Granted Patent B2

US 12,481,438 · App. 18/624,395 · Granted Nov 25, 2025

Inventors: Dinesh Kumar Agarwal (Bangalore, IN); Sunny Sharan (Bangalore, IN)

Assignee: Sandisk Technologies, Inc.

G06F3/0631G06F3/0604G06F3/0679

Abstract

Claims (30)

1 . A data storage device comprising:

a memory; and

one or more processors, individually or in combination, configured to:

receive information from a host regarding an incoming write workload of a burst operation, wherein the information comprises a number of read operations and a number of write operations in a window of time, and wherein a size of the window is dynamically adjustable; and

dynamically adjust an amount of the memory configured as single-level cell (SLC) memory versus multi-level cell (MLC) memory based on the information to accommodate the burst operation.

2 . The data storage device of claim 1 , wherein the window comprises a sliding window.

3 . The data storage device of claim 1 , wherein the information comprises an indication of an affinity toward reads versus writes.

4 . The data storage device of claim 3 , wherein the one or more processors, individually or in combination, are further configured move data from the SLC memory to the MLC memory in response to an indication of an affinity towards writes.

5 . The data storage device of claim 3 , wherein the one or more processors, individually or in combination, are further configured move data from the MLC memory to the SLC memory in response to an indication of an affinity towards reads.

6 . The data storage device of claim 1 , wherein the information is received from the host after the data storage device confirms, with the host, that the data storage device supports dynamic window sizing and hybrid adjustment.

7 . The data storage device of claim 1 , wherein an amount of hybrid space in the memory is a function of an affinity towards reads verses writes, an amount of SLC reads, and an amount of SLC writes.

8 . The data storage device of claim 1 , wherein the MLC memory comprises triple-level cell (TLC) memory.

9 . The data storage device of claim 1 , wherein the MLC memory comprises quad-level cell (QLC) memory.

10 . The data storage device of claim 1 , wherein the memory comprises a three-dimensional memory.

11 . A method comprising:

performing in a data storage device comprising a memory:

determining whether a host is exhibiting, over a window of time, an affinity toward writes or an affinity toward reads;

in response to determining that the host is exhibiting an affinity toward writes, moving data from a single-level cell (SLC) block of the memory to a multi-level cell (MLC) block of the memory; and

in response to determining that the host is exhibiting an affinity toward reads, moving data from the MLC block of the memory to the SLC block of the memory:

wherein an amount of hybrid space in the memory is a function of the affinity towards reads verses writes, an amount of SLC reads, and an amount of SLC writes.

12 . The method of claim 11 , further comprising dynamically adjusting a size of the window.

13 . The method of claim 11 , wherein the window comprises a sliding window.

14 . The method of claim 11 , wherein the MLC block of the memory comprises triple-level cell (TLC) memory.

15 . The method of claim 11 , wherein the MLC block of the memory comprises quad-level cell (QLC) memory.

16 . The method of claim 11 , wherein the memory comprises a three-dimensional memory.

17 . A data storage device comprising:

a memory; and

means for:

receiving information from a host regarding an incoming write workload of a burst operation, wherein the information is received from the host after the data storage device confirms, with the host that the data storage device supports dynamic window sizing and hybrid adjustment; and

dynamically adjusting an amount of the memory configured as single-level cell (SLC) memory versus multi-level cell (MLC) memory based on the information to accommodate the burst operation.

Assignments (4)

Continuity (1)

References Cited (23)