Semiconductor device
A semiconductor device includes a protection circuit electrically connected to a first interconnection and a second interconnection, a first voltage and a second voltage supplied to the first interconnection and the second interconnection, respectively. The protection circuit includes: a first resistor connected between the first interconnection and a first node; a first capacitor connected between the second interconnection and the first node; a second resistor connected between the second interconnection and a second node located; a second capacitor connected between the second interconnection and the second node, and connected in parallel to the second resistor; a third resistor connected between the first interconnection and a third node; and a third capacitor connected between the second interconnection and the third node.
1 . A semiconductor device comprising:
a protection circuit electrically connected to a first interconnection and a second interconnection, a first voltage and a second voltage supplied to the first interconnection and the second interconnection, respectively,
wherein the protection circuit includes:
a first resistor connected between the first interconnection and a first node;
a first capacitor connected between the second interconnection and the first node;
a second resistor connected between the second interconnection and a second node;
a second capacitor connected between the second interconnection and the second node, the second capacitor being connected in parallel to the second resistor;
a third resistor connected between the first interconnection and a third node; and
a third capacitor connected between the second interconnection and the third node.
2 . The semiconductor device according to claim 1 , wherein
the second resistor and the second capacitor form a second RC circuit,
the third resistor and the third capacitor form a third RC circuit, and
the second RC circuit has a time constant larger than a time constant of the third RC circuit.
3 . The semiconductor device according to claim 1 , wherein the first resistor and the first capacitor form a first RC circuit, the first RC circuit having a time constant that is lower than a startup speed of the first voltage upon power-on.
4 . The semiconductor device according to claim 1 , wherein
the protection circuit further includes a first transistor with a gate electrically connected to the second node, and the first transistor is connected between the second interconnection and the third node, and
the first transistor is an n-type MOSFET.
5 . The semiconductor device according to claim 1 , wherein the protection circuit further includes a second transistor with a gate electrically connected to a fourth node, and the second transistor is connected between the first interconnection and the second interconnection.
6 . The semiconductor device according to claim 1 , further comprising:
a fourth resistor connected between the second interconnection and a fourth node.
7 . The semiconductor device according to claim 1 , wherein the protection circuit further includes a fourth capacitor connected between the first interconnection and a fourth node.
8 . The semiconductor device according to claim 1 , wherein the protection circuit further includes:
a fifth resistor connected between the second interconnection and the first capacitor; and
a third transistor with a gate electrically connected to a fourth node, and the third transistor is connected between the second interconnection and the first capacitor and connected in parallel to the fifth resistor.
9 . The semiconductor device according to claim 1 , wherein the protection circuit further includes a fourth transistor with a gate electrically connected to the third node, and the fourth transistor is connected between the second interconnection and the second node.
10 . The semiconductor device according to claim 1 , wherein the protection circuit further includes a fifth transistor with a gate electrically connected to a fourth node, and the fifth transistor is connected between the first interconnection and the third node.
11 . The semiconductor device according to claim 1 , wherein the protection circuit further includes:
a sixth transistor with a gate electrically connected to the second node, and the sixth transistor is connected between the second interconnection and the third node;
a seventh transistor with a gate electrically connected to the second node, and the seventh transistor is connected between the third node and the sixth transistor; and
an eighth transistor with a gate electrically connected to a fourth node, and the eighth transistor is connected between the second interconnection and the seventh transistor and connected in parallel to the sixth transistor,
wherein a threshold voltage of the seventh transistor is lower than a threshold voltage of the sixth transistor.
12 . The semiconductor device according to claim 1 , wherein the protection circuit further includes:
a ninth transistor with a gate electrically connected to the second node, and the ninth transistor is connected between the second interconnection and the third node;
a tenth transistor with a gate electrically connected to a fifth node, is the tenth transistor is connected between the second interconnection and the third node and connected in parallel to the ninth transistor;
an eleventh transistor with a gate electrically connected to the first node, and the eleventh transistor is connected between the first interconnection and the fifth node; and
a twelfth transistor with a gate electrically connected to the first interconnection, and the twelfth transistor is connected between the second node and the fifth node.
13 . The semiconductor device according to claim 12 , wherein the protection circuit further has:
a thirteenth transistor with a gate configured to receive a third voltage higher than the first voltage, and the thirteenth transistor is connected between the second node and the fifth node and connected in parallel to the twelfth transistor.
14 . The semiconductor device according to claim 1 , wherein the second resistor includes a plurality of depletion type n-type MOSFETs connected in series.
15 . The semiconductor device according to claim 1 , wherein
the first voltage is about 0.4 V to 0.6 V, and
the second voltage is a ground voltage.
16 . The semiconductor device according to claim 1 , wherein
the first voltage is about 0.6 V to 1.2 V, and
the second voltage is a ground voltage.
17 . The semiconductor device according to claim 1 , wherein the first voltage is higher than the second voltage.
18 . The semiconductor device according to claim 1 , further comprising:
a fourteenth transistor with a gate electrically connected to the first node, and the fourteenth transistor is connected between the first interconnection and the second node.
19 . The semiconductor device according to claim 1 , further comprising:
a fifteenth transistor with a gate electrically connected to the third node, and the fifteenth transistor is connected between the second interconnection and a fourth node located; and
a sixteenth transistor with a gate electrically connected to the third node, and the sixteenth transistor is connected between the first interconnection and the fourth node.
20 . The semiconductor device according to claim 1 , further comprising:
a diode having a cathode electrically connected to the first interconnection and an anode electrically connected to the second interconnection.