Structure and method to make replacement metal gate and contact metal

1. A method of forming a semiconductor device comprising:

forming a first sacrificial stack and a second sacrificial stack on a semiconductor substrate, the first sacrificial stack and the second sacrificial stack each including a gate dielectric layer, wherein the gate dielectric layer comprises a high-k dielectric layer that is deposited in direct contact with the semiconductor substrate, and a metal nitride gate dielectric layer that is deposited directly on an upper surface of the high-k dielectric layer, wherein the first sacrificial stack is present in a first device region of the semiconductor substrate between an n-type source region and an n-type drain region, and the second sacrificial stack is present in a second device region of the semiconductor substrate between a p-type source region and a p-type drain region;

forming an interlevel dielectric having an upper surface that is coplanar with an upper surface of the first sacrificial stack and the second sacrificial stack;

removing an portion of the first sacrificial stack and the second sacrificial stack to expose the gate dielectric layer;

forming a p-type work function metal layer on the gate dielectric layer, wherein the forming of the p-type work function metal layer comprises depositing an etch stop metal nitride layer on the metal nitride gate dielectric layer in the first device region and the second device region; depositing the p-type work function metal layer on the etch stop metal nitride layer in the first device region and the second device region, and forming a thermal dielectric on the p-type work function metal layer in the first device region and the second device region;

forming a via to each of the n-type source region, the n-type drain region, the p-type source region and the p-type drain region;

removing the p-type work function metal layer from the first device region, wherein the p-type work function metal layer remains in the second device region;

forming a metal layer comprising titanium and aluminum on the gate dielectric layer in the first device region, the n-type source region, the n-type drain region, the p-type work function metal layer in the second device region, the p-type source region and the p-type drain region; and

forming a metal fill comprising aluminum on the metal layer comprising titanium and aluminum.

2. The method of claim 1 , wherein the first sacrificial stack and the second sacrificial stack further comprise a semiconductor-containing material that is present on the gate dielectric layer and a hard mask dielectric layer that is present on the semiconductor containing-material.

3. The method of claim 2 , wherein forming the first sacrificial stack and the second sacrificial stack further comprises:

forming a patterned etch mask atop the hard mask dielectric layer; and

etching the hard mask dielectric layer, the semiconductor-containing material and the gate dielectric layer to form the first sacrificial stack and the second sacrificial stack.

4. The method of claim 1 , wherein forming the p-type source region, the p-type drain region, the n-type source region, and the n-type drain region comprises:

forming a spacer on a sidewall of the first sacrificial stack and the second sacrificial stack; and

implanting dopants into the semiconductor substrate.

5. The method of claim 4 , wherein the forming of the interlevel dielectric having the upper surface that is coplanar with the upper surface of the first sacrificial stack and the second sacrificial stack comprises:

depositing the interlevel dielectric over the semiconductor substrate, the first sacrificial stack and the second sacrificial stack; and

planarizing the upper surface of the interlevel dielectric until the interlevel dielectric is removed from the upper surface of the first sacrificial stack and the second sacrificial stack.

6. The method of claim 2 , wherein the removing of the portion of the first sacrificial stack and the second sacrificial stack to expose the gate dielectric layer in each of the first device region and the second device region comprises:

etching the hard mask dielectric layer selective to the semiconductor-containing; and

etching the semiconductor containing-material selective to the gate dielectric layer.

7. The method of claim 1 , wherein the forming the via comprises:

forming a first etch mask atop the interlevel dielectric; and

etching the interlevel dielectric layer with an anisotropic etch.

8. The method of claim 1 , wherein the removing of the a p-type work function metal layer from the first device region comprises:

forming a second etch mask overlying the second device region; and

etching the p-type work function metal layer selective to the gate dielectric layer in the first device region.

9. The method of claim 1 , wherein the removing of the at least the portion of the p-type work function metal layer from the first device region comprises:

forming a second etch mask overlying the second device region;

etching the thermal dielectric selective to the p-type work function metal layer; and

etching the p-type work function metal layer selective to the etch stop metal nitride layer, wherein the p-type work function metal layer remains atop the metal nitride gate dielectric layer in the second device region.

10. The method of claim 1 , wherein the forming of the metal layer comprising titanium and aluminum on the gate dielectric in the first device region, the n-type source region, the n-type drain region, the p-type work function metal layer in the second device region, the p-type source region and the p-type drain region comprises:

removing the thermal dielectric from the p-type work function metal layer in the first device region;

removing the etch stop metal nitride layer that is the first device region after the p-type work function metal layer is removed from the first device region; and

depositing the metal layer comprising titanium and aluminum in direct contact with the p-type work function metal layer that is in the first device region in direct contact with metal nitride gate dielectric layer in the first device region, and in contact with the n-type source region, the n-type drain region, the p-type work function metal layer in the second device region, the p-type source region, and the p-type drain region.

11. The method of claim 10 further comprising planarizing the metal fill comprising aluminum until an upper surface of the metal fill comprising aluminum is coplanar with an upper surface of the interlevel dielectric.

12. The method of claim 10 , wherein the metal nitride gate dielectric layer is comprised of TiN and the metal nitride etch stop layer is comprised of TaN.