Thin semiconductor-on-insulator MOSFET with co-integrated silicon, silicon germanium and silicon doped with carbon channels
A method of fabricating a semiconductor device that may begin with providing a semiconductor substrate including a first device region including a silicon layer in direct contact with a buried dielectric layer, a second device region including a silicon germanium layer in direct contact with the buried dielectric layer, and a third device region with a silicon doped with carbon layer. At least one low power semiconductor device may then be formed on the silicon layer within the first device region of the semiconductor substrate. At least one p-type semiconductor device may be formed on the silicon germanium layer of the second device region of the semiconductor substrate. At least one n-type semiconductor device may be formed on the silicon doped with carbon layer of the third device region of the semiconductor substrate.
1. A semiconductor device comprising:
a substrate including a first device region including a silicon layer in direct contact with a buried dielectric layer, a second device region including a silicon germanium layer in direct contact with the buried dielectric layer, and a third device region with a silicon-doped-with-carbon layer;
at least one low power semiconductor device including a first n-type semiconductor device and a first p-type semiconductor device on the silicon layer within the first device region of the substrate;
a second p-type semiconductor device on the silicon germanium layer of the second device region of the substrate, wherein the second p-type semiconductor device has a threshold voltage that is 0.05 V to 0.5 V less than a threshold voltage of the first p-type semiconductor device of the at least one low power semiconductor device; and
a second n-type semiconductor device on the silicon-doped-with-carbon layer of the third device region of the substrate, wherein the second n-type semiconductor device has a threshold voltage that is 0.05 V to 0.3 V less than a threshold voltage of the first n-type semiconductor device of the at least one low power semiconductor device.
2. The semiconductor device of claim 1 , wherein an off current for at least one of the first n-type semiconductors device and the first p-type semiconductor device of the least one low current semiconductor device is less than 10 nA/μm, and an off current for at least one of the second n-type semiconductor device and the second p-type semiconductor device is greater than 10 nA/μm.
3. The semiconductor device of claim 1 , wherein the silicon layer is comprised of base material of 100% silicon, the silicon germanium layer comprises a germanium content ranging from 5 wt. % to 60 wt. %, and the silicon-doped-with-carbon layer comprises a carbon content ranging from 0.2 wt. % to 2 wt. %.
4. The semiconductor device of claim 1 , wherein the at least one low power semiconductor device comprises a complementary metal oxide semiconductor device.
5. The semiconductor device of claim 1 , where in the threshold voltage for at least one of the first n-type semiconductor and the first p-type semiconductor device is greater the 0.3 V; and the threshold voltage of the second n-type semiconductor device ranges from 0.1 V to 0.3 V, and the threshold voltage of the second p-type semiconductor device ranges from 0.1 V to 0.3 V.