Package configurations for low EMI circuits
An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.
1. An electronic component, comprising:
a first transistor comprising a first source and a first drain,
a second transistor comprising a second source and a second drain, and
a single package comprising a conductive structural portion, the single package encasing both the first transistor and the second transistor, wherein
the first source is electrically connected to the conductive structural portion of the single package,
the first drain is electrically connected to the second source, and
the first transistor or the second transistor is directly mounted to the conductive structural portion of the single package.
2. The electronic component of claim 1 , wherein the first transistor and the second transistor are on a common substrate.
3. The electronic component of claim 2 , wherein the substrate is an insulating or semi-insulating substrate.
4. The electronic component of claim 2 , wherein the first drain and the second source are formed of a single electrode.
5. The electronic component of claim 1 , further comprising a capacitor.
6. The electronic component of claim 5 , wherein the single package encases the capacitor.
7. The electronic component of claim 6 , wherein the second drain is electrically connected to a first terminal of the capacitor and a second terminal of the capacitor is electrically connected to the conductive structural portion of the single package.
8. The electronic component of claim 1 , wherein the first transistor or the second transistor is a high voltage switching transistor.
9. The electronic component of claim 1 , wherein the first transistor or the second transistor is a III-N transistor.
10. The electronic component of claim 1 , wherein the first transistor or the second transistor is a lateral device.
11. The electronic component of claim 1 , wherein the package comprises a first source lead, a first gate lead, a first drain lead, a second gate lead, and a second drain lead.
12. The electronic component of claim 11 , wherein the first transistor further comprises a first gate, the second transistor further comprises a second gate, the conductive structural portion of the single package is electrically connected to the first source lead, the first gate is electrically connected to the first gate lead, the second gate is electrically connected to the second gate lead, the second drain is electrically connected to the second drain lead, and the first drain and the second source are both electrically connected to the first drain lead.
13. The electronic component of claim 1 , wherein the single package comprises a source lead, a gate lead, and a drain lead.
14. The electronic component of claim 13 , wherein the source lead, the gate lead, and the drain lead all extend from a first side of the single package.
15. The electronic component of claim 13 , wherein the drain lead is between the gate lead and the source lead.
16. The electronic component of claim 13 , wherein the source lead is between the gate lead and the drain lead.
17. The electronic component of claim 1 , wherein the first transistor or the second transistor comprises a semiconductor layer having a first side.
18. The electronic component of claim 17 , wherein the first source and the first drain are on the first side of the semiconductor layer.
19. The electronic component of claim 18 , wherein the second source and the second drain are on the first side of the semiconductor layer.
20. The electronic component of claim 1 , wherein the first transistor or the second transistor is an enhancement mode transistor.
21. A method of forming an electronic component, the method comprising:
providing a first transistor comprising a first source and a first drain;
providing a second transistor comprising a second source and a second drain;
encasing both the first transistor and the second transistor in a single package, the single package comprising a conductive structural portion;
electrically connecting the first source to the conductive structural portion of the single package; and
electrically connecting the first drain to the second source; wherein
the first transistor or the second transistor is directly mounted to the conductive structural portion of the single package.
22. The method of claim 21 , wherein the first transistor and the second transistor are provided on a common substrate.
23. The method of claim 21 , wherein the first transistor or the second transistor is a III-N transistor.
24. The method of claim 21 , wherein the first transistor or the second transistor is a lateral device.
25. The method of claim 21 , further comprising electrically connecting the conductive structural portion of the single package to a DC ground.
26. A method of forming an electronic component, the method comprising:
providing a first transistor comprising a first source, a first drain, and a semiconductor layer, the first source and first drain being formed on a first side of the semiconductor layer;
providing a second transistor comprising a second source and a second drain;
encasing both the first transistor and the second transistor in a single package, the single package comprising a conductive structural portion;
electrically connecting the first drain to the second source; and
electrically connecting the first source to the conductive structural portion of the single package.
27. The method of claim 26 , further comprising electrically connecting the conductive structural portion of the single package to a DC ground.
28. The method of claim 26 , wherein the first transistor and the second transistor are provided on a common substrate.
29. The method of claim 28 , wherein the common substrate is an insulating or semi-insulating substrate.
30. The method of claim 26 , wherein the first transistor or the second transistor is a III-N transistor.
31. A method of forming an electronic component, the method comprising:
providing a first transistor comprising a first source and a first drain;
providing a second transistor comprising a second source and a second drain;
encasing both the first transistor and the second transistor in a single package, the single package comprising a conductive structural portion;
electrically connecting the first source to the conductive structural portion of the single package; and
electrically connecting the first drain to the second source; wherein
the first transistor or the second transistor is a lateral device.
32. The method of claim 31 , further comprising electrically connecting the conductive structural portion of the single package to a DC ground.
33. The method of claim 31 , wherein the first transistor and the second transistor are provided on a common substrate.
34. The method of claim 33 , wherein the common substrate is an insulating or semi-insulating substrate.
35. The method of claim 31 , wherein the first transistor or the second transistor is a III-N transistor.
36. A method of forming an electronic component, the method comprising:
providing a first transistor comprising a first source and a first drain;
providing a second transistor comprising a second source and a second drain;
encasing both the first transistor and the second transistor in a single package, the single package comprising a conductive structural portion;
electrically connecting the first source to the conductive structural portion of the single package; and
electrically connecting the first drain to the second source; wherein
the first transistor or the second transistor is a III-N transistor.
37. The method of claim 36 , further comprising electrically connecting the conductive structural portion of the single package to a DC ground.
38. The method of claim 36 , wherein the first transistor and the second transistor are provided on a common substrate.
39. The method of claim 38 , wherein the common substrate is an insulating or semi-insulating substrate.