System and method for test structure on a wafer

1. A test structure for testing an integrated circuit, wherein the test structure and the integrated circuit are manufactured on a same substrate material and the testing being conducted is in a temperature-controlled environment, the test structure comprising:

a top structure positioned above the integrated circuit, the top structure being characterized by a first surface area, the top structure including a first metal material occupying less than 60% of the first surface area;

a bottom structure positioned below the integrated circuit, the bottom structure being characterized by a second surface area, the bottom structure including a first silicon material, the first silicon material occupying substantially all of the second surface area;

a first side structure positioned between the top structure and the bottom structure and located next to a first side of the integrated circuit, the first side structure being characterized by a first height, the first side structure including a second metal material; and

a second side structure positioned between the top structure and the bottom structure and located next to a second side of the integrated circuit, the second side structure being characterized by a second height, the second side structure including a third metal material; wherein the top structure and the bottom structure are not physically and electrically connected to each other.

2. The test structure of claim 1 wherein the first metal material comprises a first terminal and a second terminal, the first terminal and the second terminal being configured to conduct a current through the first metal material to generate heat.

3. The test structure of claim 1 wherein the first height is substantially equal to the second height.

4. The test structure of claim 1 wherein the first side structure further comprises one or more vias.

5. The test structure of claim 1 wherein:

the first side is characterized by a first temperature characteristic; and

the second side is characterized by a second temperature characteristic;

the first temperature characteristic being substantially the same as the second temperature characteristic.

6. The test structure of claim 1 wherein:

the top structure is characterized by a third temperature characteristic; and

the bottom structure is characterized by a fourth temperature characteristic;

the third temperature characteristic being substantially the same as the fourth temperature characteristic.

7. The test structure of claim 1 wherein the first metal material comprises a geometric shape that is characterized by a temperature coefficient of resistance.

8. The test structure of claim 1 wherein the integrated circuit is characterized by a channel length of less than 130 nanometers.

9. The test structure of claim 1 wherein the first silicon material comprises a polysilicon material.

10. The test structure of claim 1 wherein the first metal material is characterized by a zigzag shape.

11. The test structure of claim 1 wherein the top structure further comprises a metal resistor.

12. The test structure of claim 1 wherein the top structure further comprises a copper-based resistor.

13. The test structure of claim 1 wherein the first metal material is characterized by a serpentine shape.

14. The test structure of claim 1 wherein each of the first and second side structures comprises one or more metal layers being interconnected by one or more vias.

15. The test structure of claim 1 wherein the top structure has a resistance that is substantially equal to a resistance of the bottom structure.

16. The test structure of claim 1 wherein the test structure has a temperature characteristic substantially equal to a temperature characteristic of the integrated circuit.

17. The test structure of claim 1 wherein the first surface area is substantially equal to the second surface area.

18. The test structure of claim 1 wherein the first and second side structures protect the integrated circuit from moisture absorption.