IP Library Granted Patent US 8,932,932
Granted Patent B2
US 8,932,932 · App. 13/803,281 · Granted Jan 13, 2015

Highly scalable trench capacitor

Inventors: Kangguo Cheng (Guilderland, NY); Johnathan E. Faltermeier (Delanson, NY); Anne Marie Kimball (Niskayuna, NY)
Assignee: International Business Machines Corporation
H01L28/40H01L27/10861H01L29/66181H01L21/7682H01L21/76831
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Quick Facts
Patent No.
US 8,932,932
App. No.
13/803,281
Granted
Jan 13, 2015
Kind
B2
Abstract

An improved trench structure, and method for its fabrication are disclosed. Embodiments of the present invention provide a trench in which the collar portion has an air gap instead of a solid oxide collar. The air gap provides a lower dielectric constant. Embodiments of the present invention can therefore be used to make higher-performance devices (due to reduced parasitic leakage), or smaller devices, due to the ability to use a thinner collar to achieve the same performance as a thicker collar comprised only of oxide (with no air gap). Alternatively, a design choice can be made to achieve a combination of improved performance and reduced size, depending on the application.

Claims (15)

1. A method for fabricating a trench structure comprising the steps of:

forming spacers on trench sidewalls on a trench within a substrate;

depositing a trench conductor within the trench, whereby the trench conductor is disposed between the spacers;

removing a portion of the spacers; and

depositing a non-conformal material, thereby forming a collar, said collar comprising an inner wall and an outer wall, and wherein said collar comprises a cavity, said cavity disposed between the inner wall and outer wall of said collar; and

removing a portion of the non-conformal material.

2. The method of claim 1 , further comprising the step of:

forming an oxide liner on the trench conductor, and the outer wall of said collar.

3. The method of claim 1 , wherein the step of forming spacers on trench sidewalls comprises the steps of:

depositing an oxide within the trench; and

performing a first etch of the oxide.

4. The method of claim 1 , wherein the step of depositing a non-conformal material is performed via chemical vapor deposition.

5. The method of claim 1 , further comprising the step of performing a thermal anneal at a temperature ranging from about 850 degrees Centigrade to about 1000 degrees Centigrade for a duration ranging from about 10 minutes to about 1 hour.

6. The method of claim 5 , wherein the step of performing a thermal anneal is performed after the step of removing a portion of the non-conformal material.

7. The method of claim 5 , wherein the step of performing a thermal anneal is performed before the step of removing a portion of the non-conformal material.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 12, 2021
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 056987/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES INC.
Reel/Frame 054636/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2020
From: GLOBALFOUNDRIES INC.
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 054633/0001 →
SECURITY AGREEMENT Recorded Nov 29, 2018
From: GLOBALFOUNDRIES INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 049490/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2015
From: GLOBALFOUNDRIES U.S. 2 LLC; GLOBALFOUNDRIES U.S. INC.
To: GLOBALFOUNDRIES INC.
Reel/Frame 036779/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2015
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: GLOBALFOUNDRIES U.S. 2 LLC
Reel/Frame 036550/0001 →
Continuity (2)
Division 12689501 · Jan 19, 2010
Related Publication 20130203234A1 · Aug 8, 2013