IP Library › Granted Patent US 12,336,302
Granted Patent B1
US 12,336,302 · App. 18/654,293 · Granted Jun 17, 2025

Vertical device triggered silicon control rectifier

Inventors: Sagar Premnath Karalkar (Chelmsford, MA); Alain François Loiseau (Williston, VT); Vibhor Jain (Clifton Park, NY); Wei Liang (South Burlington, VT)
Assignee: GLOBALFOUNDRIES U.S. Inc.
H10D89/713
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Quick Facts
Patent No.
US 12,336,302
App. No.
18/654,293
Granted
Jun 17, 2025
Kind
B1
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a device triggered silicon control rectifier (SCR) and methods of manufacture. the structure includes: a vertical silicon controlled rectifier having a diffusion region in a well of a semiconductor substrate; a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and a body contact adjacent to the vertical triggering device and electrically connecting to the well.

Claims (50)

1. A structure comprising:

a vertical silicon controlled rectifier comprising a diffusion region in a well of a semiconductor substrate;

a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and

a body contact adjacent to the vertical triggering device and electrically connecting to the well,

wherein the vertical silicon controlled rectifier comprises a base with a first conductivity type, the vertical triggering device comprises a base with a second conductivity type, and the diffusion region comprises the first conductivity type, and

wherein a base of the silicon controller rectifier comprises P—SiGe, a base of the vertical triggering device comprises N—SiGe, the well comprises an n-well and the diffusion region comprises a p-type dopant.

2. The structure of claim 1 , wherein the base of the silicon controller rectifier comprises N—SiGe and the base of the vertical triggering device comprises P—SiGe, the well comprises a p-well and the diffusion region comprises an n-type dopant.

3. A structure comprising:

a vertical silicon controlled rectifier comprising a diffusion region in a well of a semiconductor substrate;

a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and

a body contact adjacent to the vertical triggering device and electrically connecting to the well, wherein:

the vertical silicon controlled rectifier comprises a first vertical bipolar transistor with a base of a first conductivity type and an emitter of a second conductivity type; and

the vertical triggering device comprises a second vertical bipolar transistor with a base of the second conductivity type overlapping the diffusion region of the first conductivity type and an emitter of the first conductivity type.

4. The structure of claim 3 , wherein:

the base and the emitter of the vertical controlled rectifier and the emitter of the vertical triggering device electrically connect to an anode; and

the base of the vertical triggering device, the diffusion region and the body contact to the vertical controlled rectifier electrically connect to a cathode.

5. The structure of claim 3 , wherein the

the base and the emitter of the vertical controlled rectifier and the base and the emitter of the vertical triggering device electrically connect to a cathode; and

the diffusion region and the body contact electrically connect to an anode.

6. The structure of claim 3 , wherein the vertical silicon controlled rectifier comprises a PNPN device and the triggering device comprises a vertical NPN transistor.

7. The structure of claim 3 , wherein the vertical silicon controlled rectifier comprises an NPNP device and the triggering device comprises a vertical PNP transistor.

8. The structure of claim 3 , further comprising a body contact region of the second conductivity type separated from the base of the second vertical bipolar transistor by a deep trench isolation structure extending into the well.

9. The structure of claim 3 , further comprising a body contact region of the second conductivity type separated from the base of the second vertical bipolar transistor by a silicide block on a surface of the well between the second vertical bipolar transistor and the body contact region.

10. A structure comprising:

a vertical silicon controlled rectifier, comprising:

a base region comprising a first conductivity type; and

an emitter region comprising a second conductivity type;

a diffusion region comprising the first conductivity type in a well of the second conductivity type; and

a vertical triggering device configured to trigger the vertical silicon controlled rectifier, the vertical triggering device comprising:

a base region comprising the second conductivity type;

an emitter region comprising the first conductivity type; and

the diffusion region shared with the vertical controlled rectifier; and

a body contact to the well, the body contact comparing the second conductivity type.

11. The structure of claim 10 , wherein the vertical silicon controlled rectifier comprises a PNPN device, the vertical transistor comprises a vertical NPN transistor, and the PNPN device and the NPN transistor share the diffusion region of the second conductivity type.

12. The structure of claim 10 , wherein the vertical silicon controlled rectifier comprises a NPNP device, the vertical transistor comprises a vertical PNP transistor, and the NPNP device and the PNN transistor share the diffusion region of the second conductivity type.

13. The structure of claim 10 , further comprising a trench isolation structure isolating the body contact from the vertical triggering device.

14. The structure of claim 10 , further comprising a silicide block over the well between the body contact and the vertical triggering device.

15. The structure of claim 10 , wherein:

the base and the emitter of the vertical controlled rectifier and the emitter of the vertical triggering device electrically connect to an anode; and

the base of the vertical triggering device, the diffusion region and the body contact to the vertical controlled rectifier electrically connect to a cathode.

16. The structure of claim 10 , wherein:

the base and the emitter of the vertical controlled rectifier and the base and the emitter of the vertical triggering device electrically connect to a cathode; and

the diffusion region and the body contact electrically connect to an anode.

17. The structure of claim 10 , wherein the diffusion region extends underneath the base of the emitter and is separated from the base of the vertical silicon controlled rectifier by insulator material.

18. A method comprising:

forming a vertical silicon controlled rectifier over a diffusion region in a well of a semiconductor substrate;

forming a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and

forming a body contact adjacent to the vertical triggering device and electrically connecting to the well,

wherein the vertical silicon controlled rectifier comprises a base with a first conductivity type, the vertical triggering device comprises a base with a second conductivity type, and the diffusion region comprises the first conductivity type, and

wherein a base of the silicon controller rectifier comprises P—SiGe, a base of the vertical triggering device comprises N—SiGe, the well comprises an n-well and the diffusion region comprises a p-type dopant.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2024
From: KARALKAR, SAGAR PREMNATH; LOISEAU, ALAIN FRANÇOIS; JAIN, VIBHOR; LIANG, WEI
To: GLOBALFOUNDRIES U.S. INC.,
Reel/Frame 067306/0234 →
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