Single-crystalline silicon alkaline texturing with glycerol or ethylene glycol additives
Alternative additives that can be used in place of isopropyl alcohol in aqueous alkaline etchant solutions for texturing a surface of a single-crystalline silicon substrate are provided. The alternative additives do not have volatile constituents, yet can be used in an aqueous alkaline etchant solution to provide a pyramidal shaped texture surface to the single-crystalline silicon substrate that is exposed to such an etchant solution. Also provided is a method of forming a textured silicon surface. The method includes immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on the single-crystalline silicon substrate. The etchant solution includes an alkaline component, silicon (etched into the solution as a bath conditioner) and glycerol or ethylene glycol as an additive. The textured surface of the single-crystalline silicon substrate has (111) faces that are now exposed.
1. A method of forming a textured silicon surface, said method comprising immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on said single-crystalline silicon substrate, wherein the etchant solution comprises an aqueous alkaline etchant solution comprising glycerol as an additive.
2. The method of claim 1 , wherein said glycerol is present in said aqueous alkaline etchant solution in a concentration of from 3 weight percent to 15 weight percent.
3. The method of claim 1 , wherein said glycerol is present in said aqueous alkaline etchant solution in a concentration of from 5 weight percent to 10 weight percent.
4. The method of claim 1 , wherein said aqueous alkaline etchant solution further comprises potassium hydroxide (KOH), sodium hydroxide (NaOH), choline hydroxide, tetramethylammonium hydroxide (TMAH) or tetraethylammonium hydroxide (TEAH) as an alkaline component.
5. The method of claim 4 , wherein said alkaline component is present in said aqueous alkaline etchant solution in a concentration of from 1 weight percent to 5 weight percent.
6. The method of claim 4 , wherein said aqueous alkaline etchant solution further comprises silicon.
7. The method of claim 6 , wherein said silicon is present in said aqueous alkaline etchant solution in a concentration of from 0.3 weight percent to 1.5 weight percent.
8. The method of claim 1 , wherein said immersing is performed at a temperature from 70° C. to 90° C.
9. The method of claim 1 , wherein said single-crystalline silicon substrate has a (100) oriented surface prior to immersing.
10. The method of claim 1 , wherein said single-crystalline silicon substrate is a component of a solar cell.
11. A method of forming a textured silicon surface, said method comprising immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on said single-crystalline silicon substrate, wherein the etchant solution comprises an aqueous alkaline etchant solution comprising ethylene glycol as an additive.
12. The method of claim 11 , wherein said ethylene glycol is present in said aqueous alkaline etchant solution in a concentration of from 3 weight percent to 15 weight percent.
13. The method of claim 11 , wherein said ethylene glycol is present in said aqueous alkaline etchant solution in a concentration of from 5 weight percent to 10 weight percent.
14. The method of claim 11 , wherein said aqueous alkaline etchant solution further comprises potassium hydroxide (KOH), sodium hydroxide (NaOH), choline hydroxide, tetramethylammonium hydroxide (TMAH) or tetraethylammonium hydroxide (TEAH) as an alkaline component.
15. The method of claim 14 , wherein said alkaline component is present in said aqueous alkaline etchant solution in a concentration of from 1 weight percent to 5 weight percent.
16. The method of claim 14 , wherein said aqueous alkaline etchant solution further comprises silicon.
17. The method of claim 16 , wherein said silicon is present in said aqueous alkaline etchant solution in a concentration of from 0.3 weight percent to 1.5 weight percent.
18. The method of claim 11 , wherein said immersing is performed at a temperature from 70° C. to 90° C.
19. The method of claim 11 , wherein said single-crystalline silicon substrate has a (100) oriented surface prior to immersing.
20. The method of claim 11 , wherein said single-crystalline silicon substrate is a component of a solar cell.
21. An aqueous alkaline etchant solution for texturing a surface of a single-crystalline silicon substrate, said aqueous alkaline etchant solution comprising 1 weight percent to 5 weight percent of an alkaline, 0.3 weight percent to 1.5 weight percent of silicon, 3 weight percent to 15 weight percent of an additive and the remainder water, wherein said alkaline is selected from the group consisting of potassium hydroxide (KOH), sodium hydroxide (NaOH), choline hydroxide, tetramethylammonium hydroxide (TMAH) and tetraethylammonium hydroxide (TEAH), and said additive is selected from the group consisting of glycerol and ethylene glycol.
22. The aqueous alkaline etchant solution of claim 21 , wherein said additive is glycerol.
23. The aqueous alkaline etchant solution of claim 21 , wherein said additive is ethylene glycol.