Reflection type photomask blank, manufacturing method thereof, reflection type photomask, and manufacturing method of semiconductor device
A reflection type photomask blank includes: a substrate; a multilayer reflection film formed on the substrate for reflecting exposure light; a protection film formed on the multilayer reflection film for protecting the multilayer reflection film; an absorber layer for absorbing the exposure light on the protection film; and a shock absorbing film formed between the absorber layer and the protection film, with a resistance to etching which is performed when an exposure transfer pattern of the absorber layer is formed, in which the protection film is: a compound including Zr and Si; a compound including Zr, Si, and at least either one of O and N; or a single element or a compound including at least any one of Ru, C, and Y.
1. A reflection type photomask blank, comprising:
a substrate;
a multilayer reflection film, formed on the substrate, to reflect exposure light;
an absorber layer to absorb the exposure light; and
a dual-use film layer formed between the absorber layer and the multilayer reflection film, wherein
the dual-use film comprises a dual-use film upper layer and a dual-use film lower layer,
the dual-use film upper layer and the dual-use film lower layer are ZrSiO film and ZrSi film, ZrSiN film and ZrSi film, or C film and ZrSi film, respectively, and
a thickness of the dual-use film lower layer is 3.0 to 5.0 nm.
2. The reflection type photomask blank according to claim 1 , wherein
the dual-use film comprises a plurality of the dual-use film upper layers and the dual-use film lower layers; and
a topmost layer of the dual-use film upper layers has an etching rate of 1/20 or less than that of the absorber layer when the absorber layer is etched to form an exposure transfer pattern.
3. The reflection type photomask blank according to claim 1 , wherein
the dual-use film comprises a plurality of the dual-use film upper layers and the dual-use film lower layers;
an uppermost layer of the dual-use film upper layers in a thickness direction of the substrate comprises: a compound including Zr, Si, and at least either one of O and N, and
a lowermost layer of the dual-use film lower layers in the thickness direction of the substrate comprises a compound including Zr and Si.
4. The reflection type photomask blank according to claim 1 , wherein
the dual-use film comprises a plurality of the dual-use film upper layers and the dual-use film lower layers,
an uppermost layer of the dual-use film upper layers in a thickness direction of the substrate comprises: a compound including Zr, Si, and at least either one of O and N, and
a lowermost layer of the dual-use film lower layers in the thickness direction of the substrate comprises a compound including Zr and Si.
5. A reflection type photomask, wherein an exposure transfer pattern is formed by etching an absorber layer of the reflection type photomask blank according to claim 1 .
6. A manufacturing method of a semiconductor device, comprising transferring the pattern of the absorber layer of the reflection type photomask according to claim 5 onto a resist layer provided on a semiconductor substrate by irradiating extreme ultraviolet light as the exposure light onto the reflection type photomask to expose reflected light reflected on the multilayer reflection film of the reflection type photomask onto the resist layer.
7. A manufacturing method of a reflection type photomask blank provided with: a substrate; a multilayer reflection film for reflecting exposure light; and an absorber layer for absorbing the exposure light, comprising:
forming a multilayer reflection film on the substrate;
laminating a dual-use film on the multilayer reflection film; and
forming the absorber layer on the dual-use films, wherein
the dual-use film comprises a dual-use film upper layer and a dual-use film lower layer,
the dual-use film upper layer and the dual-use film lower layer are ZrSiO film and ZrSi film, ZrSiN film and ZrSi film, or C film and ZrSi film, respectively, and
a thickness of the dual-use film lower layer is 3.0 to 5.0 nm.
8. The manufacturing method of a reflection type photomask blank according to claim 7 , wherein
the dual-use film comprises a plurality of the dual-use film upper layers and the dual-use film lower layers,
an uppermost layer of the dual-use film upper layers in a thickness direction of the substrate comprises: a compound including Zr and Si, and at least either one of O and N, and
a lowermost layer of the dual-use film lower layers in the thickness direction of the substrate comprises a compound including Zr and Si.
9. A reflection type photomask, wherein an exposure transfer pattern is formed by etching an absorber layer of a reflection type photomask blank which is manufactured with the manufacturing method of a reflection type photomask blank according to claim 7 .
10. A manufacturing method of a semiconductor device, comprising transferring the pattern of the absorber layer of the reflection type photomask according to claim 9 onto a resist layer provided on a semiconductor substrate by irradiating extreme ultraviolet light as the exposure light onto the reflection type photomask to expose reflected light reflected on the multilayer reflection film of the reflection type photomask onto the resist layer.