In via formed phase change memory cell with recessed pillar heater

1. A method for fabricating a phase change memory device including a plurality of in via phase change memory cells, the method comprising:

depositing a conductive layer on an upper surface and a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry;

etching, using a photo resist layer, the conductive layer to form pillar heaters along the contact surface corresponding to each of the array of conductive contacts;

forming a dielectric layer along exposed areas of the substrate surrounding the pillar heaters;

forming a first cap layer on the dielectric layer;

forming an interlevel dielectric (ILD) layer on the first cap layer;

etching a via into the dielectric layer, each via corresponding to each of pillar heater such that an upper surface of each pillar heater is exposed within each via;

recessing each pillar heater;

depositing phase change material in each via on each recessed pillar heater;

recessing the phase change material within each via;

forming a top electrode within the via on the phase change material;

forming a second cap layer on the top electrode; and

etching the second cap layer to expose an upper surface of each top electrode and forming a top electrode connection layer over the exposed upper surface of each top electrode and the second cap layer.

2. The method of claim 1 , wherein the conductive layer comprises at least one of titanium nitride (TiN), tantalum nitride (TaN), tantalum-silicon nitride (TaSiN), tungsten (W) or carbon (C).

3. The method of claim 1 , wherein the dielectric layer comprises high density plasma (HDP) oxide.

4. The method of claim 1 , wherein the ILD layer is formed of silane oxide.

5. The method of claim 1 , wherein each pillar heater is recessed via a selective reactive ion etching operation.

6. The method of claim 5 , wherein a recessed amount of each pillar heater ranges from approximately 20 nanometers (nm) to approximately 100 nanometers (nm).

7. The method of claim 1 , wherein a recessed amount of the phase change material ranges from approximately 20 nanometers (nm) to approximately 200 nanometers (nm).

8. The method of claim 7 , wherein the recessed phase change material is of a predetermined thickness of ranging from approximately 80 nanometers (nm) to approximately 400 nanometers (nm).