Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
View Patent ↗A semiconductor device is made by forming a smooth conductive layer over a substrate. A first insulating layer is formed over a first surface of the smooth conductive layer. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. The substrate is removed. A second conductive layer is formed over a second surface of the smooth conductive layer opposite the first surface of the smooth conductive layer. A third insulating layer is formed over the second conductive layer. The second conductive layer, smooth conductive layer, first insulating layer, and first conductive layer constitute a MIM capacitor. A portion of the second conductive layer includes an inductor. The smooth conductive layer has a smooth surface to reduce particles and hill-locks which decreases ESR, increases Q factor, and increases ESD of the MIM capacitor.
1. A method of making a semiconductor device, comprising:
providing a temporary substrate;
forming an interface layer over the temporary substrate;
forming a smooth conductive layer over the interface layer;
forming a first insulating layer over a first surface of the smooth conductive layer;
forming a second insulating layer over the first insulating layer and first surface of the smooth conductive layer;
removing a portion of the second insulating layer to expose the first insulating layer and interface layer;
forming a first conductive layer over the first insulating layer and interface layer;
forming a third insulating layer over the second insulating layer and first conductive layer;
removing the temporary substrate to expose the interface layer;
removing a portion of the interface layer to expose the smooth conductive layer and first conductive layer;
forming a second conductive layer over the first conductive layer and a second surface of the smooth conductive layer opposite the first surface of the smooth conductive layer; and
forming a fourth insulating layer over the second conductive layer and interface layer.
2. The method of claim 1 , further including:
removing a portion of the fourth insulating layer to expose the second conductive layer; and
forming a third conductive layer over the second conductive layer.
3. The method of claim 1 , wherein the second conductive layer, smooth conductive layer, first insulating layer, and first conductive layer constitute a metal-insulator-metal (MIM) capacitor.
4. The method of claim 3 , wherein the smooth conductive layer reduces particles and hill-locks between the first insulating layer and smooth conductive layer which increases breakdown voltage and electrostatic discharge protection for the MIM capacitor.
5. The method of claim 3 , wherein the smooth conductive layer and second conductive layer form a bottom electrode of the MIM capacitor and increase Q factor of the MIM capacitor.
6. The method of claim 1 , wherein a portion of the second conductive layer includes an inductor.
7. A method of making a semiconductor device, comprising:
providing a carrier;
forming a smooth conductive layer over the carrier;
forming a first insulating layer over a first surface of the smooth conductive layer;
forming a second insulating layer over the first insulating layer and first surface of the smooth conductive layer;
removing a portion of the second insulating layer to expose the first insulating layer;
forming a first conductive layer over the first insulating layer;
forming a third insulating layer over the second insulating layer and first conductive layer;
removing the carrier;
forming a second conductive layer over a second surface of the smooth conductive layer opposite the first surface of the smooth conductive layer; and
forming a fourth insulating layer over the second conductive layer.
8. The method of claim 7 , further including:
removing a portion of the fourth insulating layer to expose the second conductive layer; and
forming a third conductive layer over the second conductive layer.
9. The method of claim 7 , wherein the second conductive layer, smooth conductive layer, first insulating layer, and first conductive layer constitute a metal-insulator-metal (MIM) capacitor.
10. The method of claim 9 , wherein the smooth conductive layer reduces particles and hill-locks between the first insulating layer and smooth conductive layer which increases breakdown voltage and electrostatic discharge protection for the MIM capacitor.
11. The method of claim 9 , wherein the smooth conductive layer and second conductive layer form a bottom electrode of the MIM capacitor and increase Q factor of the MIM capacitor.
12. The method of claim 7 , wherein a portion of the second conductive layer includes an inductor.
13. The method of claim 7 , further including forming a resistive layer between the substrate and second insulating layer.
14. A method of making a semiconductor device, comprising:
providing a carrier;
forming a first conductive layer over the carrier;
forming a first insulating layer over a first surface of the first conductive layer;
forming a second insulating layer over the first insulating layer and first surface of the first conductive layer;
removing a portion of the second insulating layer to expose the first insulating layer;
forming a second conductive layer over the first insulating layer;
forming a third insulating layer over the second insulating layer and second conductive layer;
removing the carrier;
forming a third conductive layer over a second surface of the first conductive layer opposite the first surface of the first conductive layer; and
forming a fourth insulating layer over the third conductive layer.
15. The method of claim 14 , further including:
removing a portion of the fourth insulating layer to expose the third conductive layer; and
forming a fourth conductive layer over the third conductive layer.
16. The method of claim 14 , wherein the third conductive layer, first conductive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal (MIM) capacitor.
17. The method of claim 16 , wherein the first conductive layer reduces particles and hill-locks between the first insulating layer and first conductive layer which increases breakdown voltage and electrostatic discharge protection for the MIM capacitor.
18. The method of claim 16 , wherein the first conductive layer and third conductive layer form a bottom electrode of the MIM capacitor and increase Q factor of the MIM capacitor.
19. The method of claim 14 , wherein a portion of the third conductive layer includes an inductor.
20. The method of claim 14 , wherein the third or fourth insulation layer provide structural support.
21. A method of making a semiconductor device, comprising:
providing a carrier;
forming a first conductive layer over the carrier;
forming a first insulating layer over a first surface of the first conductive layer;
forming a second insulating layer over the first surface of the first conductive layer;
forming a second conductive layer over the first insulating layer;
forming a third insulating layer over the second insulating layer and second conductive layer;
removing the carrier;
forming a third conductive layer over a second surface of the first conductive layer opposite the first surface of the first conductive layer; and
forming a fourth insulating layer over the third conductive layer.
22. The method of claim 21 , further including:
removing a portion of the fourth insulating layer to expose the third conductive layer; and
forming a fourth conductive layer over the third conductive layer.
23. The method of claim 21 , wherein the third conductive layer, first conductive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal (MIM) capacitor.
24. The method of claim 23 , wherein the first conductive layer reduces particles and hill-locks between the first insulating layer and first conductive layer which increases breakdown voltage and electrostatic discharge protection for the MIM capacitor.
25. The method of claim 23 , wherein the first conductive layer and third conductive layer form a bottom electrode of the MIM capacitor and increase Q factor of the MIM capacitor.
26. The method of claim 21 , wherein a portion of the third conductive layer includes an inductor.
27. The method of claim 21 , wherein the third or fourth insulation layer provide structural support.