IP Library › Granted Patent US 12,563,900
Granted Patent B2
US 12,563,900 · App. 18/663,815 · Granted Feb 24, 2026

Display device

Inventor: Keun Woo Kim (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/1213G09G3/3233H10K59/131G09G2300/0426G09G2300/0819G09G2300/0852G09G2300/0861G09G2310/08
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Quick Facts
Patent No.
US 12,563,900
App. No.
18/663,815
Granted
Feb 24, 2026
Kind
B2
Abstract

A display device includes a light-emitting element disposed on a substrate, a first transistor configured to control a driving current flowing in the light-emitting element, a second transistor configured to apply a data voltage to a source electrode of the first transistor, a third-first transistor connected to a gate electrode of the first transistor, and a third-second transistor connected between a source electrode of the third-first transistor and a drain electrode of the first transistor. One side of a semiconductor region of the third-second transistor adjacent to a source electrode of the third-second transistor has a first width, and another side of the semiconductor region of the third-second transistor adjacent to a drain electrode of the third-second transistor has a second width smaller than the first width.

Claims (32)

1 . A display device comprising:

a light-emitting element disposed on a substrate;

a driving transistor for controlling a driving current flowing in the light-emitting element;

a second transistor for applying a data voltage to a source electrode of the driving transistor;

a third-first transistor connected to a gate electrode of the driving transistor; and

a third-second transistor connected between a source electrode of the third-first transistor and a drain electrode of the driving transistor,

wherein one side of a semiconductor region of the third-second transistor disposed in direct physical contact with a source electrode of the third-second transistor has a first width, and another side of the semiconductor region of the third-second transistor disposed in direct physical contact with a drain electrode of the third-second transistor has a second width that is smaller than the first width, wherein the semiconductor region of the third-second transistor has a shape that tapers in a non-linear manner from the first width to the second width.

2 . The display device of claim 1 , wherein one side of a gate electrode of the third-second transistor disposed adjacent to the source electrode of the third-second transistor has the first width, and another side of the gate electrode of the third-second transistor disposed adjacent to the drain electrode of the third-second transistor has the second width.

3 . The display device of claim 1 , wherein one side of a semiconductor region of the third-first transistor disposed in direct physical contact with the source electrode of the third-first transistor has a third width, and another side of the semiconductor region of the third-first transistor disposed in direct physical contact with a drain electrode of the third-first transistor has a fourth width that is greater than the third width.

4 . The display device of claim 3 , wherein one side of a gate electrode of the third-first transistor disposed adjacent to the source electrode of the third-first transistor has the third width, and another side of the gate electrode of the third-first transistor disposed adjacent to the drain electrode of the third-first transistor has the fourth width.

5 . The display device of claim 1 , further comprising:

a driving voltage line for supplying a driving voltage;

a first capacitor connected between the gate electrode of the driving transistor and the driving voltage line; and

a second capacitor connected between the source electrode of the third-first transistor and the driving voltage line.

6 . The display device of claim 5 , wherein a first capacitor electrode of the second capacitor is formed as one body with the source electrode of the third-first transistor and the drain electrode of the third-second transistor, and the second capacitor electrode of the second capacitor is disposed on the first capacitor electrode of the second capacitor and electrically connected to the driving voltage line.

7 . The display device of claim 5 , further comprising:

a first initialization voltage line supplying a first initialization voltage;

a second initialization voltage line supplying a second initialization voltage;

a fourth-first transistor connected to the gate electrode of the driving transistor;

a fourth-second transistor connected between a drain electrode of the fourth-first transistor and the first initialization voltage line;

a fifth transistor connected between the driving voltage line and the source electrode of the driving transistor;

a sixth transistor connected between the drain electrode of the driving transistor and a first electrode of the light-emitting element; and

a seventh transistor connected between the first electrode of the light-emitting element and the second initialization voltage line.

8 . The display device of claim 7 , further comprising:

a bias voltage line supplying a bias voltage; and

an eighth transistor connected between the bias voltage line and the source electrode of the driving transistor.

9 . The display device of claim 7 , further comprising:

a first gate line supplying a first gate signal to a gate electrode of the second transistor;

a second gate line supplying a second gate signal to a gate electrode of the third-first transistor and a gate electrode of the third-second transistor, which are formed as one body;

a third gate line supplying a third gate signal to a gate electrode of the fourth-first transistor and a gate electrode of the fourth-second transistor, which are integrally formed;

an emission control line supplying an emission signal to a gate electrode of the fifth transistor and a gate electrode of the sixth transistor; and

a fourth gate line supplying a fourth gate signal to a gate electrode of the seventh transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2024
From: KIM, KEUN WOO
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 067408/0996 →
Priority Claims (1)
KR 10-2023-0130962 · Sep 27, 2023 · national
Continuity (1)
Related Publication 20250107329A1 · Mar 27, 2025
References Cited (26)
US 11164526B2 · Kim et al. · 2021 [cited by applicant]
US 11514855B2 · Lim · 2022 [cited by examiner]
US 11538413B1 · Kim · 2022 [cited by examiner]
US 11785805B2 · Kim · 2023 [cited by examiner]
US 20040080012A1 · Kim · 2004 [cited by examiner]
US 20120019504A1 · Han · 2012 [cited by examiner]
US 20150129844A1 · Kang · 2015 [cited by examiner]
US 20160254340A1 · Kwon · 2016 [cited by examiner]
US 20210125543A1 · Kim · 2021 [cited by examiner]
US 20210210020A1 · Cho · 2021 [cited by examiner]
US 20210210518A1 · Tanaka · 2021 [cited by examiner]
US 20210280652A1 · Kim · 2021 [cited by examiner]
US 20220005902A1 · Han · 2022 [cited by examiner]
US 20220130931A1 · Lim · 2022 [cited by examiner]
US 20220139966A1 · Kim · 2022 [cited by examiner]
US 20220158051A1 · Lee · 2022 [cited by examiner]
US 20240107808A1 · Kim et al. · 2024 [cited by applicant]
US 20240112625A1 · Sang · 2024 [cited by examiner]
US 20240145483A1 · Kim · 2024 [cited by examiner]
KR 20160032792A · 2016 [cited by applicant]
KR 20200124365A · 2020 [cited by applicant]
KR 20210113513A · 2021 [cited by applicant]
KR 20220060031A · 2022 [cited by applicant]
Dictionary.com, “adjacent,” in Dictionary.com Unabridged. Source location: Random House, Inc. http://dictionary.reference.com/browse/adjacent, Nov. 18, 2011, p. 1. [cited by examiner]
Bansal, et al., Modeling and Optimization of Fringe Capacitance of Nanoscale DGMOS Devices, IEEE Transactions on Electron Devices, vol. 52, No. 2, Feb. 2005, New York, NY. [cited by applicant]
Park, et al., Suppression of Leakage Current in Solid-Phase Crystallization Silicon Thin-Film Transistors Employing Off-State-Bias Annealing, Japanese Journal of Applied Physics 48 (2009) 111202, School of Electrical En… [cited by applicant]