Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus
A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
1. A semiconductor device, comprising:
a semiconductor substrate having a light incident side and a second side opposite to the light incident side;
a semiconductor element disposed on the light incident side of the semiconductor substrate;
an amplifier transistor, wherein a gate electrode of the amplifier transistor is disposed on the second side of the semiconductor substrate; and
a drain region of the amplifier transistor disposed on the light incident side of the semiconductor substrate, wherein a power supply potential VDD is applied to the drain region from a power supply line via a wire.
2. The semiconductor device according to claim 1 , wherein a diffusion layer is a drain of a selection transistor.
3. The semiconductor device according to claim 1 , wherein the gate electrode comprises a through-electrode.
4. The semiconductor device according to claim 3 , wherein the through-electrode is disposed through the semiconductor substrate in a depth direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to the second side of the semiconductor substrate.
5. The semiconductor device according to claim 3 , wherein the through-electrode is composed of a conductor that penetrates the semiconductor substrate and a separation layer that electrically separates the conductor and the semiconductor substrate.
6. The semiconductor device according to claim 5 , wherein the conductor includes at least one layer in a length direction and is formed of at least one type of electric conductor material.
7. The semiconductor device according to claim 1 , wherein the semiconductor element comprises a photoelectric conversion film sandwiched between two transparent electrodes.
8. The semiconductor device according to claim 1 , wherein an insulating film is between the semiconductor element and the semiconductor substrate.
9. An electronic apparatus, comprising:
a solid-state imaging device including:
a semiconductor substrate having a light incident side and a second side opposite to the light incident side;
a semiconductor element disposed on the light incident side of the semiconductor substrate;
an amplifier transistor, wherein a gate electrode of the amplifier transistor is disposed on the second side of the semiconductor substrate; and
a drain region of the amplifier transistor disposed on the light incident side of the semiconductor substrate, wherein a power supply potential VDD is applied to the drain region from a power supply line via a wire.
10. The electronic apparatus according to claim 9 , wherein the gate electrode comprises a through electrode, and wherein the through-electrode is disposed through the semiconductor substrate in a depth direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to the second side of the semiconductor substrate.
11. The electronic apparatus according to claim 10 , wherein the through-electrode is composed of a conductor that penetrates the semiconductor substrate and a separation layer that electrically separates the conductor and the semiconductor substrate.
12. The electronic apparatus according to claim 9 , wherein the semiconductor element comprises a photoelectric conversion film sandwiched between two transparent electrodes.
13. The electronic apparatus according to claim 9 , wherein an insulating film is between the semiconductor element and the semiconductor substrate.
14. A solid-state imaging device including:
a semiconductor substrate having a light incident side and a second side opposite to the light incident side;
a semiconductor element disposed on the light incident side of the semiconductor substrate;
an amplifier transistor, wherein a gate electrode of the amplifier transistor is disposed on the second side of the semiconductor substrate; and
a drain region of the amplifier transistor disposed on the light incident side of the semiconductor substrate, wherein a power supply potential VDD is applied to the drain region from a power supply line via a wire.
15. The solid-state imaging device according to claim 14 , wherein the gate electrode comprises a through-electrode, and wherein the through-electrode is disposed through the semiconductor substrate in a depth direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to the second side of the semiconductor substrate.
16. The solid-state imaging device according to claim 14 , wherein a diffusion layer is a drain of a selection transistor.
17. The solid-state imaging device according to claim 15 , wherein the through-electrode is composed of a conductor that penetrates the semiconductor substrate and a separation layer that electrically separates the conductor and the semiconductor substrate.
18. The solid-state imaging device according to claim 17 , wherein the conductor includes at least one layer in a length direction and is formed of at least one type of electric conductor material.
19. The solid-state imaging device according to claim 14 , wherein the semiconductor element comprises a photoelectric conversion film sandwiched between two transparent electrodes.
20. The solid-state imaging device according to claim 14 , wherein an insulating film is between the semiconductor element and the semiconductor substrate.