Substrate heating apparatus, heating method, and semiconductor device manufacturing method
View Patent ↗A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.
1. A substrate heating apparatus including a conductive heater which is arranged to oppose a substrate held in a vessel in a reduced pressure and heats the substrate, comprising:
a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons; and
an acceleration power supply which accelerates the thermoelectrons between the filament and the conductive heater,
wherein the filament includes
inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate,
outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and
a region formed by connecting an end point of each of the inner peripheral portions and an end point of a corresponding one of the outer peripheral portions.
2. The apparatus according to claim 1 , wherein
each of the outer peripheral portions is formed by connecting two end points arranged at a predetermined interval on the outer circle, and
one of the two end points is connected to an end point of a nearest one of the inner peripheral portions.
3. The apparatus according to claim 1 , wherein
each of the outer peripheral portions is formed of one of end points arranged at a predetermined interval on the outer circle, and
the one end point is connected to an end point of a nearest one of the inner peripheral portions.
4. The apparatus according to claim 1 , wherein two ends of the filament are connected to the filament power supply.
5. The apparatus according to claim 1 , wherein the filament is formed by overlapping, in the conductive heater, a plurality of wiring lines having the same arrangement or a plurality of wiring lines having different arrangements.
6. The apparatus according to claim 1 , wherein the substrate is made of one of a single-crystal semiconductor and a compound semiconductor.
7. A substrate heating apparatus including a conductive heater which is arranged to oppose a substrate held in a vessel in a reduced pressure and heats the substrate, comprising:
a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons; and
an acceleration power supply which accelerates the thermoelectrons between the filament and the conductive heater,
wherein the filament is formed by connecting, of inner circle dividing points which divide at a predetermined interval a circumference of an inner circle concentric with the substrate and outer circle dividing points which divide at the predetermined interval a circumference of an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, a nearest one of the inner circle dividing points and a nearest one of the outer circle dividing points.
8. The apparatus according to claim 4 , wherein two ends of the filament are connected to the filament power supply.
9. The apparatus according to claim 4 , wherein the filament is formed by overlapping, in the conductive heater, a plurality of wiring lines having the same arrangement or a plurality of wiring lines having different arrangements.
10. The apparatus according to claim 4 , wherein the substrate is made of one of a single-crystal semiconductor and a compound semiconductor.
11. A heating method comprising a heating step of heating the substrate using the substrate heating apparatus according to claim 1 .
12. A semiconductor device manufacturing method of manufacturing a semiconductor device made of one of a single-crystal semiconductor and a compound semiconductor, comprising a heating step of heating the substrate using a heating method according to claim 11 .
13. A heating method comprising a heating step of heating the substrate using the substrate heating apparatus according to claim 4 .
14. A semiconductor device manufacturing method of manufacturing a semiconductor device made of one of a single-crystal semiconductor and a compound semiconductor, comprising a heating step of heating the substrate using a heating method according to claim 13 .