Ion implantation for suppression of defects in annealed SiGe layers
View Patent ↗A substrate material including a Si-containing substrate and an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate. The substrate material further includes a substantially relaxed SiGe alloy layer present atop the insulating region, wherein the substantially relaxed SiGe alloy layer has a planar defect density from about 5000 defects/cm −2 or less. The substrate material may be employed in a heterostructure, in which a strained Si layer is present atop the substantially relaxed SiGe alloy layer of the substrate material.
1. A substrate material comprising:
a Si-containing substrate;
an insulating region that is resistant to Ge diffusion present atop said Si-containing substrate; and
a substantially relaxed SiGe alloy layer present atop said insulating region, wherein said substantially relaxed SiGe alloy layer has a planar defect density from about 5000 defects/cm −2 or less.
2. The substrate material of claim 1 wherein said substantially relaxed SiGe alloy layer has a measured lattice relaxation of from about 1 to about 100%.
3. A hetero structure comprising:
a Si-containing substrate;
an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate;
a substantially relaxed SiGe alloy layer present atop the insulating region, wherein the substantially relaxed SiGe alloy layer has a planar defect density from about 5000 defects/cm −2 or less; and
a strained Si layer formed atop the substantially relaxed SiGe alloy layer.
4. The heterostructure of claim 3 wherein said substantially relaxed SiGe alloy layer has a measured lattice relaxation of from about 1 to about 100.
5. The heterostructure of claim 3 wherein said strained Si layer is replaced with a lattice mismatched compound selected from the group consisting of GaAs and GaP.
6. The heterostructure of claim 3 wherein alternating layers of relaxed SiGe and strainedSi are formed atop said strained Si layer.