Micro-electromechanical semiconductor comprising stress measuring element and stiffening braces separating wall depressions
The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.
1. A micro-electromechanical semiconductor component, comprising:
a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top wall and a bottom wall,
wherein for forming a flexible connection to a region of the semiconductor substrate, the top wall or the bottom wall being provided with trenches along lateral walls of the cavity, at least one bending web being formed between the trenches, and
at least one measuring element that is sensitive to mechanical stresses is formed within at least one of the at least one bending web,
wherein within a central region surrounded by the trenches, the top wall or the bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.
2. The micro-electromechanical semiconductor component according to claim 1 , wherein the plurality of depressions are opened towards the top side of the top wall or the underside of the bottom wall.
3. The micro-electromechanical semiconductor component according to claim 1 , wherein a plurality of stiffening braces separating the depressions are configured to simultaneously providing stiffness while the plurality of depressions reduce the mass of the central region.
4. A micro-electromechanical semiconductor component, comprising:
a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall,
wherein for forming a flexible connection to a region of the semiconductor substrate, the top wall being provided with trenches above an inside of the cavity or the bottom wall being provided with trenches below the inside of the cavity, at least one bending web being formed between the trenches, and
at least one measuring element that is sensitive to mechanical stresses is formed within at least one of the at least one bending web,
wherein within a central region surrounded by the trenches, the top wall or the bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.
5. The micro-electromechanical semiconductor component according to claim 4 , wherein the depressions and the stiffening braces each are arranged, and respectively extend, along lines oriented particularly orthogonally relative to each other.
6. A pressure or acceleration sensor comprising a micro-electromechanical semiconductor component according to claim 1 .
7. The micro-electromechanical semiconductor component according to claim 1 , wherein the plurality of depressions are opened towards the top side of the top wall or the underside of the bottom wall.
8. The micro-electromechanical semiconductor component according to claim 1 , wherein a plurality of stiffening braces separating the depressions are configured to simultaneously providing stiffness while the plurality of depressions reduce the mass of the central region.
9. The micro-electromechanical semiconductor component according to claim 4 , wherein the at least one measuring element sensitive to mechanical stresses comprises at least one of a resistor, a transistor, and a piezoresistive component.
10. The micro-electromechanical semiconductor component according to claim 9 , wherein a plurality of measuring elements sensitive to mechanical stresses are connected to form a measurement bridge.