Apparatus and method for growth of gallium oxide crystal with an offcut
Apparatuses and methods as described herein can be used to grow a Ga 2 O 3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principal plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50 arcsec.
1 . A method of growing a Ga 2 O 3 based single crystal using an Edge-defined film fed growth (EFG) method, comprising:
bringing a seed crystal having a (100) crystallographic orientation in contact with a Ga 2 O 3 base melt, wherein a growth face is parallel to the base melt;
rotate a shaft clockwise or counterclockwise about the pull direction by a degree of rotation, wherein the degree of rotation is greater than 2 degrees and less than 20 degrees;
pulling the seed crystal to grow the Ga 2 O 3 based single crystal, wherein the Ga 2 O 3 based single crystal has a (010) crystallographic orientation as it is being grown; and
cooling the β-Ga 2 O 3 based single crystal after it has reached a length that is greater than 40 mm, wherein the single crystal has a full width half mass (FWHM) of less than 50 arcsec.
2 . The method of claim 1 , wherein the length of the Ga 2 O 3 based single crystal is greater than 42 mm.
3 . The method of claim 1 , wherein the length of the Ga 2 O 3 based single crystal is greater than 52 mm and not greater than 1000 mm.
4 . The method of claim 1 , wherein the length of the Ga 2 O 3 based single crystal is greater than 60 mm and not greater than 1000 mm.
5 . The method of claim 2 , wherein the length of the Ga 2 O 3 based single crystal is less than 800 mm.
6 . The method of claim 1 , wherein the Ga 2 O 3 based single crystal has a width that is greater than 25 mm.
7 . The method of claim 1 , wherein the Ga 2 O 3 based single crystal has a width that is greater than 40 mm.
8 . The method of claim 1 , wherein the Ga 2 O 3 based single crystal has a width that is greater than 50 mm.
9 . The method of claim 6 , wherein the width of the β-Ga 2 O 3 based single crystal is less than 153 mm.
10 . The method of claim 1 , wherein the Ga 2 O 3 based single crystal has a thickness of not less than about 0.2 mm.
11 . The method of claim 1 , wherein the Ga 2 O 3 based single crystal has a thickness of not less than about 5 mm.
12 . The method of claim 10 , wherein the β-Ga 2 O 3 based single crystal has a thickness of not greater than 25 mm.
13 . The method of claim 1 , further comprising adding a dopant to the Ga 2 O 3 base melt.
14 . The method of claim 13 , wherein the dopant comprises a material selected from the group consisting of Sc, Sn, In, Zr, Cr, Ce, Mn, Fe, Cu, Ag, Zn, Cd, Al, Si, Mg, Ge, and Nb.
15 . The method of claim 14 , wherein the crystal has a dopant distribution that is the same at a top of the crystal as a bottom of the crystal.