Grooving bumped wafer pre-underfill system
View Patent ↗A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.
1. A semiconductor device, comprising:
a semiconductor wafer having a plurality of bumps formed on a first surface of the semiconductor wafer;
a plurality of grooves formed in the first surface;
a pre-underfill layer formed over the first surface that completely fills the plurality of grooves from a first sidewall to a second sidewall while leaving a portion of each bump exposed;
a first adhesive layer disposed on and directly contacting the pre-underfill layer and further contacting an entirety of the exposed portion of each bump; and
a second adhesive layer disposed over the first adhesive layer or over a second surface of the semiconductor wafer opposite the first surface.
2. The semiconductor device of claim 1 , wherein the first adhesive layer is removed from the pre-underfill layer while leaving the plurality of bumps attached to the first surface.
3. The semiconductor device of claim 1 , wherein the first adhesive layer is peeled from the pre-underfill layer while leaving the plurality of bumps attached to the first surface.
4. The semiconductor device of claim 1 , wherein a portion of the second surface is removed.
5. The semiconductor device of claim 1 , wherein the semiconductor wafer is singulated into a plurality of segments along the plurality of grooves.
6. The semiconductor device of claim 1 , wherein the pre-underfill material is selected from the group consisting of polyimide, thermoplastic resin, acryl, epoxy, or polymer material.
7. A semiconductor device, comprising:
a semiconductor wafer having a plurality of bumps formed on an active surface of the semiconductor wafer;
a plurality of grooves formed in the active surface;
a pre-underfill layer formed over the active surface that completely fills the plurality of grooves from a first sidewall to a second sidewall and partially coats the plurality of bumps so that about half of each bump remains uncoated, wherein a portion of a back surface of the semiconductor wafer opposite the active surface is removed;
a first adhesive layer disposed on and directly contacting the pre-underfill layer and further contacting an entirety of the uncoated portion of each bump; and
a second adhesive layer disposed over the back surface of the semiconductor wafer or over the first adhesive layer.
8. The semiconductor device of claim 7 , wherein, if the second adhesive layer is formed over the back surface of the semiconductor wafer the first adhesive layer is peeled from the pre-underfill layer while leaving the plurality of bumps attached to the active surface.
9. The semiconductor device of claim 7 , wherein, if the second adhesive layer is formed over the back surface, the semiconductor wafer is singulated into a plurality of segments by a cut along the plurality of grooves and each segment is removed from the second adhesive layer.
10. The semiconductor device of claim 9 , wherein, if the second adhesive layer is formed over the back surface, the cut along the plurality of grooves extends partially into the second adhesive layer.
11. The semiconductor device of claim 7 , wherein, if the second adhesive layer is formed over the first adhesive layer, the cut along the plurality of grooves extends partially into the first adhesive layer.
12. The semiconductor device of claim 7 , wherein, if the second adhesive layer is formed over the first adhesive layer, each segment is removed from the first adhesive layer.
13. The semiconductor device of claim 7 , wherein the pre-underfill material is selected from the group consisting of polyimide, thermoplastic resin, acryl, epoxy, or polymer material.
14. A semiconductor device, comprising:
a semiconductor wafer having a plurality of bumps formed on a first surface of the semiconductor wafer;
a plurality of grooves formed in the first surface;
a pre-underfill layer formed over the first surface that completely fills the plurality of grooves while leaving a portion of each bump exposed, wherein a portion of a second surface of the semiconductor wafer opposite the first surface is removed;
a first adhesive layer disposed on and contacting the pre-underfill layer and further disposed around the exposed portion of each bump; and
a second adhesive layer disposed over the second surface of the semiconductor wafer or over the first adhesive layer.
15. The semiconductor device of claim 14 , wherein the semiconductor wafer is singulated into a plurality of segments along the plurality of grooves.
16. The semiconductor device of claim 14 , wherein, if the second adhesive layer is formed over the second surface, the first adhesive layer is removed from the pre-underfill layer while leaving the plurality of bumps attached to the first surface.
17. The semiconductor device of claim 15 , wherein, if the second adhesive layer is formed over the second surface, each segment is removed from the second adhesive layer.
18. The semiconductor device of claim 15 , wherein, if the second adhesive layer is formed over the first adhesive layer, each segment is removed from the first adhesive layer.
19. The semiconductor device of claim 14 , wherein the pre-underfill material is selected from the group consisting of polyimide, thermoplastic resin, acryl, epoxy, or polymer material.
20. A semiconductor device, comprising:
a bumped semiconductor wafer having a plurality of grooves formed in a first surface;
a pre-underfill layer formed over the first surface that fills the plurality of grooves;
a first adhesive layer disposed on the pre-underfill layer; and
a second adhesive layer disposed over a second surface of the bumped semiconductor wafer opposite the first surface or over the first adhesive layer.
21. The semiconductor device of claim 20 , wherein, if the second adhesive layer is formed over the second surface, the first adhesive layer is removed from the pre-underfill layer.
22. The semiconductor device of claim 20 , wherein, if the second adhesive layer is formed over the second surface, the first adhesive layer is peeled from the pre-underfill layer.
23. The semiconductor device of claim 20 , wherein a portion of the second surface is removed.
24. The semiconductor device of claim 20 , wherein the bumped semiconductor wafer is singulated into a plurality of segments along the plurality of grooves.
25. The semiconductor device of claim 20 , wherein the pre-underfill material is selected from the group consisting of polyimide, thermoplastic resin, acryl, epoxy, or polymer material.