . The display device of claim 2 , wherein
the first gate insulating layer has a first thickness in a thickness direction of the base layer,
the second gate insulating layer has a second thickness in the thickness direction, and
the first thickness and the second thickness are same.
7 . The display device of claim 2 , wherein
the first gate insulating layer has a first thickness in a thickness direction of the base layer,
the second gate insulating layer has a second thickness in the thickness direction, and
the first thickness and the second thickness are different from each other.
8 . The display device of claim 1 ,
further comprising:
a pixel circuit formed on the base layer and including a driving transistor and a switching transistor; and
a light emitting element electrically connected to the pixel circuit, wherein
the switching transistor includes the active layer, the first gate electrode, and the second gate electrode.
9 . The display device of claim 1 , further comprising:
a pixel circuit formed on the base layer and including a driving transistor and a switching transistor; and
a light emitting element electrically connected to the pixel circuit, wherein
the switching transistor includes the active layer, the first gate electrode, and the second gate electrode,
the switching transistor is operated in one of a first driving mode and a second driving mode,
in the first driving mode, the switching transistor is operated by supplying a first gate signal to the first gate electrode, and
in the second driving mode, the switching transistor is operated by supplying a second gate signal to the second gate electrode.
10 . The display device of claim 9 , wherein
the first dielectric constant is greater than the second dielectric constant,
the switching transistor is operated in the first driving mode in case that one of the first gate signal and the second gate signal having a first driving frequency equal to or greater than a predetermined frequency is applied to the switching transistor, and
the switching transistor is operated in the second driving mode in case that another one of the first gate signal and the second gate signal having a second driving frequency less than the predetermined frequency is applied to the switching transistor.
11 . The display device of claim 9 , wherein
the first dielectric constant is less than the second dielectric constant,
the switching transistor is operated in the first driving mode in case that one of the first gate signal and the second gate signal having a first driving frequency less than a predetermined frequency is applied to the switching transistor, and
the switching transistor is operated in the second driving mode in case that another one of the first gate signal and the second gate signal having a second driving frequency equal to or greater than the predetermined frequency is applied to the switching transistor.
12 . The display device of claim 10 , wherein, in case that the switching transistor is operated in the first driving mode,
the first gate signal is applied to the first gate electrode, and
the second gate signal is not applied to the second gate electrode.
13 . The display device of claim 11 , wherein the predetermined frequency is about 60 Hz.
14 . A method of manufacturing a display device, the method comprising:
forming a first gate electrode and a first gate insulating layer on a base layer;
forming an active layer on the first gate insulating layer; and
forming a second gate insulating layer and a second gate electrode on the active layer, wherein
the first gate insulating layer has a first dielectric constant,
the second gate insulating layer has a second dielectric constant,
one of the first dielectric constant and the second dielectric constant is equal to or greater than to about 7, and
another one of the first dielectric constant and the second dielectric constant is less than about 7.
15 . The method of claim 14 , further comprising:
forming a first electrode and a second electrode on the second gate insulating layer,
wherein the first electrode and the second electrode are electrically connected to the active layer by penetrating the second gate insulating layer.
16 . The method of claim 14 , further comprising:
forming an auxiliary electrode layer on the base layer; and
forming a first electrode and a second electrode penetrating the first gate insulating layer, wherein
the first electrode and the second electrode are electrically connected to the active layer by penetrating the first gate insulating layer, and
the forming of the first electrode and the second electrode includes performing a heat treatment process.
17 . The method of claim 14 , further comprising:
providing a pixel circuit formed on the base layer and including a driving transistor and a switching transistor; and
providing a light emitting element electrically connected to the pixel circuit, wherein
the switching transistor includes the active layer, the first gate electrode, and the second gate electrode.
18 . A method of driving a display device, wherein
the display device includes:
a driving transistor and a switching transistor on a base layer, the switching transistor includes:
a first layer disposed on the base layer and including a first gate electrode, a first gate insulating layer, and an active layer; and
a second layer disposed on the first layer and including a second gate electrode, a second gate insulating layer, and the active layer,
the first layer and the second layer share the active layer,
the first gate insulating layer has a first dielectric constant,
the second gate insulating layer has a second dielectric constant, and
the first dielectric constant and the second dielectric constant are different from each other,
wherein the method includes a first driving mode and a second driving mode,
in the first driving mode, the switching transistor is operated based on a first gate signal supplied to the first gate electrode, and
in the second driving mode, the switching transistor is operated based on a second gate signal supplied to the second gate electrode.
19 . The method of claim 18 , wherein
the first dielectric constant is greater than the second dielectric constant,
in the first driving mode, the switching transistor is operated in case that one of the first gate signal and the second gate signal having a first driving frequency equal to or greater than a predetermined frequency is applied to the switching transistor, and
in the second driving mode, the switching transistor is operated in case that another one of the first gate signal and the second gate signal having a second driving frequency less than the predetermined frequency is applied to the switching transistor.
20 . The method of claim 18 , wherein
the first dielectric constant is less than the second dielectric constant,
in the first driving mode, the switching transistor is operated in case that one of the first gate signal and the second gate signal having a first driving frequency less than a predetermined frequency is applied to the switching transistor, and
in the second driving mode, the switching transistor is operated in case that another one of the first gate signal and the second gate signal having a second driving frequency equal to or greater than the predetermined frequency is applied to the switching transistor.