Methods of forming contacts for semiconductor devices using a local interconnect processing scheme

1. A method of forming a local interconnect structure between first and second active regions that are separated by an isolation region, wherein each of said active regions has at least one transistor device formed therein and thereon, the method comprising:

forming a plurality of source/drain contacts that are each conductively coupled to a source/drain region of one of said at least one transistor device, wherein at least one of said source/drain contacts is a local interconnect structure that spans the isolation region and is conductively coupled to a first source/drain region in said first active region and to a second source/drain region in said second active region;

after forming said plurality of source/drain contacts, forming a patterned mask layer that covers an entirety of said first and second active regions and exposes at least a portion of said local interconnect structure positioned above said isolation region;

performing an etching process through said patterned mask layer to remove a portion of said local interconnect structure, said etching process defining a recess positioned above a remaining portion of said local interconnect structure; and

forming an insulating material in said recess.

2. The method of claim 1 , wherein forming said plurality of source/drain contacts comprises forming a plurality of dual level source/drain contacts comprised of a lower level source/drain contact and an upper level source/drain contact that is conductively coupled to said lower level source/drain contact, wherein said local interconnect structure is comprised of one of said lower level source/drain contacts.

3. The method of claim 1 , further comprising forming a gate contact that is conductively coupled to at least one gate electrode of said at least one transistor device, wherein at least a portion of said gate contact is positioned above said insulating material in said recess that is positioned above said remaining portion of said local interconnect structure.

4. The method of claim 1 , wherein said recess spans the entirety of said isolation region.

5. The method of claim 1 , wherein said etching process is a timed wet etching process.

6. The method of claim 1 , wherein said source/drain contacts are line-type features.

7. The method of claim 1 , wherein said source/drain contacts are comprised of aluminum, tungsten or copper.

8. The method of claim 1 , wherein said patterned mask layer is a patterned hard mask layer.

9. The method of claim 1 , further comprising forming a shared gate electrode structure that is positioned above said first and second active regions and said isolation region, said shared gate electrode serving as a gate electrode for said at least one transistor device above said first and second active regions.

10. A method of forming a local interconnect structure between first and second active regions that are separated by an isolation region, wherein each of said active regions has at least one transistor device formed therein and thereon, the method comprising:

forming a plurality of source/drain contacts that are each conductively coupled to a source/drain region of one of said at least one transistor device, wherein said source/drain contacts are line-type features and wherein at least one of said source/drain contacts is a local interconnect structure that spans the isolation region and is conductively coupled to a first source/drain region in said first active region and to a second source/drain region in said second active region;

after forming said plurality of source/drain contacts, forming a patterned mask layer that covers an entirety of said first and second active regions and exposes at least a portion of said local interconnect structure positioned above said isolation region;

performing an etching process through said patterned mask layer to remove a portion of said local interconnect structure, said etching process defining a recess positioned above a remaining portion of said local interconnect structure;

forming an insulating material in said recess; and

forming a gate contact that is conductively coupled to at least one gate electrode of said at least one transistor device, wherein at least a portion of said gate contact is positioned above said insulating material in said recess that is positioned above said remaining portion of said local interconnect structure.

11. The method of claim 10 , wherein said recess spans the entirety of said isolation region.

12. The method of claim 10 , wherein said etching process is a timed wet etching process.

13. A method of forming a local interconnect structure between first and second active regions that are separated by an isolation region, wherein each of said active regions has at least one transistor device formed therein and thereon, the method comprising:

forming a plurality of source/drain contacts that are each conductively coupled to a source/drain region of one of said at least one transistor device, wherein at least one of said source/drain contacts is a local interconnect structure that spans the isolation region and is conductively coupled to a first source/drain region in said first active region and to a second source/drain region in said second active region;

after forming said plurality of source/drain contacts, forming a patterned hard mask layer that covers an entirety of said first and second active regions and exposes the entirety of said local interconnect structure that is positioned above said isolation region;

performing a timed etching process through said patterned mask layer to remove a portion of said local interconnect structure, said etching process defining a recess positioned above a remaining portion of said local interconnect structure, said recess spanning the entirety of said isolation region;

forming an insulating material in said recess; and

forming a gate contact that is conductively coupled to at least one gate electrode of said at least one transistor device, wherein at least a portion of said gate contact is positioned above said insulating material in said recess that is positioned above said remaining portion of said local interconnect structure.

14. A method of forming a local interconnect structure between first and second active regions that are separated by an isolation region, wherein each of said active regions has at least one transistor device formed therein and thereon, the method comprising:

forming a plurality of shared gate electrode structures that are positioned above said first and second active regions and span said isolation region, each of said shared gate electrode structures serving as a gate electrode structure for a transistor formed in and above said first active region and as a gate electrode structure for a transistor formed in and above said second active region;

forming a plurality of source/drain contacts that are each conductively coupled to a source/drain region of one of said at least one transistor device, wherein at least one of said source/drain contacts is a local interconnect structure that spans the isolation region and is conductively coupled to a first source/drain region in said first active region and to a second source/drain region in said second active region;

after forming said plurality of source/drain contact, forming a patterned hard mask layer that covers an entirety of said first and second active regions and exposes only a portion of said local interconnect structure that is positioned above said isolation region;

performing a timed etching process through said patterned mask layer to remove a portion of said local interconnect structure, said etching process defining a recess positioned above a remaining portion of said local interconnect structure, said recess spanning less than the entirety of said isolation region;

forming an insulating material in said recess; and

forming a gate contact above said isolation region that is conductively coupled to at least one of said shared gate electrode structures, wherein at least a portion of said gate contact is positioned above said insulating material in said recess that is positioned above said remaining portion of said local interconnect structure.