Gate-all-around structure and methods of forming the same
Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer including different semiconductor materials, and the fin comprises a channel region and a source/drain region; forming a dummy gate structure over the channel region of the fin and over the substrate; etching a portion of the fin in the source/drain region to form a trench therein, wherein a bottom surface of the trench is below a bottom surface of the second semiconductor layer; selectively removing an edge portion of the second semiconductor layer in the channel region such that the second semiconductor layer is recessed; forming a sacrificial structure around the recessed second semiconductor layer and over the bottom surface of the trench; and epitaxially growing a source/drain feature in the source/drain region of the fin.
1 . A semiconductor device comprising:
a first plurality of semiconductor layers disposed over a first channel region of a semiconductor fin protruding from a substrate;
a second plurality of semiconductor layers disposed over a second channel region of the semiconductor fin protruding from the substrate;
a first gate structure comprising a first gate dielectric layer wrapping around at least one semiconductor layer from the first plurality of semiconductor layers; and a first gate electrode wrapping around the first gate dielectric layer disposed on the at least one semiconductor layer from the first plurality of semiconductor layers;
a second gate structure comprising a second gate dielectric layer wrapping around at least one semiconductor layer from the second plurality of semiconductor layers; and a second gate electrode wrapping around the second gate dielectric layer disposed on the at least one semiconductor layer from the second plurality of semiconductor layers;
a source/drain feature interfacing with the at least one semiconductor layer from the first plurality of semiconductor layers; and
a dielectric spacer comprising a first portion extending from the first gate structure to the second gate structure, wherein the dielectric spacer covers a top surface of the source/drain feature.
2 . The semiconductor device of claim 1 further comprising an etch stop layer deposited over the first portion of the dielectric spacer.
3 . The semiconductor device of claim 2 further comprising an interlayer dielectric layer deposited over the etch stop layer.
4 . The semiconductor device of claim 1 , wherein the source/drain feature further interfaces with at least one semiconductor layer from the second plurality of semiconductor layers.
5 . The semiconductor device of claim 1 , wherein each semiconductor layer from the first plurality of semiconductor layers is spaced apart from each other, and wherein each semiconductor layer from the second plurality of semiconductor layers is spaced apart from each other.
6 . The semiconductor device of claim 1 , wherein the first plurality of semiconductor layers is formed of a same material, and wherein the second plurality of semiconductor layers is formed of the same material.
7 . The semiconductor device of claim 1 further comprising a shallow trench isolation structure disposed on the substrate, the shallow trench isolation structure having a top surface facing away from the substrate, wherein the shallow trench isolation structure is disposed adjacent to a lower portion of the semiconductor fin.
8 . The semiconductor device of claim 1 wherein the dielectric spacer further includes a second portion between a bottom surface of the source/drain feature and the substrate.
9 . The semiconductor device of claim 1 wherein the dielectric spacer further includes second portions contacting side surfaces of the source/drain feature.
10 . The semiconductor device of claim 1 wherein the first portion of the dielectric spacer contacts the top surface of the source/drain feature.
11 . A semiconductor device comprising:
a plurality of semiconductor layers disposed over a channel region of a semiconductor fin protruding from a substrate;
a gate structure comprising a gate dielectric layer wrapping around at least one semiconductor layer from the plurality of semiconductor layers; and a gate electrode wrapping around the gate dielectric layer disposed on the at least one semiconductor layer from the plurality of semiconductor layers;
a source/drain feature interfacing with the at least one semiconductor layer from the first plurality of semiconductor layers; and
a dielectric spacer extending from the gate structure and covering a top surface of the source/drain feature.
12 . The semiconductor device of claim 11 further comprising an etch stop layer deposited over the dielectric spacer.
13 . The semiconductor device of claim 12 further comprising an interlayer dielectric layer deposited over the etch stop layer.
14 . The semiconductor device of claim 11 , wherein each semiconductor layer from the plurality of semiconductor layers is spaced apart from each other.
15 . The semiconductor device of claim 11 , wherein the plurality of semiconductor layers is formed of a same material.
16 . The semiconductor device of claim 11 further comprising a shallow trench isolation structure disposed on the substrate, the shallow trench isolation structure having a top surface facing away from the substrate, wherein the shallow trench isolation structure is disposed adjacent to a lower portion of the semiconductor fin.
17 . The semiconductor device of claim 11 wherein the dielectric spacer further includes a portion between a bottom surface of the source/drain feature and the substrate.
18 . The semiconductor device of claim 11 wherein the dielectric spacer further includes portions contacting sidewall surfaces of the source/drain feature.
19 . The semiconductor device of claim 11 wherein the dielectric spacer contacts the top surface of the source/drain feature.