Compressive nitride film and method of manufacturing thereof
View Patent ↗Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generating an environment filled with high-density plasma using source gases of at least silane, argon and nitrogen; biasing the substrate to a high frequency power of varying density, in a range between 0.8 W/cm 2 and 5.0 W/cm 2 ; and depositing the high-density plasma to the plurality of gate structures to form the compressive stress nitride film.
1. A method of forming a compressive stress nitride film, the method comprising:
creating a plurality of gate structures of p-type field effect transistors on a substrate;
placing said gate structures inside a high-density plasma environment;
applying a high frequency bias power of varying densities ranging from about 0.8 W/cm 2 to about 4.0 W/cm 2 to said substrate;
depositing said high-density plasma to form said compressive stress nitride film covering said gate structures; and
forming said compressive stress nitride film at a higher rate in a dense poly-contact area between two adjacent said gate structures than in large open areas at the sides of said gate structures.
2. The method of claim 1 , comprising varying said bias power from about 1.4 W/cm 2 to about 2.1 W/cm 2 during high-density plasma deposition to form said compressive stress nitride film void-free.
3. The method of claim 2 , comprising forming said void-free compressive stress nitride film in between said plurality of gate structures.
4. The method of claim 1 , comprising creating a surface topography of said compressive stress nitride film that is adapted to subsequent film deposition processes.
5. The method of claim 4 , wherein said surface topography has a gap-fill friendly shape that resembles character “V”.