Pad bonding employing a self-aligned plated liner for adhesion enhancement
Two substrates are brought together and placed in a plating bath. In one embodiment, a conductive material is plated in microscopic cavities present at the interface between a first metal pad and a second metal pad to form at least one interfacial plated metal liner portion that adheres to a surface of the first metal pad and a surface of the second metal pad. In another embodiment, at least one metal pad is recessed relative to a dielectric surface before being brought together. The two substrates are placed in a plating bath and a conductive material is plated in the cavity between the first metal pad and the second metal pad to form a contiguous plated metal liner layer that adheres to a surface of the first metal pad and a surface of the second metal pad.
1. A method of forming a bonded structure, said method comprising:
bringing a first substrate and a second substrate into contact with each other, wherein a first surface of a first metal pad embedded in said first substrate contacts a second surface of a second metal pad embedded in said second substrate; and
forming at least one interfacial metal liner portion directly on said first surface and said second surface by plating a conductive material, whereby said at least one interfacial metal liner portion provides adhesion between said first metal pad and said second metal pad, wherein said at least one interfacial metal liner portion is formed by filling at least one cavity at an interface between said first metal pad and said second metal pad, and said at least one cavity has a variable thickness that does not exceed the sum of a first microscopic variation in surface height in said at least one first metal pad and a second microscopic variation in surface height in said at least one second metal pad.
2. The method of claim 1 , wherein said at least one interfacial metal liner portion is formed in a plating bath by electroplating or electroless plating.
3. The method of claim 1 , wherein a first dielectric material layer located within said first substrate contacts a second dielectric material layer located within said second substrate.
4. The method of claim 3 , wherein said plating deposits said conductive material selectively on metallic surfaces and does not deposit said conductive material on dielectric surfaces.
5. The method of claim 1 , wherein said forming of said at least one interfacial metal liner portion comprises forming an unfilled cavity within said at least one interfacial metal liner portion, wherein said unfilled cavity includes vacuum or ambient gas trapped therein.
6. The method of claim 1 , wherein said at least one interfacial metal liner is not formed in a region in which said first surface and said second surface are in contact with each other at a microscopic level.
7. The method of claim 1 , wherein an extent of said at least one interfacial metal liner is limited within areas in which said first surface and said second surface are not in contact with each other at a microscopic level.
8. The method of claim 1 , further comprising:
forming a first diffusion barrier structure within said first substrate prior to brining said first and second substrates into contact, wherein said first metal pad is formed on said first diffusion barrier structure; and
forming a second diffusion barrier structure within said second substrate prior to brining said first and second substrates into contact, wherein said second metal pad is formed on said second diffusion barrier structure.
9. A method of forming a bonded structure, said method comprising:
recessing a first surface of a first metal pad embedded in a first dielectric material layer of a first substrate, whereby said first surface is recessed relative to a first dielectric surface of said first dielectric material layer;
bringing said first substrate and a second substrate into contact with each other, wherein said first dielectric surface contacts a second dielectric surface of a second dielectric material layer embedded in said second substrate; and
forming a contiguous metal liner layer contacting said first surface and a second surface of a second metal pad in said second substrate, whereby said contiguous metal liner layer provides adhesion between said first metal pad and said second metal pad, wherein said second surface of said second metal pad is coplanar with said second dielectric surface.
10. The method of claim 9 , wherein said contiguous metal liner layer is formed in a plating bath by electroplating or electroless plating.
11. The method of claim 9 , wherein said contiguous metal liner layer has a periphery that vertically coincides with a periphery of said one of said at least one first metal pad.
12. The method of claim 9 , further comprising recessing said second surface of said second metal pad relative to said second dielectric surface prior to bringing said first and second substrates into contact.
13. The method of claim 12 , wherein said contiguous metal liner layer is formed on both sides of a plane at which said second dielectric material layer contacts said first dielectric material layer.
14. The method of claim 13 , wherein said contiguous metal liner layer is deposited selectively on metallic surfaces and is not deposited on dielectric surfaces during said forming of said contiguous metal liner layer.
15. The method of claim 13 , wherein said contiguous metal liner layer has a first periphery that vertically coincides with a periphery of said first metal pad, and said contiguous metal liner layer has a second periphery that vertically coincides with a periphery of said second metal pad.
16. The method of claim 15 , wherein said first periphery and said second periphery do not vertically coincide with each other.
17. The method of claim 13 , wherein said contiguous metal liner layer has a periphery that vertically coincides with a periphery of said first metal pad and vertically coincides with a periphery of said second metal pad.
18. A method of forming a bonded structure, said method comprising:
bringing a first substrate and a second substrate into contact with each other, wherein a first surface of a first metal pad embedded in said first substrate contacts a second surface of a second metal pad embedded in said second substrate; and
forming at least one interfacial metal liner portion directly on said first surface and said second surface by plating a conductive material, whereby said at least one interfacial metal liner portion provides adhesion between said first metal pad and said second metal pad, wherein said at least one interfacial metal liner is not formed in a region in which said first surface and said second surface are in contact with each other at a microscopic level.
19. The method of claim 18 , wherein said forming of said at least one interfacial metal liner portion comprises forming an unfilled cavity within said at least one interfacial metal liner portion, wherein said unfilled cavity includes vacuum or ambient gas trapped therein.
20. The method of claim 18 , wherein an extent of said at least one interfacial metal liner is limited within areas in which said first surface and said second surface are not in contact with each other at a microscopic level.