Semiconductor device having decreased contact resistance
Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.
1. A semiconductor device comprising:
a semiconductor device structure comprising:
a silicide portion having a top silicide surface and an outer sidewall silicide surface; and
a semiconductor region of a silicon on insulator (SOI) substrate overlying a buried oxide layer of the SOI substrate, the semiconductor region having an outer sidewall semiconductor surface that is common to and continuous with the outer sidewall silicide surface; and
an electrically conductive contact, wherein the contact is electrically connected directly to the top silicide surface, is in direct physical contact with the top silicide surface, is electrically connected directly to the outer sidewall silicide surface, is in direct physical contact with the outer sidewall silicide surface, is electrically connected directly to the outer sidewall semiconductor surface, and is in direct physical contact with the outer sidewall semiconductor surface.
2. The semiconductor device in accordance with claim 1 wherein the semiconductor device structure further comprises a transistor structure including a source and a drain, and the silicide portion corresponds to the source or the drain.
3. A semiconductor device comprising:
a semiconductor device structure comprising a silicide portion having a top silicide surface and an outer sidewall silicide surface and a portion of silicon material overlying a buried oxide layer; and
an electrically conductive contact, wherein the contact includes two or more contact fingers, and wherein each of the two or more contact fingers is electrically connected directly to the top silicide surface, is in direct physical contact with the top silicide surface, is electrically connected directly to the outer sidewall silicide surface, is in direct physical contact with the outer sidewall silicide surface, is electrically connected directly to an outer sidewall surface of the portion of silicon material, and is in direct physical contact with the outer sidewall surface of the portion of silicon material, wherein the outer sidewall silicide surface and the outer sidewall surface of the portion of silicon material are common and continuous with each other.
4. The semiconductor device in accordance with claim 3 wherein the contact further includes intermediate portions thereof between each of the two or more contact fingers.
5. The semiconductor device in accordance with claim 3 , further comprising two or more trenches formed in the portion of silicon material in a direction substantially perpendicular to a longitudinal axis of the semiconductor device structure, wherein the two or more contact fingers extend into the two or more trenches.