Techniques for use of nanotechnology in photovoltaics
View Patent ↗Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
1. A method of forming a photovoltaic device, the method comprising the steps of:
forming a plurality of silicon, germanium or silicon germanium nanowires on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest;
in the presence of a first doping agent and a first volatile precursor, depositing a first doped semiconductor layer over the nanowire forest that conforms to, and has the same relative shape as, the nanowire forest;
in the presence of a second doping agent and a second volatile precursor, depositing a second doped semiconductor layer on the first doped semiconductor layer that conforms to, and has the same relative shape as, the nanowire forest,
wherein at least one of the first volatile precursor and the second volatile precursor comprises one or more of silane and germane, and wherein the first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent, such that a p-n junction is formed over the nanowire forest; and
depositing a transparent electrode layer over at least a portion of the second doped semiconductor layer.
2. The method of claim 1 , wherein the forming step further comprises the step of:
doping the substrate with an n-type doping agent.
3. The method of claim 1 , wherein the forming step further comprises the steps of:
depositing at least one catalyst metal layer on the substrate;
annealing the substrate;
exposing the substrate to at least one nanowire volatile precursor; and
growing the plurality of nanowires.
4. The method of claim 3 , wherein the at least one catalyst metal layer comprises one or more of gold, gallium and indium.
5. The method of claim 3 , wherein the at least one nanowire volatile precursor comprises one or more of silane and germane.
6. The method of claim 3 , wherein the substrate is annealed at a temperature of between about 400° C. and about 500° C.
7. The method of claim 1 , wherein the n-type doping agent comprises phosphine and the p-type doping agent comprises diborane.
8. The method of claim 1 , wherein one or more of the first doped layer, the second doped layer and the transparent electrode layer are deposited by chemical vapor deposition.
9. The method of claim 1 , further comprising the step of:
roughening at least a portion of a surface of the substrate onto which the plurality of nanowires are formed.
10. A method of forming a photovoltaic device, the method comprising the steps of:
in the presence of a first doping agent and a first volatile precursor, forming a plurality of doped nanowires on a substrate to form a nanowire forest;
in the presence of a second doping agent and a second volatile precursor, depositing a doped semiconductor layer on the nanowire forest that conforms to, and has the same relative shape as, the nanowire forest; and
depositing a transparent electrode layer over at least a portion of the doped semiconductor layer,
wherein the first volatile precursor and the second volatile precursor each comprises germane wherein the first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent, such that a p-n junction is formed with the doped nanowires.
11. The method of claim 10 , wherein the forming step further comprises the step of:
doping the substrate with an n-type doping agent.
12. The method of claim 10 , wherein the forming step further comprises the steps of:
depositing at least one catalyst metal layer on the substrate;
annealing the substrate;
exposing the substrate to at least one nanowire volatile precursor; and
growing the plurality of nanowires.
13. The method of claim 12 , wherein the at least one catalyst metal layer comprises one or more of gold, gallium and indium.
14. The method of claim 12 , wherein the substrate is annealed at a temperature of between about 400° C. and about 500° C.
15. The method of claim 10 , wherein the n-type doping agent comprises phosphine and the p-type doping agent comprises diborane.
16. The method of claim 10 , wherein one or more of the doped semiconductor layer and the transparent electrode layer are deposited by chemical vapor deposition.
17. The method of claim 10 , further comprising the step of:
roughening at least a portion of a surface of the substrate onto which the plurality of nanowires are formed.