Low temperature melt-processing of organic-inorganic hybrid
View Patent ↗The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
1. A process for preparing a melt-processed perovskite organic-inorganic hybrid material comprising:
applying onto a substrate a perovskite organic-inorganic hybrid material;
maintaining the substrate and/or the perovskite organic-inorganic hybrid material at a temperature above the melting point of the perovskite organic-inorganic hybrid material but below the decomposition temperature of the perovskite organic-inorganic hybrid material and the substrate for a period of time sufficient to form a uniform melt; and
cooling the substrate and/or uniform melt to an ambient temperature under conditions sufficient to form the melt-processed perovskite organic-inorganic hybrid material, wherein the perovskite organic- inorganic hybrid material have a fixed ratio of each organic component and inorganic component and wherein both the organic component and inorganic component manifest forces that enable a self assembly there between into a predictable arrangement.
2. The process of claim 1 , wherein the melt-processed perovskite organic-inorganic hybrid material is in a physical form selected from the group consisting of: a film, a sheet and a thick section.
3. The process of claim 2 , wherein the melt-processed perovskite organic-inorganic hybrid material is in the form of a film.
4. The process of claim 3 , wherein the melt-processed perovskite organic-inorganic hybrid material film comprises a single crystal of the perovskite organic-inorganic hybrid material.
5. The process of claim 3 , wherein the melt-processed perovskite organic-inorganic hybrid material is a polycrystalline material having a grain size equal to or greater than the dimensions between contacts in a semiconductor device.
6. The process of claim 1 , further comprising:
heating the substrate prior to applying the perovskite organic-inorganic hybrid material onto the substrate to a temperature above the melting point of the perovskite organic-inorganic hybrid material.
7. The process of claim 1 , further comprising:
heating the substrate and the perovskite organic-inorganic hybrid material to a temperature above the melting point of the perovskite organic inorganic hybrid material but below the decomposition temperature of the perovskite organic-inorganic hybrid material and the substrate.
8. The process of claim 1 , wherein the perovskite organic-inorganic hybrid material has a melting point below the melting point or decomposition temperature of the substrate.
9. The process of claim 1 , wherein the perovskite organic-inorganic hybrid material has a melting point which is below its decomposition temperature.
10. The process of claim 1 , wherein the cooling to an ambient temperature is carried out by exposing the uniform melt to a temperature gradient for controlling the grain size of the melt-processed perovskite organic-inorganic hybrid material.
11. The process of claim 1 , wherein the cooling to an ambient temperature is carried out at a rate from about 0.001° C./sec to about 1000° C./sec.
12. A process for preparing a laminated melt-processed perovskite organic-inorganic hybrid material, comprising:
applying onto a substrate a perovskite organic-inorganic hybrid material;
maintaining the substrate and/or the perovskite organic-inorganic hybrid material at a temperature above the melting point of the perovskite organic-inorganic hybrid material but below the decomposition temperature of the perovskite organic-inorganic hybrid material and the substrate for a period of time sufficient to form a uniform melt;
laminating a protective layer of a material on the uniform melt to produce a composite structure; and
cooling the composite structure to an ambient temperature under conditions sufficient to produce the laminated melt-processed perovskite organic-inorganic hybrid material.
13. The process of claim 12 , wherein the cooling to an ambient temperature is carried out at a rate from about 0.001° C./sec to about 1000° C./sec.
14. The process of claim 12 , wherein the cooling to an ambient temperature is carried out by exposing the uniform melt to a temperature gradient for controlling the grain size of the laminated melt-processed organic-inorganic hybrid material.
15. The process of claim 12 , wherein the laminated protective layer and the substrate are fabricated from the same material.
16. A process for preparing a melt-processed perovskite organic-inorganic hybrid material comprising:
melt-spinning a perovskite organic-inorganic hybrid material onto a substrate;
maintaining the substrate and/or the perovskite organic-inorganic hybrid material at a temperature above the melting point of the perovskite organic-inorganic hybrid material but below the decomposition temperature of the organic-inorganic hybrid material and the substrate for a period of time sufficient to form a uniform melt; and
cooling the substrate and/or uniform melt to an ambient temperature under conditions sufficient to form the melt-processed perovskite organic-inorganic hybrid material, wherein the perovskite organic- inorganic hybrid material have a fixed ratio of each organic component and inorganic component and wherein both the organic component and inorganic component manifest forces that enable a self assembly there between into a predictable arrangement.