IP Library › Granted Patent US 12,448,686
Granted Patent B2
US 12,448,686 · App. 18/550,190 · Granted Oct 21, 2025

Reducing line bending during metal fill process

Inventors: Anand Chandrashekar (Fremont, CA); Lei Guo (San Jose, CA); Gang L. Liu (Fremont, CA); Sanjay Gopinath (Fremont, CA)
Assignee: Lam Research Corporation
C23C16/45527C23C16/06C23C16/45553
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,448,686
App. No.
18/550,190
Granted
Oct 21, 2025
Kind
B2
Abstract

Methods of mitigating line bending during feature fill include deposition of a nucleation layer having increased roughness. In some embodiments, the methods include depositing two or more metal nucleation layers.

Claims (26)

1. A method comprising:

providing a substrate having a plurality of features spaced apart, each feature having a feature opening width, wherein the width of the feature narrows from the top of the feature to the bottom of the feature;

depositing a first conformal metal nucleation layer in the plurality of features; and

depositing a second conformal metal nucleation layer on the first conformal metal nucleation layer, wherein one or more of the following is different during deposition of the first conformal metal nucleation layer than during deposition of the second conformal metal nucleation layer: a) reducing agent chemistry, b) metal precursor and reducing agent flow sequence, c) metal precursor and reducing agent flow duration, d) purge conditions, e) chamber pressure, and f) substrate temperature.

2. The method of claim 1 , wherein the width of the bottom of each feature is between 0 nm and 90% of the width at the top of the feature.

3. The method of claim 1 , wherein the metal is selected from the group consisting of tungsten, ruthenium, molybdenum, and cobalt.

4. The method of claim 1 , wherein the first conformal metal nucleation layer is thicker than the second conformal metal nucleation layer.

5. The method of claim 1 , wherein diborane is the reducing agent during deposition of the first metal nucleation layer and not during deposition of the second metal nucleation layer.

6. The method of claim 1 , wherein a metal precursor and a reducing agent are co-flowed during deposition of the first metal nucleation layer and wherein a metal precursor and a reducing agent are alternately pulsed during deposition of the second metal nucleation layer.

7. The method of claim 1 , wherein a pulse duration of the metal precursor is longer during deposition of the first metal nucleation layer than during deposition of the second metal nucleation layer.

8. The method of claim 1 , wherein a purge gas is continuously flowed during deposition of the first metal nucleation layer and pulsed during deposition of the second metal nucleation layer.

9. The method of claim 8 , wherein pulsing the purge gas comprises using one or more purge gas accumulators.

10. The method of claim 1 , wherein a chamber pressure housing the substrate is higher during deposition of the first metal nucleation layer than during deposition of the second metal nucleation layer.

11. The method of claim 1 , wherein a substrate temperature is higher during deposition of the first metal nucleation layer than during deposition of the second metal nucleation layer.

12. The method of claim 1 , wherein the features are spaced apart with a pitch of between about 10 nm and 60 nm between adjacent features.

13. The method of claim 1 , further comprising depositing a third conformal metal nucleation layer on the second conformal metal nucleation layer.

14. The method of claim 1 , wherein the first nucleation layer thickness is between about 1 nm to 2 nm.

15. The method of claim 1 , wherein the second nucleation layer thickness is between about 0.5 nm to 1 nm.

16. A method comprising:

providing a substrate having a plurality of features spaced apart, each feature having a feature opening width, wherein the width of the feature narrows from the top of the feature to the bottom of the feature;

depositing a first conformal metal nucleation layer in the plurality of features under supersaturated conditions by exposing the feature to alternating doses of a reducing agent and a metal precursor, wherein each of the reducing agent doses is at least ¼ liter and at least 10 seconds in duration.

17. The method of claim 16 , further comprising depositing a second conformal nucleation layer on the first conformal nucleation layer.

18. The method of claim 16 , further comprising depositing bulk metal directly on the first conformal metal nucleation layer to fill the features with metal.

19. The method of claim 16 , further comprising exposing the first conformal nucleation layer to a nitrogen-containing inhibition chemistry to inhibit nucleation in the plurality of features.

20. The method of claim 19 , wherein nucleation is inhibited throughout the plurality of features including at the bottom of the features.

21. The method of claim 19 , wherein nucleation is inhibited preferentially at the top of the features.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2023
From: CHANDRASHEKAR, ANAND; GUO, LEI; LIU, GANG; GOPINATH, SANJAY
To: LAM RESEARCH CORPORATION
Reel/Frame 065125/0568 →
Continuity (2)
Provisional Application 63200564 · Mar 15, 2021
Related Publication 20240158913A1 · May 16, 2024
References Cited (58)
US 5804249A · Sukharev et al. · 1998 [cited by applicant]
US 6037252A · Hillman et al. · 2000 [cited by applicant]
US 6399490B1 · Jammy et al. · 2002 [cited by applicant]
US 8614106B2 · Lavoie et al. · 2013 [cited by applicant]
US 10573522B2 · Jandl et al. · 2020 [cited by applicant]
US 12173399B2 · Chandrashekar et al. · 2024 [cited by applicant]
US 20070066060A1 · Wang · 2007 [cited by applicant]
US 20070080459A1 · Seok · 2007 [cited by applicant]
US 20080011228A1 · Inoue et al. · 2008 [cited by applicant]
US 20080280438A1 · Lai et al. · 2008 [cited by applicant]
US 20090277867A1 · Mayer et al. · 2009 [cited by applicant]
US 20090280649A1 · Mayer et al. · 2009 [cited by applicant]
US 20110221044A1 · Danek et al. · 2011 [cited by applicant]
US 20120107503A1 · Abelson et al. · 2012 [cited by applicant]
US 20120153381A1 · Song · 2012 [cited by applicant]
US 20120187305A1 · Elam et al. · 2012 [cited by applicant]
US 20140106083A1 · Wu et al. · 2014 [cited by applicant]
US 20140187038A1 · Collins et al. · 2014 [cited by applicant]
US 20140231896A1 · Matsumori et al. · 2014 [cited by applicant]
US 20140264932A1 · Ting et al. · 2014 [cited by applicant]
US 20150299886A1 · Doubina et al. · 2015 [cited by applicant]
US 20160172211A1 · Demos et al. · 2016 [cited by applicant]
US 20170125548A1 · Hung et al. · 2017 [cited by applicant]
US 20170194204A1 · Sowa · 2017 [cited by applicant]
US 20170229341A1 · Chang et al. · 2017 [cited by applicant]
US 20170365513A1 · Yang et al. · 2017 [cited by applicant]
US 20180053660A1 · Jandl · 2018 [cited by examiner]
US 20200303409A1 · Lim et al. · 2020 [cited by applicant]
US 20220349048A1 · Chandrashekar et al. · 2022 [cited by applicant]
US 20250066907A1 · Chandrashekar et al. · 2025 [cited by applicant]
JP 2002544657A · 2002 [cited by applicant]
KR 20070035250A · 2007 [cited by applicant]
KR 20120068401A · 2012 [cited by applicant]
WO WO2015145750A1 · 2015 [cited by applicant]
International Preliminary Report on Patentability dated Mar. 3, 2022, in Application No. PCT/US2020/070429. [cited by applicant]
International Preliminary Report on Patentability dated Sep. 28, 2023, in PCT Application No. PCT/US2022/019195. [cited by applicant]
International Search Report and Written Opinion dated Jun. 17, 2022, in PCT Application No. PCT/US2022/019195. [cited by applicant]
International Search Report and Written Opinion dated Nov. 30, 2020, in application No. PCT/US2020/070429. [cited by applicant]
Corrected Notice of Allowance dated Feb. 16, 2022, in U.S. Appl. No. 16/724,231. [cited by applicant]
Corrected Notice of Allowance dated May 11, 2022, in U.S. Appl. No. 16/724,231. [cited by applicant]
Final Office Action dated Jun. 10, 2019 issued in U.S. Appl. No. 15/673,320. [cited by applicant]
Final Office Action dated Mar. 29, 2021 issued in U.S. Appl. No. 16/724,231. [cited by applicant]
Final Office Action dated Oct. 23, 2023 in U.S. Appl. No. 17/634,067. [cited by applicant]
Non-Final Office Action dated Apr. 13, 2023 in U.S. Appl. No. 17/634,067. [cited by applicant]
Notice of Allowance dated Feb. 2, 2022 in U.S. Appl. No. 16/724,231. [cited by applicant]
Notice of Allowance dated Sep. 26, 2019 issued in U.S. Appl. No. 15/673,320. [cited by applicant]
Notice of allowance dated Sep. 29, 2021 issued in U.S. Appl. No. 16/724,231. [cited by applicant]
Office Action dated Dec. 21, 2018 issued in U.S. Appl. No. 15/673,320. [cited by applicant]
Office Action dated Sep. 22, 2020 issued in U.S. Appl. No. 16/724,231. [cited by applicant]
JP Office Action dated Jul. 9, 2024 in JP Application No. 2022-510890, with English Translation. [cited by applicant]
KR Office Action dated Dec. 9, 2024 in KR Application No. 10-2022-7009027, with English Translation. [cited by applicant]
SG Search Report and Written Opinion dated May 28, 2024 in SG Application No. 11202201606P. [cited by applicant]
Corrected Notice of Allowance dated Oct. 30, 2024 in U.S. Appl. No. 17/634,067. [cited by applicant]
Non-Final Office Action dated Mar. 14, 2024 in U.S. Appl. No. 17/634,067. [cited by applicant]
Notice of Allowance dated Aug. 7, 2024 in U.S. Appl. No. 17/634,067. [cited by applicant]
Notice of Allowance dated Sep. 16, 2024 in U.S. Appl. No. 17/634,067. [cited by applicant]
U.S. Appl. No. 18/940,814, inventors Chandrashekar A, et al., filed on Nov. 7, 2024. [cited by applicant]
JP Office Action dated Jan. 7, 2025 in JP Application No. 2022-510890, with English Translation. [cited by applicant]