Self-aligned magnetic clad write line and its method of formation

1. A method for forming a semiconductor device comprising:

forming magnetic memory elements overlying a semiconductor device substrate;

forming a dielectric layer overlying the magnetic memory elements;

forming a trench opening within the dielectric layer;

forming magnetic cladding sidewall spacers on adjacent sidewalls of the trench;

forming a conductive bit line material within the trench;

forming a magnetic cladding cap within the trench and overlying the conductive bit line material; wherein portions of the magnetic cladding cap are substantially recessed with respect to a top surface of the dielectric layer, and wherein a combination of the conductive bit line material within the trench, the magnetic cladding sidewall spacers and the magnetic cladding cap form a clad bit line.

2. The method of claim 1 , wherein forming a conductive bit line material within the trench further comprises:

depositing a layer of a conductive material overlying the substrate surface and within the trench opening;

removing portions of the conductive material not contained within the trench opening; and

recessing portions of the conductive material within the trench opening below the top surface of the conductive layer.

3. The method of claim 2 , wherein at least one of removing portions or the conductive material and recessing portions of the conductive material includes using spinetch process.

4. The method of claim 1 , wherein the magnetic cladding sidewall spacers include NiFc.

5. The method of claim 1 , wherein the magnetic cladding sidewall spacers include a material selected from a group consisting of NiFeCo, and CoFe.

6. The method of claim 1 , wherein forming a magnetic cladding cap within the trench further comprises:

depositing a magnetic cladding layer overlying the substrate surface and within a recessed portion of the trench; and

removing portions of the magnetic cladding capping layer not contained within the recessed portions of the trench.

7. The method of claim 6 , wherein the depositing a magnetic cladding layer overlying the substrate surface further comprises placing the magnetic cladding layer.

8. The method of claim 7 , wherein plating the magnetic cladding layer further comprises electrolessly plating the magnetic cladding layer.

9. The method of claim 1 , wherein the magnetic cladding cap includes a NiFe material.

10. The method of claim 1 , wherein the magnetic cladding cap includes a material selected from a group consisting of NiFeCo, and CoFe.

11. The method of claim 1 , further comprising forming a conductive barrier material that at least partially surrounds the conductive bit line material and is interposed between the conductive bit line material and the magnetic cladding side wall spacers.

12. The method of claim 1 , further comprising forming a conductive barrier material that at least partially surrounds the magnetic clad cap and the magnetic cladding sidewall spacers.

13. The method of claim 1 , further comprising forming a conductive barrier material between the magnetic cladding sidewall spacers and the dielectric layer.

14. The method of claim 1 , further comprising forming a dielectric barrier layer overlying the clad bit line.

15. The method of claim 14 , wherein the dielectric barrier layer includes a material selected from a group consisting of silicon, oxygen and nitrogen.

16. The method of claim 1 , wherein the magnetic cladding cap comprises an element selected from the group consisting of Ni, Fe and Co.