IP Library Granted Patent US 8,466,539
Granted Patent B2
US 8,466,539 · App. 13/334,006 · Granted Jun 18, 2013

MRAM device and method of assembling same

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Quick Facts
Patent No.
US 8,466,539
App. No.
13/334,006
Granted
Jun 18, 2013
Kind
B2
Abstract

A method of assembling a magnetoresistive random access memory (MRAM) device includes providing a substrate having an opening. A tape is applied to a surface of the substrate and a first magnetic shield is placed onto the tape and within the substrate opening. An adhesive is applied between the first magnetic shield and the substrate to attach the first magnetic shield to the substrate. An MRAM die is attached to the first magnetic shield and bond pads of the MRAM die are connected to pads on the substrate with wires. A second magnetic shield is attached to a top surface of the MRAM die. An encapsulating material is dispensed onto the substrate, the MRAM die, the second magnetic shield and part of the first magnetic shield, cured, and then the tape is removed. Solder balls then may be attached to the substrate.

Claims (45)

1. A method of assembling a semiconductor device, comprising the steps of:

providing a substrate having a centrally located opening therein;

applying a tape to a first major surface of the substrate;

placing a first magnetic shield onto the tape and within the substrate opening;

applying an adhesive between the first magnetic shield and the substrate so that the first magnetic shield is attached to the substrate; and

removing the tape.

2. The method of assembling a semiconductor device of claim 1 , wherein the substrate comprises a multi-layer printed wiring board.

3. The method of assembling a semiconductor device of claim 1 , further comprising curing the adhesive.

4. The method of assembling a semiconductor device of claim 1 , wherein the first magnetic shield comprise a Ni/Fe slug.

5. The method of assembling a semiconductor device of claim 1 , further comprising:

attaching a semiconductor die to a first major surface of the first magnetic shield, wherein a bottom surface of the die is attached to the first major surface of the first magnetic shield;

attaching a second magnetic shield to a top surface of the semiconductor die; and

dispensing an encapsulating material onto a second major surface, opposite the first major surface, of the substrate such that the encapsulating material covers the semiconductor die and the first and second magnetic shields.

6. The method of assembling a semiconductor device of claim 5 , further comprising electrically connecting bond pads of the semiconductor die to corresponding pads on the second major surface of the substrate.

7. The method of assembling a semiconductor device of claim 6 , wherein the electrically connecting step comprises connecting the bond pads of the semiconductor die to the substrate pads with wires using a wire bonding process.

8. The method of assembling a semiconductor device of claim 5 , further comprising attaching a plurality of solder balls to the first major surface of the substrate to facilitate external electrical communication with the semiconductor die.

9. The method of assembling a semiconductor device of claim 5 , wherein the semiconductor die comprises a magnetoresistive random access memory (MRAM) device.

10. A semiconductor device packaged in accordance with the method of claim 5 .

11. A semiconductor device, comprising:

a substrate having a centrally located opening therein;

a first magnetic shield disposed within the opening, wherein the first magnetic shield is attached to the substrate via an adhesive material;

a semiconductor die attached to a top surface of the first magnetic shield and electrically coupled to the substrate;

a second magnetic shield attached to a top surface of the semiconductor die; and

an encapsulating material covering a first major surface of the substrate, the semiconductor die, the second magnetic shield, and a portion of the top surface of the first magnetic shield.

12. The semiconductor device of claim 11 , wherein the semiconductor die comprises a magnetoresistive random access memory (MRAM) die.

13. The semiconductor device of claim 11 , wherein the first and second magnetic shields comprise Ni/Fe slugs.

14. The semiconductor device of claim 11 , wherein the encapsulating material comprises epoxy.

15. The semiconductor device of claim 11 , wherein the substrate comprises a multi-layered printed wiring board.

16. The semiconductor device of claim 11 , further comprising a plurality of solder balls attached to a bottom surface of the substrate, wherein the solder balls facilitate external electrical communication with the die.

17. A method of assembling a magnetoresistive random access memory (MRAM) device, comprising the steps of:

providing a substrate having a centrally located opening therein;

applying a tape to a first major surface of the substrate;

placing a first magnetic shield onto the tape and within the substrate opening;

applying an adhesive between the first magnetic shield and the substrate such that the first magnetic shield is attached to the substrate;

curing the adhesive;

attaching a semiconductor die to a top surface of the first magnetic shield;

electrically connecting bond pads of the MRAM die to corresponding pads on a second major surface, opposite to the first major surface, of the substrate with wires using a wire bonding process;

attaching a second magnetic shield to a top surface of the MRAM die;

dispensing an encapsulating material onto the second major surface of the substrate, the MRAM die, the second magnetic shield and a portion of the top surface of the first magnetic shield;

curing the encapsulating material;

removing the tape; and

attaching solder balls to the first major surface of the substrate.

18. The method of assembling a MRAM device of claim 17 , wherein the first and second magnetic shields comprise Ni/Fe slugs.

19. The method of assembling a MRAM device of claim 17 , wherein the substrate comprises a multi-layer printed wiring board.

20. The method of assembling a MRAM device of claim 17 , wherein the solder balls comprise controlled collapse chip connection (C4) solder balls.

Assignments (33)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
RELEASE OF SECURITY INTEREST Recorded May 29, 2017
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP USA, INC. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 042610/0451 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 29, 2017
From: NXP USA, INC.
To: VLSI TECHNOLOGY LLC
Reel/Frame 042374/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0447 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0439 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0379 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 7, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 7, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 7, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2011
From: LI, JUN; WANG, JIANHONG; XU, XUESONG; YAO, JINZHONG; YU, WANMING
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 027430/0250 →