Semiconductor device and manufacturing method thereof
A result of formation of an opening in a semiconductor substrate can be judged without cutting a semiconductor wafer and observing a cross-section of the cut wafer. A semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, an opening formed in the semiconductor substrate to expose the pad electrode, a wiring layer connected with the pad electrode through the opening and a monitoring opening formed in a scribe line to monitor a result of the formation of the opening.
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate;
forming a metal layer on a first surface of the semiconductor substrate;
forming for a second surface of the semiconductor substrate a first opening in the semiconductor substrate to expose the metal layer;
forming a second opening in the semiconductor substrate;
forming a wiring layer on the second surface that is connected with the metal layer through the first opening; and
viewing the second opening from a side of the first surface.
2. The method of claim 1 , wherein the second opening is formed when the first opening is formed.
3. The method of claim 1 , wherein the second opening is formed in a scribe line.
4. The method of claim 1 , wherein the forming of the metal layer is performed so as not to cover the second opening.
5. The method of claim 1 , wherein the forming of the metal layer comprises forming a monitoring pattern for size measurement over a location of the semiconductor substrate corresponding to the second opening.
6. The method of claim 5 , wherein the forming of the monitoring pattern comprises forming of a rectangular pattern.
7. The method of claim 5 , wherein the forming of the monitoring pattern comprises forming of a circular pattern, a cruciform pattern or a rhombic pattern.
8. The method of claim 1 , further comprising forming a protection layer on the wiring layer, forming an opening in the protection layer and forming a conductive terminal on the wiring layer through the opening of the protection layer.
9. The method of claim 1 , further comprising attaching a supporting member to the first surface side of the semiconductor substrate.