Fin structure formation including partial spacer removal
A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask; partially removing the partially exposed first spacer; and etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate.
1. A method of forming a semiconductor device, comprising:
forming a mandrel on top of a substrate;
forming a first spacer adjacent to the mandrel on top of the substrate;
forming a second spacer on top of the substrate simultaneously with forming the first spacer;
forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask and the second spacer is fully exposed by the cut mask;
partially removing the partially exposed first spacer, and fully removing the second spacer during the partial removal of the partially exposed first spacer; and
etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate.
2. The method of claim 1 , further comprising:
removing the cut mask before removing the mandrel; and
removing the mandrel after partially removing the first spacer and before forming the fin structure corresponding to the partially removed first spacer in the substrate.
3. The method of claim 1 , wherein the mandrel comprises polysilicon or amorphous carbon, wherein the first spacer comprises nitride, a metal, or oxide, and wherein the cut mask comprises photoresist or spin-on-glass.
4. The method of claim 1 , wherein partially removing the partially exposed first spacer comprises isotropically etching the partially exposed first spacer.
5. The method of claim 1 , further comprising forming a hardmask over the substrate before forming the mandrel, wherein the mandrel and the first spacer are formed on the hardmask.
6. The method of claim 5 , wherein the hardmask comprises oxide or nitride.
7. The method of claim 5 , wherein forming the fin structure corresponding to the partially removed first spacer in the substrate comprises:
etching the hardmask using the partially removed first spacer as a mask; and
etching the substrate using the etched hardmask as a mask to form the fin structure in the substrate.
8. The method of claim 1 , wherein the substrate comprises a metal, and wherein the fin structure comprises a conductive line comprising the metal.
9. The method of claim 1 , wherein the substrate comprises a gate material, and wherein the fin structure comprises a gate.
10. The method of claim 1 , wherein the substrate comprises a bulk silicon substrate or a silicon-on-insulator (SOI) substrate, and the fin structure comprises silicon.
11. The method of claim 1 , wherein the substrate comprises an isolation region comprising a dielectric material, and wherein the fin structure comprises the dielectric material.
12. A method of forming a semiconductor device, comprising:
forming a mandrel on top of a substrate;
forming a first spacer adjacent to the mandrel on top of the substrate and forming a second spacer on top of the substrate simultaneously with forming the first spacer;
forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask and forming the cut mask such that the second spacer is fully covered by the cut mask;
partially removing the partially exposed first spacer; and
etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate;
wherein a width of the partially removed first spacer is the same as a width of the second spacer and a height of the partially removed first spacer is less than a height of the second spacer.