Photonic systems and methods of forming photonic systems
Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.
1. A photonic system, comprising:
a detector material comprising one or more of Ge, SiGe, InP, GaAs and AIN, where the formulas indicate principle components rather than specific stoichiometries; the detector material being part of a detector configured to detect light within an adjacent silicon-containing waveguide; a lower region of the detector material being within an opening and having a higher concentration of defects than an upper region of the detector material above the opening; sidewalls of the opening being lined with a liner; and
wherein the upper region extends laterally outwardly beyond the liner so that some of the upper region is directly over the liner.
2. The photonic system of claim 1 wherein the detector material comprises germanium.
3. The photonic system of claim 1 wherein the liner comprises electrically insulative material.
4. The photonic system of claim 1 wherein the liner comprises electrically conductive material.
5. The photonic system of claim 1 wherein the liner comprises silicon dioxide.
6. The photonic system of claim 1 wherein the liner comprises metal.
7. The photonic system of claim 1 wherein the opening extends into semiconductor material.
8. The photonic system of claim 1 wherein the opening extends into monocrystalline silicon.
9. A photonic system, comprising:
a waveguide consisting of silicon doped to less than or equal to 1×10 17 atoms/cm 3 ;
a germanium-containing detector material adjacent the waveguide; the detector material being part of a detector configured to detect light within the waveguide; a lower region of the germanium-containing detector material being within an opening and having a higher concentration of defects than an upper region of the germanium-containing detector material above the opening; sidewalls of the opening being lined with a liner; and
wherein the upper region extends laterally outwardly beyond the liner so that some of the upper region is directly over the liner.
10. The photonic system of claim 9 wherein the liner comprises electrically insulative material.
11. The photonic system of claim 9 wherein the liner comprises electrically conductive material.
12. The photonic system of claim 9 wherein the liner comprises silicon dioxide.
13. The photonic system of claim 9 wherein the liner comprises metal.
14. A photonic system, comprising:
a waveguide over a monocrystalline silicon base, the waveguide consisting of silicon doped to less than or equal to 1×10 17 atoms/cm 3 ;
an opening extending into the base;
a liner narrowing the opening;
a germanium-containing detector material over the base and extending into the narrowed opening; the detector material being part of a detector configured to detect light within the waveguide; a region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than a region of the germanium-containing detector material outside of the narrowed opening; and
wherein the silicon-containing waveguide is comprised by a line spaced from the monocrystalline silicon base by one or more materials.
15. The photonic system of claim 14 wherein the germanium-containing detector material is taller than the silicon-containing waveguide.
16. The photonic system of claim 14 wherein the germanium-containing detector material is not taller than the silicon-containing waveguide.