IP Library › Granted Patent US 8,110,415
Granted Patent B2
US 8,110,415 · App. 12/062,055 · Granted Feb 7, 2012

Silicon based microchannel cooling and electrical package

Assignee: International Business Machines Corporation
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Quick Facts
Patent No.
US 8,110,415
App. No.
12/062,055
Granted
Feb 7, 2012
Kind
B2
Abstract

A chip package includes: a substrate; a plurality of conductive connections in contact with the silicon carrier; a silicon carrier in a prefabricated shape disposed above the substrate, the silicon carrier including: a plurality of through silicon vias for providing interconnections through the silicon carrier to the chip; liquid microchannels for cooling; a liquid coolant flowing through the microchannels; and an interconnect to one or more chips or chip stacks.

Claims (36)

1. A method for fabricating a chip package comprising:

prefabricating a silicon carrier to form both liquid cooling microchannels and through silicon vias for electrical interconnections to integrated circuits;

prefabricating a silicon substrate;

forming a dielectric layer between the silicon substrate and a layer of Tungsten (W);

affixing a first array of small, highly thermally conductive metallic balls between the silicon carrier and the silicon substrate;

placing the silicon carrier in contact with the first array of metallic balls;

affixing one or more chips or chip stacks to the silicon carrier using a second array of small, highly thermally conductive metallic balls;

wherein the metallic balls in the first and second arrays range in size from 2.0 to 20 microns in diameter for very high density interconnections;

forcing a liquid coolant through the liquid cooling microchannels;

introducing a plurality of through silicon vias to provide vertical electrical interconnections; and

connecting a cap over the chips using an epoxy-based adhesive.

2. The method of claim 1 wherein the electrical interconnections comprise a metallic conductor providing both electrical and thermal conduction.

3. The method of claim 1 further comprising:

placing a second silicon carrier above the integrated circuits for cooling a top and bottom of the integrated circuits, wherein the second silicon carrier comprises pre-formed through silicon vias for interconnections and liquid cooling microchannels for cooling.

4. The method of claim 3 wherein the through silicon vias comprise an integrated function of providing electrical voltage and providing decoupling capacitance.

5. The method of claim 3 further comprising:

testing chips, wafers, chip stacks and wafer stacks by providing power and cooling during test and burn in.

6. The method of claim 3 further comprising:

preheating the wafers for contact with reduced force by flowing a controlled heated liquid through the liquid cooling microchannels during probing or contact to a test head to heat said solder connections so that contact force during contact with said test head is reduced;

followed by cooling of the chip package during test.

7. The method of claim 3 further comprising testing wafers, chips, wafer stacks and chip stacks using electrical and thermal cooling means.

8. The method of claim 7 further comprising testing wafers, chips, wafer stacks and chip stacks using optical means.

9. The method of claim 3 further comprising:

preheating the chips for contact with reduced force by flowing a controlled heated liquid through the liquid cooling microchannels during probing or contact to a test head to heat said solder connections so that contact force during contact with said test head is reduced; and

followed by cooling of the chip package during test.

10. A method for fabricating a chip package comprising:

prefabricating a silicon carrier to form both liquid cooling microchannels and through silicon vias for electrical interconnections to integrated circuits;

prefabricating a silicon substrate;

forming a dielectric layer between the silicon substrate and a Copper (Cu) conductor layer;

affixing a first array of small, highly thermally conductive metallic balls between the silicon carrier and the silicon substrate;

placing the silicon carrier in contact with the first array of metallic balls;

affixing one or more chips or chip stacks to the silicon carrier using a second array of small, highly thermally conductive metallic balls;

wherein the metallic balls in the first and second arrays range in size from 2.0 to 20 microns in diameter for very high density interconnections;

forcing a liquid coolant through the liquid cooling microchannels;

introducing a plurality of through silicon vias to provide vertical electrical interconnections; and

connecting a cap over the chips using a silicon-based adhesive.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 12, 2021
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 056987/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES INC.
Reel/Frame 054636/0001 →
SECURITY AGREEMENT Recorded Nov 29, 2018
From: GLOBALFOUNDRIES INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 049490/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2015
From: GLOBALFOUNDRIES U.S. 2 LLC; GLOBALFOUNDRIES U.S. INC.
To: GLOBALFOUNDRIES INC.
Reel/Frame 036779/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2015
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: GLOBALFOUNDRIES U.S. 2 LLC
Reel/Frame 036550/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2008
From: KNICKERBOCKER, JOHN ULRICH; MAGERLEIN, JOHN H.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 020751/0661 →
Continuity (1)
Related Publication 20090251862A1 · Oct 8, 2009