Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
1. A method of fabricating a spin-current switched magnetic memory element, said method comprising:
providing a wafer having a bottom electrode;
forming a plurality of layers, such that interfaces between said plurality of layers are formed in situ, said plurality of layers comprising:
a plurality of magnetic layers, at least one of said plurality of magnetic layers possessing a perpendicular magnetic anisotropy component and comprising a spin-current-switchable magnetic moment; and
at least one barrier layer formed adjacent to said plurality of magnetic layers;
lithographically defining a pillar structure from said plurality of layers; and
forming a top electrode on said pillar structure.
2. The method according to claim 1 , wherein said at least one barrier layer comprises a plurality of barrier layers which are alternately formed with said plurality of magnetic layers.
3. A spin-current switched magnetic memory element, comprising:
first and second leads;
a pillar formed between said first and second leads;
a plurality of magnetic layers, at least one of said plurality of magnetic layers possessing a perpendicular magnetic anisotropy component and comprising a spin-current-switchable magnetic moment, all magnetic moments in said magnetic layers being substantially collinear in a rest state; and
at least one barrier layer formed in said pillar adjacent to said plurality of magnetic layers.
4. A magnetic random access memory (MRAM) array comprising a plurality of magnetic spin-current switched magnetic memory elements according to claim 3 .
5. The spin-current switched magnetic memory element according to claim 3 , wherein said perpendicular magnetic anistropy component has a magnitude sufficient to at least substantially offset an easy-plane demagnetization effect.
6. The spin-current switched magnetic memory element according to claim 5 , wherein a magnetic moment of one of said plurality of magnetic layers is most efficiently excitable or switchable under spin current excitation.
7. The method according to claim 1 , wherein said perpendicular magnetic anistropy component has a magnitude sufficient to at least substantially offset an easy-plane demagnetization effect, such that a magnetic moment of one of said plurality of magnetic layers comprises resting out of the layer plane and is most efficiently excitable or switchable under spin current excitation.
8. The method according to claim 1 , wherein said perpendicular magnetic anistropy component has a magnitude sufficient to at least substantially offset an easy-plane demagnetization effect.
9. The method according to claim 8 , wherein a magnetic moment of one of said plurality of magnetic layers is resting out of the layer plane.
10. The method according to claim 8 , wherein a magnetic moment of one of said plurality of magnetic layers is most efficiently excitable or switchable under spin current excitation.
11. The method according to claim 1 , wherein a magnetic moment of one of said plurality of magnetic layers comprises one of resting out of the layer plane and is most efficiently excitable or switchable under spin current excitation.