Isolation structures in multi-gate semiconductor devices and methods of fabricating the same
A semiconductor structure includes a substrate, an oxide layer disposed over the substrate, a stack of semiconductor layers disposed over the oxide layer, and an epitaxial source/drain (S/D) feature disposed adjacent to the stack of semiconductor layers. A portion of the epitaxial S/D feature is horizontally surrounded by the oxide layer.
1. A semiconductor structure, comprising:
a substrate;
an oxide layer disposed over the substrate;
a stack of semiconductor layers disposed over the oxide layer; and
an epitaxial source/drain (S/D) feature disposed adjacent to the stack of semiconductor layers, wherein a portion of the epitaxial S/D feature is horizontally surrounded by the oxide layer,
wherein the oxide layer has a concave top surface interfacing with the epitaxial S/D feature.
2. The semiconductor structure of claim 1 , wherein the oxide layer includes silicon, germanium, or a combination thereof.
3. The semiconductor structure of claim 1 , wherein a bottom surface of the portion of the epitaxial S/D feature is defined by the oxide layer.
4. The semiconductor structure of claim 1 , wherein the epitaxial S/D feature is a first epitaxial S/D feature, the semiconductor structure further comprising a second epitaxial S/D feature disposed adjacent to the stack of semiconductor layers and over the oxide layer, wherein the oxide layer extends between the first epitaxial S/D feature and the second epitaxial S/D feature.
5. The semiconductor structure of claim 1 , wherein the epitaxial S/D feature is disposed over a portion of a bottommost semiconductor layer of the stack of semiconductor layers,
wherein the portion of the bottommost semiconductor layer of the stack of semiconductor layers is in direct contact with the oxide layer.
6. The semiconductor structure of claim 1 , wherein the substrate includes elemental silicon and the oxide layer includes silicon oxide.
7. A semiconductor structure, comprising:
a first semiconductor layer;
an oxide layer disposed over the first semiconductor layer;
a second semiconductor layer disposed over the oxide layer; and
an epitaxial source/drain (S/D) feature disposed over and in contact with a portion of the oxide layer and an inclined surface of the second semiconductor layer.
8. The semiconductor structure of claim 7 , wherein the first semiconductor layer and the second semiconductor layer include elemental silicon, and
wherein the oxide layer includes germanium.
9. The semiconductor structure of claim 7 , wherein a portion of the epitaxial S/D feature extends into the oxide layer.
10. The semiconductor structure of claim 7 , wherein a first concentration of oxygen at an interface of the oxide layer and the second semiconductor layer is greater than a second concentration of oxygen at a position in the oxide layer and apart from the interface.
11. The semiconductor structure of claim 7 , further comprising a metal gate structure disposed over the second semiconductor layer,
wherein the portion of the oxide layer has a concave surface.
12. The semiconductor structure of claim 7 , further comprising a stack of semiconductor layers over the second semiconductor layer,
wherein a thickness of the second semiconductor layer directly below the stack of semiconductor layers is greater than a thickness of the second semiconductor layer directly below the epitaxial S/D feature.
13. A method, comprising:
providing a semiconductor substrate;
performing an implantation process to form an oxygen-rich region in the semiconductor substrate;
performing an annealing process to the oxygen-rich region, thereby converting the oxygen-rich region to an oxide layer in the semiconductor substrate;
forming a stack of semiconductor layers over the semiconductor substrate;
forming a dummy gate stack over the stack of semiconductor layers;
forming a source/drain recess in the stack of semiconductor layers and the oxide layer; and
forming a source/drain (S/D) feature in the source/drain recess.
14. The method of claim 13 , further comprising forming a protective layer over the semiconductor substrate before performing the implantation process and removing the protective layer after performing the annealing process.
15. The method of claim 14 , wherein forming the protective layer includes oxidizing a top portion of the semiconductor substrate.
16. The method of claim 13 , wherein the oxygen-rich region includes silicon, germanium, or a combination thereof.
17. The method of claim 13 , wherein the semiconductor substrate includes a first semiconductor layer, a germanium-containing layer over the first semiconductor layer, and a second semiconductor layer over the germanium-containing layer.
18. The method of claim 13 , before performing the annealing process, further comprising forming a silicon germanium layer over the semiconductor substrate.
19. The method of claim 18 , wherein the stack of semiconductor layers is formed over the silicon germanium layer, and
wherein the method further comprises replacing the dummy gate stack and the silicon germanium layer with a metal gate stack.
20. The method of claim 13 , wherein the oxygen-rich region is buried in the semiconductor substrate.