Edge protection of bonded wafers during wafer thinning
A method of edge protecting bonded semiconductor wafers. A second semiconductor wafer and a first semiconductor wafer are attached by a bonding layer/interface and the second semiconductor wafer undergoes a thinning process. As a part of the thinning process, a first protective layer is applied to the edges of the second and first semiconductor wafers. A third semiconductor wafer is attached to the second semiconductor wafer by a bonding layer/interface and the third semiconductor wafer undergoes a thinning process. As a part of the thinning process, a second protective layer is applied to the edges of the third semiconductor wafer and over the first protective layer. The first, second and third semiconductor wafers form a wafer stack. The wafer stack is diced into a plurality of 3D chips while maintaining the first and second protective layers.
1. A method of edge protecting bonded semiconductor wafers comprising:
providing a second semiconductor wafer having a first surface and a second surface opposite to the first surface;
attaching the first surface of the second semiconductor wafer to a first semiconductor wafer by using a bonding layer/interface;
thinning the second semiconductor wafer from the second surface to a first predetermined dimension;
forming a first protective layer to entirely cover the second semiconductor wafer and at least a portion of an edge of the first semiconductor wafer;
thinning the second semiconductor wafer from the second surface to a second predetermined dimension while maintaining the first protective layer on an edge only of the second semiconductor wafer and the edge only of the first semiconductor wafer;
providing a third semiconductor wafer having a first surface and a second surface opposite to the first surface;
attaching the first surface of the third semiconductor wafer to the second surface of the second semiconductor wafer by using a bonding layer/interface, the third semiconductor wafer, second semiconductor wafer and first semiconductor wafer forming a semiconductor wafer stack;
thinning the third semiconductor wafer from the second surface to a third predetermined dimension;
forming a second protective layer to entirely cover the third semiconductor wafer and the first protective layer;
thinning the third semiconductor wafer to a fourth predetermined dimension while maintaining the second protective layer on an edge only of the third semiconductor wafer and on the first protective layer; and
dicing the semiconductor wafer stack with the maintained second protective layer and first protective layer into a plurality of three dimensional chip stacks, each of the three dimensional chip stacks being devoid of the second protective layer and the first protective layer.
2. The method of claim 1 wherein the first predetermined dimension equals the third predetermined dimension and the second predetermined dimension equals the fourth predetermined dimension.
3. The method of claim 1 wherein thinning the second semiconductor wafer to a second predetermined dimension and thinning the third semiconductor wafer to a fourth predetermined dimension is by a wet etching process.
4. The method of claim 1 further comprising a first edge trimming process to trim a lateral dimension of the second semiconductor wafer and a second edge trimming process to trim a lateral dimension of the third semiconductor wafer.
5. The method of claim 1 wherein the first protective layer and the second protective layer each comprise a silicon nitride, silicon carbide or silicon carbonitride (NBLOK).
6. The method of claim 1 wherein the first protective layer entirely covers the edge of the first semiconductor wafer.
7. A method of edge protecting bonded semiconductor wafers comprising:
providing a second semiconductor wafer having a first surface and a second surface opposite to the first surface;
attaching the first surface of the second semiconductor wafer to a first semiconductor wafer by using a bonding layer/interface, the second semiconductor wafer and the first semiconductor wafer forming a semiconductor wafer stack;
thinning the second semiconductor wafer from the second surface to a first predetermined dimension;
forming a first protective layer to entirely cover the second semiconductor wafer and at least a portion of an edge of the first semiconductor wafer;
thinning the second semiconductor wafer from the second surface to a second predetermined dimension while maintaining the first protective layer on an edge only of the second semiconductor wafer and the edge only of the first semiconductor wafer;
bonding an additional semiconductor wafer to, and become part of, the semiconductor wafer stack according to the following process:
providing an additional semiconductor wafer having a first surface and a second surface opposite to the first surface;
attaching the first surface of the additional semiconductor wafer to the second surface of a preceding semiconductor wafer by using a bonding layer/interface;
thinning the additional semiconductor wafer from the second surface to a first predetermined dimension with respect to the additional semiconductor wafer;
forming an additional semiconductor wafer protective layer to entirely cover the additional semiconductor wafer and a preceding protective layer; and
thinning the additional semiconductor wafer to a second predetermined dimension with respect to the additional semiconductor wafer while maintaining the additional semiconductor wafer protective layer on an edge only of the additional semiconductor wafer and on the preceding protective layer; and
dicing the semiconductor wafer stack with the maintained additional semiconductor wafer protective layer and preceding protective layer into a plurality of three dimensional chip stacks, each of the three dimensional chip stacks beinq devoid of the additional semiconductor wafer protective layer, the preceding protective layer and the first protective layer, wherein when the additional semiconductor wafer is a third semiconductor wafer, the preceding protective layer and the first protective layer are the same layer.
8. The method of claim 7 further comprising repeating the process of bonding an additional semiconductor wafer to, and become part of, the semiconductor wafer stack to add at least one additional semiconductor wafer to the semiconductor wafer stack.
9. The method of claim 7 wherein thinning the second semiconductor wafer to a second predetermined dimension and thinning the additional semiconductor wafer to a second predetermined dimension is by a wet etching process.
10. The method of claim 7 further comprising a first edge trimming process to trim a lateral dimension of the second semiconductor wafer and a second edge trimming process to trim a lateral dimension of the additional semiconductor wafer.
11. The method of claim 7 wherein the protective layer and the additional semiconductor wafer protective layer each comprise a silicon nitride, silicon carbide or silicon carbonitride (NBLOK).
12. The method of claim 7 wherein the protective layer entirely covers the edge of the first semiconductor wafer.
13. Edge protected bonded semiconductor wafers comprising:
a second semiconductor wafer having a first surface and a second surface opposite to the first surface, the first surface of the second semiconductor wafer attached to a first semiconductor wafer by using a bonding layer/interface;
a first protective layer formed to entirely cover an edge of the second semiconductor wafer and an edge of the first semiconductor wafer, the first protective layer being limited to cover only the edges of the first and second semiconductor wafers;
a third semiconductor wafer having a first surface and a second surface opposite to the first surface, the first surface of the third semiconductor wafer attached to the second surface of the second semiconductor wafer by using a bonding layer/interface; and
a second protective layer to entirely cover an edge of the third semiconductor wafer and the first protective layer, the second protective layer being limited to cover only the edge of the third semiconductor wafer and the first protective layer.
14. The edge protected wafers of claim 13 wherein a lateral dimension of the second semiconductor wafer is trimmed prior to attachment to the first semiconductor wafer.
15. The edge protected wafers of claim 14 wherein a lateral dimension of the third semiconductor wafer is trimmed after attachment to the second semiconductor wafer.
16. The method of claim 13 wherein the first protective layer and the second protective layer each comprise a silicon nitride, silicon carbide or silicon carbonitride (NBLOK).
17. The method of claim 13 wherein the first protective layer entirely covers the edge of the first semiconductor wafer.