Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems

1. A method of forming a ruthenium material on a substrate, comprising:

forming a seed material comprising ruthenium silicide on a dielectric material by atomic layer deposition or chemical vapor deposition;

forming a ruthenium silicide material on the seed material; and

forming a ruthenium material on the ruthenium silicide material to have an exposed surface of the ruthenium material substantially free of silicon.

2. The method of claim 1 , wherein forming a ruthenium silicide material on the seed material comprises exposing the seed material to a gaseous mixture of a silicon precursor gas and a ruthenium precursor gas.

3. The method of claim 1 , wherein forming a ruthenium silicide material on the seed material comprises exposing the seed material to a silicon precursor gas selected from the group consisting of at least one of silane, disilane, trisilane, dichlorosilane, trichlorosilane, hexachlorodisilane, and a methylated silane.

4. The method of claim 1 , wherein forming a ruthenium material on the ruthenium silicide material comprises forming the ruthenium material comprising a decreasing concentration of silicon between a surface of the ruthenium material adjacent the ruthenium silicide material to the exposed surface of the ruthenium material.

5. The method of claim 1 , wherein forming a ruthenium material comprises forming a ruthenium material having the exposed surface with a silicon content of between 0 atomic percent and 0.01 atomic percent.

6. The method of claim 1 , wherein forming a ruthenium material comprises exposing the ruthenium silicide material to a hydrogen source gas and a ruthenium precursor gas.

7. The method of claim 6 , wherein exposing the ruthenium silicide material to a hydrogen source gas comprises exposing the ruthenium silicide material to a hydrogen source gas selected from the group consisting of hydrogen and ammonia.

8. The method of claim 1 , further comprising forming another ruthenium material over the ruthenium material and exhibiting a greater porosity than a porosity of the ruthenium material.

9. A method of forming a ruthenium material on a substrate, comprising:

forming a ruthenium silicide material on a substrate; and

forming a hydrogen-treated ruthenium material on the ruthenium silicide material to form an electrode having an exposed surface substantially free of silicon and comprising a decreasing concentration of silicon between the ruthenium silicide material and the exposed surface.

10. The method of claim 9 , wherein forming an electrode comprises forming the electrode comprising a gradient of ruthenium concentration increasing from the ruthenium silicide material to the exposed surface of the hydrogen-treated ruthenium material.

11. A method of forming a capacitor, comprising:

forming an adhesion material comprising silicon and ruthenium on a substrate;

forming a hydrogen-treated ruthenium material comprising a decreasing concentration of silicon from an interface between the adhesion material and the hydrogen-treated ruthenium material to an exposed surface of the hydrogen-treated ruthenium material, the exposed surface substantially free of silicon;

forming another ruthenium material on the hydrogen-treated ruthenium material;

forming a dielectric material on the another ruthenium material; and

forming a conductive material on the dielectric material.

12. The method of claim 11 , wherein forming a hydrogen-treated ruthenium material comprises exposing the adhesion material to a ruthenium precursor gas and a hydrogen source gas.

13. The method of claim 11 , wherein forming an adhesion material comprising silicon and ruthenium comprises forming an adhesion material overlying and at least partially in contact with a conductive plug material.

14. The method of claim 11 , wherein forming an adhesion material comprising silicon and ruthenium and forming a hydrogen-treated ruthenium material comprises forming an electrode of the capacitor.

15. The method of claim 14 , wherein forming an electrode of the capacitor comprises forming a ruthenium-containing electrode comprising a gradient of silicon, the silicon concentration decreasing from an unexposed surface of the electrode to an exposed surface of the electrode.

16. The method of claim 11 , wherein forming a hydrogen-treated ruthenium material comprises exposing the adhesion material to a ruthenium precursor gas and hydrogen gas.

17. The method of claim 11 , wherein forming another ruthenium material comprises terminating a flow of a hydrogen source gas and exposing the hydrogen-treated ruthenium material to a ruthenium precursor gas.

18. An electronic system, comprising:

a processor; and

an integrated circuit in communication with the processor, the integrated circuit comprising a ruthenium material overlying and in contact with a material comprising silicon and ruthenium, the ruthenium material having a surface with a silicon content of between 0 atomic percent and 0.01 atomic percent.

19. The electronic system of claim 18 , wherein the integrated circuit is a memory circuit.