Substrate planarization with imprint materials and processes
View Patent ↗The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking. The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.
1. A photolithography method comprising:
forming a planarization layer of a planarization composition on a substrate, wherein said planarization composition comprises at least one aromatic monomer and at least one non-aromatic monomer and said at least one aromatic monomer has a weight concentration ranging from about 5% to about 35% of the total weight of said planarization composition;
bringing a substantially flat surface into contact with said planarization layer on said substrate;
curing said planarization layer by exposing said planarization layer to a first radiation or by baking said planarization layer;
removing said substantially flat surface;
forming a photoresist layer on said planarization layer;
exposing said photoresist layer to a second radiation having an imaging wavelength;
developing said photoresist layer to form a relief image in said photoresist layer; and
transferring said relief image into said substrate.
2. The method of claim 1 , wherein said imaging wavelength of said second radiation is about 193 nm.
3. The method of claim 1 , wherein said planarization composition has a refractive index (n) in the range from about 1.4 to about 1.8 and an absorption parameter (k) in the range from about 0.2 to about 0.5 at said imaging wavelength of said second radiation.
4. A photolithography method comprising:
forming a planarization layer of a planarization composition on a substrate, wherein said planarization composition comprises at least one aromatic monomer and at least one non-aromatic monomer and said at least one non-aromatic monomer has a weight concentration ranging from about 65% to about 95% of the total weight of said planarization compositional;
bringing a substantially flat surface into contact with said planarization layer on said substrate;
curing said planarization layer by exposing said planarization layer to a first radiation or by baking said planarization layer;
removing said substantially flat surface;
forming a photoresist layer on said planarization layer;
exposing said photoresist layer to a second radiation having an imaging wavelength;
developing said photoresist layer to form a relief image in said photoresist layer; and
transferring said relief image into said substrate.
5. The method of claim 1 , wherein said at least one aromatic monomer is selected from the group consisting of
6. A photolithography method comprising:
forming a planarization layer of a planarization composition on a substrate, wherein said planarization composition comprises at least one aromatic monomer and at least one non-aromatic monomer and said at least one non-aromatic monomer is selected from the group consisting of
bringing a substantially flat surface into contact with said planarization layer on said substrate;
curing said planarization layer by exposing said planarization layer to a first radiation or by baking said planarization layer;
removing said substantially flat surface;
forming a photoresist layer on said planarization layer;
exposing said photoresist layer to a second radiation having an imaging wavelength;
developing said photoresist layer to form a relief image in said photoresist layer; and
transferring said relief image into said substrate.
7. The method of claim 1 , wherein said planarization composition further comprises at least one of a photoacid generator, a sensitizing agent, a surfactant, an adhesion agent and a base quencher.
8. The method of claim 1 , wherein said planarization composition comprises a dye which renders said planarization composition having a first absorption peak in a wavelength range from about 900 nm to about 1200 nm and a second absorption peak in a wavelength range from about 100 nm to 300 nm.
9. The method of claim 8 , wherein said first absorption peak has an absorption parameter (k) greater than about 0.5 and said second absorption peak has an absorption parameter (k) from about 0.1 to about 0.7.
10. The method of claim 8 , wherein said planarization composition has an absorption parameter (k) less than 0.1 at a wavelength ranging from about 500 nm to about 600 nm.
11. The method of claim 1 , wherein said planarization layer covers two or more dies on said substrate.
12. A photolithography method comprising:
forming a planarization layer of a planarization composition on a substrate, wherein said planarization composition comprises at least one aromatic monomer and at least one non-aromatic monomer;
bringing a substantially flat surface into contact with said planarization layer on said substrate;
curing said planarization layer by exposing said planarization layer to a first radiation or by baking said planarization layer;
removing said substantially flat surface;
forming a photoresist layer on said planarization layer;
exposing said photoresist layer to a second radiation having an imaging wavelength;
developing said photoresist layer to form a relief image in said photoresist layer; and
transferring said relief image into said substrate, wherein said planarization composition contains silicon and said photoresist is a non-silicon containing resist.
13. The method of claim 1 , wherein said planarization composition is a non-silicon containing composition and said photoresist is a silicon containing resist.
14. The method of claim 1 , further comprising:
after said removing said substantially flat surface and before said forming said photoresist layer, forming a silicon anti-reflective coating (Si-ARC) layer on said planarization layer.
15. The method of claim 1 , further comprising:
after said removing said substantially flat surface and before said forming said photoresist layer, forming a hardmask layer on said planarization layer.
16. The method of claim 15 , further comprising:
after said forming said hardmask layer and before said forming said photoresist layer, forming an anti-reflective coating (ARC) layer on said hardmask layer.
17. The method of claim 15 , wherein said hardmask layer comprises LTO.
18. A planarization composition comprising at least one aromatic monomer and at least one non-aromatic monomer, wherein said at least one aromatic monomer has a weight concentration ranging from about 5% to about 35% of the total weight of said planarization composition.
19. The planarization composition of claim 18 , wherein said planarization composition having a refractive index (n) in the range from about 1.4 to about 1.8 and an absorption parameter (k) in the range from about 0.2 to about 0.5 at about 193 nm.
20. A planarization composition comprising at least one aromatic monomer and at least one non-aromatic monomer, wherein said at least one non-aromatic monomer has a weight concentration ranging from about 65% to about 95% of the total weight of said planarization composition.
21. The planarization composition of claim 18 , wherein said at least one aromatic monomer is selected from the group consisting of
22. A planarization composition comprising at least one aromatic monomer and at least one non-aromatic monomer, wherein said at least one non-aromatic monomer is selected from the group consisting of
23. The planarization composition of claim 18 , wherein said planarization composition further comprises at least one of a photoacid generator, a sensitizing agent, a surfactant, an adhesion agent and a base quencher.
24. The planarization composition of claim 18 , wherein said planarization composition comprises a dye which renders said planarization composition a first absorption peak in a wavelength range from about 900 nm to about 1200 nm and a second absorption peak in a wavelength range from about 100 nm to 300 nm.
25. The planarization composition of claim 24 , wherein said first absorption peak has an absorption parameter (k) greater than about 0.5 and said second absorption peak has an absorption parameter (k) from about 0.1 to about 0.7.
26. The planarization composition of claim 24 , wherein said planarization composition has an absorption parameter (k) less than 0.1 at a wavelength ranging from about 500 nm to about 600 nm.