Solar cell, method for preparing solar cell, and photovoltaic module
A solar cell is provided, including a substrate having a first surface and a second surface, the first surface having a textured structure including protrusion structures, at least one doped semiconductor layer each formed over one of the first surface and the second surface, at least one passivation film each formed on a respective doped semiconductor layer, and electrodes penetrating a respective passivation film to be in electrical contact with the respective doped semiconductor layer. Each doped semiconductor layer has a surface facing away from the substrate and provided with recesses, and each recess has a size that is smaller than a size of any of the protrusion structures. Each passivation film has at least one portion formed in at least one of the recesses, and each electrode has at least one portion formed in at least one of the recesses.
1 . A solar cell, comprising:
a substrate having a first surface and a second surface opposite to each other, wherein the first surface has a textured structure, and the textured structure includes protrusion structures;
at least one doped semiconductor layer each formed over one of the first surface and the second surface, wherein the at least one doped semiconductor layer has a surface facing away from the substrate and provided with recesses, and each of the recesses has a size that is smaller than a size of any of the protrusion structures;
at least one passivation film, a respective passivation film of the at least one passivation film being formed on a respective doped semiconductor layer of the at least one doped semiconductor layer and having at least one portion formed in at least one of the recesses of the respective doped semiconductor layer; and
electrodes penetrating the respective passivation film to be in electrical contact with the respective doped semiconductor layer, wherein the electrodes have at least one portion formed in at least one of the recesses of the respective doped semiconductor layer.
2 . The solar cell according to claim 1 , wherein the recesses have orthographic projections on one of the first surface and the second surface, the orthographic projections having a first area, and the surface of the doped semiconductor layer has an orthographic projection on one of the first surface and the second surface, the orthographic projection having a second area;
and wherein the first area and the second area has a ratio in a range of 5% to 80%.
3 . The solar cell according to claim 1 , wherein the respective doped semiconductor layer has a material including polysilicon, monocrystalline silicon, nanocrystalline silicon, amorphous silicon, or microcrystalline silicon.
4 . The solar cell according to claim 1 , wherein the respective doped semiconductor layer has a thickness in a range of 10 nm to 200 nm.
5 . The solar cell according to claim 4 , wherein the size of each of the recesses includes a one-dimensional size of an orthographic projection of each of the recesses on a surface of the respective doped semiconductor layer facing the substrate, and the one-dimensional size is in a range of 5 nm to 100 nm.
6 . The solar cell according to claim 4 , wherein each of the recesses has a depth in a range of 5 nm to 100 nm.
7 . The solar cell according to claim 1 , wherein the doped semiconductor layer includes silicon grains, and a junction of two adjacent silicon grains has respective ones of the recesses.
8 . The solar cell according to claim 7 , wherein each of the silicon grains has a sheet shape or a block shape.
9 . The solar cell according to claim 1 , wherein the at least one doped semiconductor layer includes a first doped conductive film and a second doped conductive film, the first doped conductive film is formed on the textured structure, and the second doped conductive film is formed over the second surface; and wherein at least one of the first doped conductive film and the second doped conductive film has the recesses.
10 . The solar cell according to claim 1 , wherein the at least one doped semiconductor layer includes a first doped conductive film and a second doped conductive film, and the first doped conductive film and the second doped conductive film are alternatingly formed over the second surface; and wherein at least one of the first doped conductive film and the second doped conductive film has the recesses.
11 . The solar cell according to claim 9 , wherein the first doped conductive film is doped with one of an N-type doping element and a P-type doping element, and the second doped conductive film is doped with one of the N-type doping element and the P-type doping element.
12 . The solar cell according to claim 11 , wherein the first doped conductive film has a material that is different from a material of the second doped conductive film, and the second doped conductive film and the substrate have a same conductive type of doping elements.
13 . The solar cell according to claim 11 , further comprising: a first dielectric layer formed between the second doped conductive film and the second surface, and a second dielectric layer formed between the first doped conductive film and the substrate.
14 . The solar cell according to claim 13 , wherein at least one of the first dielectric layer and the second dielectric layer has a material including silicon oxide, amorphous silicon, microcrystalline silicon, nanocrystalline silicon, or silicon carbide.
15 . The solar cell according to claim 9 , wherein the first doped conductive film has a thickness that is less than or equal to a thickness of the second doped conductive film.
16 . A photovoltaic module, comprising:
at least one cell string each formed by connecting a plurality of solar cells through at least one connecting member;
at least one encapsulation layer each configured to cover a surface of a respective cell string; and
at least one cover plate each configured to cover a surface of a respective encapsulation layer facing away from the respective cell string;
wherein each of the plurality of solar cells includes:
a substrate having a first surface and a second surface opposite to each other, wherein the first surface has a textured structure, and the textured structure includes protrusion structures;
at least one doped semiconductor layer each formed over one of the first surface and the second surface, wherein each of the at least one doped semiconductor layer has a surface facing away from the substrate and provided with recesses, and each of the recesses has a size that is smaller than a size of any of the protrusion structures;
at least one passivation film, a respective passivation film of the at least one passivation film being formed on a respective doped semiconductor layer of the at least one doped semiconductor layer and having at least one portion formed in at least one of the recesses of the respective doped semiconductor layer; and
electrodes penetrating the respective passivation film to be in electrical contact with the respective doped semiconductor layer, wherein the electrodes have at least one portion formed in at least one of the recesses of the respective doped semiconductor layer.
17 . The photovoltaic module according to claim 16 , wherein the recesses have orthographic projections on one of the first surface and the second surface, the orthographic projections having a first area, and the surface of the doped semiconductor layer has an orthographic projection on one of the first surface and the second surface, the orthographic projection having a second area; and wherein the first area and the second area has a ratio in a range of 5% to 80%.
18 . The photovoltaic module according to claim 16 , wherein the respective doped semiconductor layer has a material including polysilicon, monocrystalline silicon, nanocrystalline silicon, amorphous silicon, or microcrystalline silicon.
19 . The photovoltaic module according to claim 16 , wherein the respective doped semiconductor layer has a thickness in a range of 10 nm to 200 nm.