Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same

1. A structure of semiconductor device package, comprising:

a first substrate with a die metal pad, a first wiring circuit on a top surface of said first substrate and a second wiring circuit on a bottom surface of said first substrate;

a die disposed on said die metal pad;

a second substrate with a die opening window for receiving said die, a third wiring circuit on a top surface of said second substrate and a fourth wiring circuit on a bottom surface of said second substrate;

an adhesive material filled into the gap between a back side of said die, a bottom side of said second substrate and said top surface of said first substrate, and between a side wall of said die and a side wall of said die opening window; and

conductive through holes formed by passing through said first substrate and said second substrate to connect said third and said fourth wiring circuit of said second substrate and said first and said second wiring circuit of said first substrate.

2. The structure of claim 1 , further comprising a first dielectric layer formed on said die and said second substrate, wherein said first dielectric layer has first openings for via formed therein to connect die metal contact (I/O) pad of said die and said first wiring circuit, and redistributed metal layers formed on said first dielectric layer to connect said die metal contact (I/O) pad through via.

3. The structure of claim 2 , further comprising a second dielectric layer formed on said first dielectric layer and said redistributed metal layers, wherein said second dielectric layer has second openings for under bump metallurgy formed therein to connect said redistributed metal layers, and solder metal pads formed on said under bump metallurgy.

4. The structure of claim 3 , further comprising a third dielectric layer formed under bottom side of said first substrate and said fourth wiring circuit, wherein said third dielectric layer has third openings for under bump metallurgy formed therein to connect said fourth wiring circuit, and solder metal pads formed on said under bump metallurgy.

5. The structure of claim 4 , further comprising conductive bumps coupled to said solder metal pads.

6. The structure of claim 3 , further comprising plurality of CSP, WL-CSP, BGA, flip chip and passive components coupled to said solder metal pads through conductive bumps.

7. The structure of claim 1 , wherein the material of said first and second substrate includes epoxy type FR5 or FR4.

8. The structure of claim 1 , wherein the material of said first and second substrate includes BT, silicon, PCB (print circuit board) material, glass, ceramic or alloy metal.

9. The structure of claim 1 , further comprising a third substrate with a second die embedded inside stacking on the first substrate with said die embedded inside.

10. The structure of claim 1 , wherein said adhesive material includes elastic core paste material to act as stress buffer.

11. A method for forming semiconductor device package comprising:

providing a tool with alignment key and temporary pattern glues formed on a top surface of said tool;

aligning and attaching a second substrate on said temporary pattern glues by said alignment key;

aligning and attaching a die on said temporary pattern glues by said alignment key, and said die disposed inside a die opening window of said second substrate;

printing an adhesion material from a back side of said die and a bottom side of said second substrate;

bonding a first substrate on said adhesion material to form a panel substrate, wherein said adhesive material is filled into the gap between a back side of said die, a bottom side of said substrate and a top surface of said first substrate, and between a side wall of said die and a side wall of said die opening window;

separating said panel substrate from said tool after releasing said temporary pattern glues, wherein said releasing temporary pattern glues from said tool is performed by a thin mechanical knife; and

forming conductive through holes to connect a first top wiring and a first bottom wiring of said second substrate and a second top wiring and a second bottom wiring of said first substrate.

12. The method of claim 11 , further comprising forming at least one built up layers on top surface of said die and said second substrate.

13. The method of claim 11 , further comprising forming at least one built up layers on bottom surface of said first substrate.

14. The method of claim 11 , wherein said temporary pattern glues with patterns to attached bonding pads of said die and via pads of said second substrate.

15. The method of claim 11 , wherein said alignment key including single die alignment key and alignment target for said second substrate.

16. The method of claim 11 , wherein said die attached on said temporary pattern glues is performed by a pick and place fine alignment process.

17. The method of claim 11 , wherein said separating panel substrate is performed under the high temperature environment.