Multi-plasma nitridation process for a gate dielectric
A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process. The first silicon oxide material is converted into a first silicon oxynitride material by a first plasma nitridation process. A second silicon oxide material is subsequently deposited by a second atomic layer deposition process. The second silicon oxide material is converted into a second silicon oxynitride material by a second plasma nitridation process. Multiple repetitions of the atomic layer deposition process and the plasma nitridation process provides a silicon oxynitride material having a ratio of nitrogen atoms to oxygen atoms greater than 1/3, which can be advantageously employed to reduce the leakage current through a gate dielectric.
1. A method of forming a semiconductor structure comprising:
providing a semiconductor substrate including a first top semiconductor portion and a second top semiconductor portion, wherein said first top semiconductor portion and said second top semiconductor portion are separated by a trench isolation structure;
simultaneously converting an upper portion of said first top semiconductor portion into a first semiconductor oxynitride portion and an upper portion of said second top semiconductor portion into a second semiconductor oxynitride portion by performing an oxynitration anneal, wherein said first semiconductor oxynitride portion and said second semiconductor oxynitride portion have a topmost surface that is coplanar with a topmost surface of said trench isolation structure, and wherein said first semiconductor oxynitride portion and said second semiconductor oxynitride portion contain from 2 atomic % to 10 atomic % nitrogen;
depositing a first silicon oxide material over said first and second semiconductor oxynitride portions by a first atomic layer deposition process;
converting said first silicon oxide material into a first silicon oxynitride material employing at least a first plasma nitridation process;
depositing a second silicon oxide material on said first silicon oxynitride material by a second atomic layer deposition process; and
converting said second silicon oxide material into a second silicon oxynitride material by a second plasma nitridation process, wherein a ratio of nitrogen atoms to oxygen atoms in a stack of said first and second silicon oxynitride materials is greater than 1/3.
2. The method of claim 1 , wherein said first atomic layer deposition process employs at least 10 deposition cycles, wherein each deposition cycle comprising:
a silicon-containing precursor exposure phase in which a process chamber containing said semiconductor substrate includes a silicon-containing precursor gas; and
an oxygen exposure phase in which said process chamber includes an oxygen-containing gas.
3. The method of claim 2 , wherein said first atomic layer deposition process employs a number of deposition cycles, said number selected from a range from 12 to 20.
4. The method of claim 2 , wherein said second atomic layer deposition process employs at least 4 deposition cycles.
5. The method of claim 2 , wherein said process chamber is void of any oxygen-containing gas during said silicon-containing precursor phase, and is void of any silicon-containing gas during said oxygen exposure phase.
6. The method of claim 2 , wherein a molecule of said silicon-containing precursor gas comprises at least one silicon atom and at least one hydrogen atom.
7. The method of claim 2 , wherein said oxygen-containing gas is selected from O 2 , O 3 , and a combination of O 2 and O 3 .
8. The method of claim 1 , wherein said first and second plasma nitridation processes employ a plasma of a nitrogen-containing gas.
9. The method of claim 8 , wherein said nitrogen-containing gas is selected from N 2 , NH 3 , NO, N 2 O, NO 2 , and combinations thereof.
10. The method of claim 1 , wherein said ratio of nitrogen atoms to oxygen atoms is in a range from 1/3 to 0.70.
11. The method of claim 10 , wherein said stack of said first and second silicon oxynitride materials has an overall composition of SiO x N y , wherein x/2+3y/4 is in a range from 0.75 to 1.25.
12. The method of claim 1 , further comprising annealing said semiconductor substrate with said first silicon oxynitride material in an environment including a nitrogen-containing gas or an oxygen-containing gas at an elevated temperature in a range from 700 degrees Celsius to 1,100 degrees Celsius prior to said depositing of said second silicon oxide material.
13. The method of claim 1 , wherein said converting is performed in an environment including an oxygen-containing gas or a nitrogen-containing gas at an elevated temperature in a range from 700 degrees Celsius to 1,100 degrees Celsius.
14. The method of claim 13 , wherein said first and second semiconductor portions are each a silicon-containing material portion selected from a silicon portion and a silicon-germanium alloy portion.
15. The method of claim 1 , further comprising performing at least once a series of processing steps after said converting of said second silicon oxide material, said series of processing steps comprising:
depositing an additional silicon oxide material on an underlying surface of a silicon oxynitride material by an additional atomic layer deposition process; and
converting said additional silicon oxide material into an additional silicon oxynitride material by an additional plasma nitridation process.
16. A method of forming a semiconductor structure comprising:
providing a semiconductor substrate including a silicon portion and a silicon-germanium alloy portion having germanium at an atomic concentration greater than 20%;
simultaneously converting a surface region of said silicon portion into a silicon oxynitride layer and a surface region of said silicon-germanium alloy portion into a silicon-germanium oxynitride layer,
depositing a first silicon oxide material on said silicon oxynitride layer and said silicon-germanium oxynitride layer by a first atomic layer deposition process;
converting said first silicon oxide material into a first silicon oxynitride material employing at least a first plasma nitridation process;
depositing a second silicon oxide material on said first silicon oxynitride material by a second atomic layer deposition process;
converting said second silicon oxide material into a second silicon oxynitride material by a second plasma nitridation process, wherein a ratio of nitrogen atoms to oxygen atoms in a stack of said first and second silicon oxynitride materials is greater than 1/3;
patterning a first stack of said silicon oxynitride layer, a first portion of said first silicon oxynitride material, and a first portion of said second silicon oxynitride material into a first gate dielectric; and
patterning a second stack of said silicon-germanium oxynitride layer, a second portion of said first silicon oxynitride material, and a second portion of said second silicon oxynitride material into a second gate dielectric, wherein a thickness differential between said second gate dielectric and said first gate dielectric is not greater than 0.3 nm.
17. The method of claim 16 , wherein said simultaneously conversion of said surface region of said silicon portion and said surface region of said silicon-germanium alloy portion is performed by a thermal oxynitridation process employing an oxygen-and-nitrogen-containing gas or a combination of an oxygen-containing gas and a nitrogen-containing gas.